J. Comas

1.9k total citations
76 papers, 1.6k citations indexed

About

J. Comas is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, J. Comas has authored 76 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 42 papers in Atomic and Molecular Physics, and Optics and 29 papers in Computational Mechanics. Recurrent topics in J. Comas's work include Ion-surface interactions and analysis (29 papers), Semiconductor Quantum Structures and Devices (28 papers) and Semiconductor materials and devices (27 papers). J. Comas is often cited by papers focused on Ion-surface interactions and analysis (29 papers), Semiconductor Quantum Structures and Devices (28 papers) and Semiconductor materials and devices (27 papers). J. Comas collaborates with scholars based in United States, United Kingdom and China. J. Comas's co-authors include B. V. Shanabrook, G. DeSalvo, W. T. Beard, C. Burleigh Cooper, N. Bottka, O. J. Glembocki, R. Merlín, B. D. McCombe, J.D. Ralston and G. W. Wicks and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Physical review. B, Condensed matter.

In The Last Decade

J. Comas

72 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Comas United States 20 1.0k 1.0k 383 287 131 76 1.6k
W. Schmid Germany 20 882 0.9× 1.3k 1.3× 493 1.3× 140 0.5× 102 0.8× 66 1.6k
R. Butz Germany 17 803 0.8× 657 0.6× 447 1.2× 196 0.7× 84 0.6× 46 1.3k
B. Pajot France 23 767 0.8× 1.0k 1.0× 563 1.5× 159 0.6× 77 0.6× 93 1.4k
D. W. Kisker United States 24 920 0.9× 927 0.9× 360 0.9× 95 0.3× 260 2.0× 58 1.3k
D.R. Wight United Kingdom 21 758 0.7× 1.0k 1.0× 543 1.4× 81 0.3× 119 0.9× 58 1.5k
Shun‐ichi Gonda Japan 22 740 0.7× 818 0.8× 603 1.6× 180 0.6× 197 1.5× 84 1.3k
J. W. Petersen Denmark 20 629 0.6× 661 0.7× 271 0.7× 218 0.8× 141 1.1× 69 1.2k
R. Sielemann Germany 17 545 0.5× 516 0.5× 453 1.2× 174 0.6× 231 1.8× 101 1.2k
M.R. Brozel United Kingdom 16 638 0.6× 750 0.7× 283 0.7× 75 0.3× 94 0.7× 63 1.0k
G. M. Martin France 19 1.5k 1.5× 1.9k 1.8× 375 1.0× 92 0.3× 314 2.4× 34 2.3k

Countries citing papers authored by J. Comas

Since Specialization
Citations

This map shows the geographic impact of J. Comas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Comas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Comas more than expected).

Fields of papers citing papers by J. Comas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Comas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Comas. The network helps show where J. Comas may publish in the future.

Co-authorship network of co-authors of J. Comas

This figure shows the co-authorship network connecting the top 25 collaborators of J. Comas. A scholar is included among the top collaborators of J. Comas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Comas. J. Comas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Steiner, Bruce, et al.. (1993). Defects in III–V materials and the accommodation of strain in layered semiconductors. Journal of Electronic Materials. 22(7). 725–738.
2.
Myers, David R., G.A. Vawter, E. D. Jones, et al.. (1992). Rapid-thermal annealing for quantum-well heterostructure device fabrication. IEEE Transactions on Electron Devices. 39(1). 41–49. 7 indexed citations
3.
Qadri, S. B., et al.. (1991). Periodicities in the X-Ray Diffraction of Low Order ALAS/GAAS Superlattices. MRS Proceedings. 230.
4.
Pellegrino, John, S. B. Qadri, W. F. Tseng, & J. Comas. (1991). Periodicities associated with low-order AlAs/GaAs superlattices. Thin Solid Films. 206(1-2). 40–46.
5.
Merlín, R., et al.. (1988). Observation of coupled quasi-two-dimensional electronic excitations in tilted magnetic fields. Surface Science. 196(1-3). 626–631. 2 indexed citations
6.
Wrobel, J. M., et al.. (1987). Variations of energies and line shapes of the electroreflectance spectra of epitaxial AlxGa1−xAs. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 5(4). 1464–1469. 11 indexed citations
7.
Kirchoefer, S. W., H. S. Newman, & J. Comas. (1985). Asymmetric quantum well electron barrier diode. Applied Physics Letters. 46(9). 855–857. 9 indexed citations
8.
Glembocki, O. J., B. V. Shanabrook, N. Bottka, W. T. Beard, & J. Comas. (1985). Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions. Applied Physics Letters. 46(10). 970–972. 180 indexed citations
9.
Shanabrook, B. V., J. Comas, Thomas A. Perry, & R. Merlín. (1984). Raman scattering from electrons bound to shallow donors inGaAs−AlxGa1−xAsquantum-well structures. Physical review. B, Condensed matter. 29(12). 7096–7098. 72 indexed citations
10.
Griffin, James A., et al.. (1984). Formation of planar n+pockets in GaAs for mixer diode fabrication. IEEE Transactions on Electron Devices. 31(8). 1096–1099. 4 indexed citations
11.
Sundaram, Suresh, et al.. (1983). Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering. Journal of Applied Physics. 54(4). 1808–1815. 79 indexed citations
12.
Wilson, R. G. & J. Comas. (1982). Atom and carrier depth distributions of beryllium implanted into silicon. Journal of Applied Physics. 53(4). 3003–3009. 3 indexed citations
13.
Devlin, William J., et al.. (1979). p-n junction formation in n-InP by Be ion implantation. 7 indexed citations
14.
Hubler, G. K., et al.. (1978). Profiles of ion-implanted Be in GaAs by means of (p, α) nuclear reaction and SIMS methods. Nuclear Instruments and Methods. 149(1-3). 635–638. 7 indexed citations
15.
Anderson, Gordon Wood, et al.. (1978). Composition, Chemical Bonding, and Contamination of Low Temperature SiO x  N  y Insulating Films. Journal of The Electrochemical Society. 125(3). 424–430. 22 indexed citations
16.
Bishop, S. G., J. Comas, Senthilarasu Sundaram, & B. D. McCombe. (1977). Effects of implantant depth distribution on photoluminescence spectra in Be-implanted GaAs. Applied Physics Letters. 31(12). 845–847. 6 indexed citations
17.
Dietrich, H.B., et al.. (1976). Anomalous migration of ion-implanted Al in Si. Applied Physics Letters. 28(4). 182–184. 18 indexed citations
18.
Hill, K. W., A.R. Knudson, & J. Comas. (1976). New matrix effect in ion-excited x-ray elemental analysis. Applied Physics Letters. 28(9). 497–499. 3 indexed citations
19.
Evans, Bruce D., et al.. (1972). Coloration Induced in MgO by MeVNe+20Bombardment. Physical review. B, Solid state. 6(6). 2453–2462. 52 indexed citations
20.
Comas, J., et al.. (1970). Coloration of LiF by 3.0 MeV 3He, 40Ar, 84Kr, and 2.0MeV 129Xe ions. Journal of Physics and Chemistry of Solids. 31(6). 1361–1373. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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