J. Elsner

5.4k total citations · 1 hit paper
22 papers, 4.5k citations indexed

About

J. Elsner is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Elsner has authored 22 papers receiving a total of 4.5k indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 11 papers in Materials Chemistry and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Elsner's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (10 papers) and ZnO doping and properties (8 papers). J. Elsner is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (10 papers) and ZnO doping and properties (8 papers). J. Elsner collaborates with scholars based in Germany, United Kingdom and Sweden. J. Elsner's co-authors include Thomas Frauenheim, M. Haugk, D. Porezag, Marcus Elstner, G. Jungnickel, Gotthard Seifert, Sándor Suhai, R. Jones, M. I. Heggie and P. R. Briddon and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. Elsner

22 papers receiving 4.5k citations

Hit Papers

Self-consistent-charge density-functional tight-binding m... 1998 2026 2007 2016 1998 1000 2.0k 3.0k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties
    1998 3.3k citations Marcus Elstner, D. Porezag et al. Physical review. B, Condensed matter profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Elsner Germany 15 2.3k 1.6k 1.3k 907 590 22 4.5k
M. Haugk Germany 15 2.0k 0.9× 1.5k 1.0× 1.2k 0.9× 527 0.6× 591 1.0× 27 4.1k
Vladimir M. Kaganer Germany 29 1.6k 0.7× 2.0k 1.3× 948 0.7× 1.1k 1.2× 934 1.6× 129 4.2k
P. Ballone Italy 35 1.6k 0.7× 1.6k 1.0× 571 0.4× 429 0.5× 638 1.1× 148 4.4k
G. Jungnickel Germany 25 3.6k 1.6× 1.9k 1.2× 1.5k 1.1× 221 0.2× 639 1.1× 50 5.8k
V. N. Novikov Russia 46 4.5k 2.0× 1.2k 0.8× 430 0.3× 698 0.8× 351 0.6× 175 6.3k
B. Frick France 45 5.4k 2.4× 1.4k 0.9× 510 0.4× 1.4k 1.5× 346 0.6× 297 7.7k
E. Goovaerts Belgium 32 2.3k 1.0× 1.7k 1.1× 1.8k 1.4× 321 0.4× 147 0.2× 197 4.9k
Fernando A. Escobedo United States 43 3.0k 1.3× 888 0.6× 506 0.4× 772 0.9× 644 1.1× 183 5.5k
D. Porezag Germany 32 6.1k 2.6× 3.5k 2.2× 2.3k 1.8× 410 0.5× 801 1.4× 52 9.5k
Talat S. Rahman United States 50 4.8k 2.1× 3.9k 2.5× 2.1k 1.7× 834 0.9× 245 0.4× 314 8.6k

Countries citing papers authored by J. Elsner

Since Specialization
Citations

This map shows the geographic impact of J. Elsner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Elsner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Elsner more than expected).

Fields of papers citing papers by J. Elsner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Elsner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Elsner. The network helps show where J. Elsner may publish in the future.

Co-authorship network of co-authors of J. Elsner

This figure shows the co-authorship network connecting the top 25 collaborators of J. Elsner. A scholar is included among the top collaborators of J. Elsner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Elsner. J. Elsner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Blumenau, A. T., C. J. Fall, J. Elsner, et al.. (2003). A theoretical investigation of dislocations in cubic and hexagonal gallium nitride. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1684–1709. 32 indexed citations
2.
Elsner, J., A. T. Blumenau, Thomas Frauenheim, R. Jones, & M. I. Heggie. (2000). Structural and Electronic Properties of Line Defects in GaN. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 481–492. 4 indexed citations
3.
Haugk, M., J. Elsner, Thomas Frauenheim, et al.. (2000). Structures, Energetics and Electronic Properties of Complex III—V Semiconductor Systems. physica status solidi (b). 217(1). 473–511. 31 indexed citations
4.
Haugk, M., J. Elsner, Thomas Heine, Thomas Frauenheim, & Gotthard Seifert. (1999). A parallel code for a self-consistent charge density functional based tight binding method: Total energy calculations for extended systems. Computational Materials Science. 13(4). 239–251. 9 indexed citations
5.
Jones, R., J. Elsner, M. Haugk, et al.. (1999). Interaction of Oxygen with Threading Dislocations in GaN. physica status solidi (a). 171(1). 167–173. 36 indexed citations
6.
Gutiérrez, Rafael, M. Haugk, J. Elsner, et al.. (1999). Reconstructions of the Si-terminated (100) surface inβ−SiC: A theoretical study. Physical review. B, Condensed matter. 60(3). 1771–1776. 17 indexed citations
7.
Elsner, J., Thomas Frauenheim, M. Haugk, et al.. (1999). Extended Defects in GaN: a Theoretical Study. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 250–256. 3 indexed citations
8.
Rauls, E., J. Elsner, Rafael Gutiérrez, & Thomas Frauenheim. (1999). Stoichiometric and non-stoichiometric (1010) and (1120) surfaces in 2H–SiC: a theoretical study. Solid State Communications. 111(8). 459–464. 61 indexed citations
9.
Lee, Seung Mi, Young Hee Lee, Yong Gyoo Hwang, et al.. (1999). Stability and electronic structure of GaN nanotubes from density-functional calculations. Physical review. B, Condensed matter. 60(11). 7788–7791. 218 indexed citations
10.
Elstner, Marcus, D. Porezag, G. Jungnickel, et al.. (1998). Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties. Physical review. B, Condensed matter. 58(11). 7260–7268. 3335 indexed citations breakdown →
11.
Elsner, J., M. Haugk, G. Jungnickel, & Thomas Frauenheim. (1998). Theory of Ga, N and H terminated GaN surfaces. Solid State Communications. 106(11). 739–743. 42 indexed citations
12.
Elsner, J., R. Jones, M. I. Heggie, et al.. (1998). Deep acceptors trapped at threading-edge dislocations in GaN. Physical review. B, Condensed matter. 58(19). 12571–12574. 259 indexed citations
13.
Haugk, M., J. Elsner, Michael Sternberg, & Thomas Frauenheim. (1998). Structural models for the reconstruction of the surface and their relative stabilities. Journal of Physics Condensed Matter. 10(21). 4523–4532. 7 indexed citations
14.
Elsner, J., Maria Kaukonen, M. I. Heggie, et al.. (1998). Domain boundaries on {112¯0} planes in GaN: A theoretical study. Physical review. B, Condensed matter. 58(23). 15347–15350. 9 indexed citations
15.
Elsner, J., Rafael Gutiérrez, B. Hourahine, et al.. (1998). A theoretical study of O chemisorption on GaN (0001)/(0001) surfaces. Solid State Communications. 108(12). 953–958. 20 indexed citations
16.
Elsner, J., R. Jones, M. Haugk, et al.. (1998). Effect of oxygen on the growth of (1010) GaN surfaces: The formation of nanopipes. Applied Physics Letters. 73(24). 3530–3532. 62 indexed citations
17.
Elsner, J., R. Jones, Peter Sitch, et al.. (1997). Theory of Threading Edge and Screw Dislocations in GaN. Physical Review Letters. 79(19). 3672–3675. 288 indexed citations
18.
Frauenheim, Thomas, D. Porezag, Marcus Elstner, et al.. (1997). An ab initio two-center tight-binding approach to simulations of complex materials properties. MRS Proceedings. 491. 14 indexed citations
19.
Haugk, M., J. Elsner, & Thomas Frauenheim. (1997). A density-functional based tight-binding approach to GaAs surface reconstructions. Journal of Physics Condensed Matter. 9(35). 7305–7315. 20 indexed citations
20.
Elsner, J., M. Haugk, & Thomas Frauenheim. (1996). Reconstruction of Nonpolar Gan Surfaces. MRS Proceedings. 423. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by M. Haugk Breakdown of academic impact, for papers by Vladimir M. Kaganer Breakdown of academic impact, for papers by P. Ballone Breakdown of academic impact, for papers by G. Jungnickel Breakdown of academic impact, for papers by V. N. Novikov Breakdown of academic impact, for papers by B. Frick Breakdown of academic impact, for papers by E. Goovaerts Breakdown of academic impact, for papers by Fernando A. Escobedo Breakdown of academic impact, for papers by D. Porezag Breakdown of academic impact, for papers by Talat S. Rahman
Rankless by CCL
2026