I. Strzałkowski

533 total citations
12 papers, 320 citations indexed

About

I. Strzałkowski is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, I. Strzałkowski has authored 12 papers receiving a total of 320 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 2 papers in Condensed Matter Physics. Recurrent topics in I. Strzałkowski's work include Semiconductor materials and devices (7 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and ZnO doping and properties (3 papers). I. Strzałkowski is often cited by papers focused on Semiconductor materials and devices (7 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and ZnO doping and properties (3 papers). I. Strzałkowski collaborates with scholars based in Poland, Germany and United States. I. Strzałkowski's co-authors include C.R. Crowell, Sharad G. Joshi, Jacek Baranowski, Cezariusz Jastrzębski, Sławomir Podsiadło, A. Turos, A.M. Abdul-Kader, D. Grambole, R. Ratajczak and W. Gębicki and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

I. Strzałkowski

12 papers receiving 310 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
I. Strzałkowski Poland	5	167	152	140	43	35	12	320
E. Schuster Germany	12	264 1.6×	115 0.8×	97 0.7×	97 2.3×	67 1.9×	27	354
Kenzo Fujiwara Japan	16	459 2.7×	379 2.5×	132 0.9×	37 0.9×	23 0.7×	53	585
Sadao Adachi Japan	8	164 1.0×	300 2.0×	262 1.9×	24 0.6×	33 0.9×	13	420
E. F. da Silva Brazil	9	257 1.5×	160 1.1×	133 0.9×	27 0.6×	27 0.8×	24	394
R. Bhattacharya India	10	118 0.7×	189 1.2×	212 1.5×	26 0.6×	55 1.6×	26	333
K. Schüll Germany	11	318 1.9×	326 2.1×	177 1.3×	63 1.5×	28 0.8×	26	418
E. H. Conrad United States	11	224 1.3×	118 0.8×	264 1.9×	55 1.3×	11 0.3×	18	424
A.D. Inglis Canada	12	143 0.9×	201 1.3×	97 0.7×	56 1.3×	40 1.1×	37	376
J.V. Thordson Sweden	11	277 1.7×	203 1.3×	60 0.4×	153 3.6×	21 0.6×	32	352
Hisashi Nara Japan	9	272 1.6×	164 1.1×	89 0.6×	18 0.4×	26 0.7×	14	334

Countries citing papers authored by I. Strzałkowski

Since Specialization

Citations

This map shows the geographic impact of I. Strzałkowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Strzałkowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Strzałkowski more than expected).

Fields of papers citing papers by I. Strzałkowski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Strzałkowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Strzałkowski. The network helps show where I. Strzałkowski may publish in the future.

Co-authorship network of co-authors of I. Strzałkowski

This figure shows the co-authorship network connecting the top 25 collaborators of I. Strzałkowski. A scholar is included among the top collaborators of I. Strzałkowski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Strzałkowski. I. Strzałkowski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Turos, A., et al.. (2005). Hydrogen behaviour in novel materials for spintronic: GaFeN codoped with Mg, Si and Al. Vacuum. 78(2-4). 285–290. 3 indexed citations

Podsiadło, Sławomir, T. Szyszko, A. Turos, et al.. (2003). Determination of hydrogen in GaMnN and GaMnMgN by nuclear reaction analysis. Vacuum. 70(2-3). 207–213. 3 indexed citations

Strzałkowski, I.. (2000). Condensed Matter Physics. European Journal of Physics. 21(4). 368–368. 154 indexed citations

Jastrzębski, Cezariusz & I. Strzałkowski. (2000). Reversible and irreversible interface trap centres generated at high electric fields in MOS structures. Microelectronics Reliability. 40(4-5). 755–758. 4 indexed citations

Strzałkowski, I., et al.. (1996). Positive and negative charge creation in the SiO2 film of a MOS transistor by high electric field stress. Applied Physics A. 63(2). 179–182. 3 indexed citations

Strzałkowski, I., et al.. (1993). Electric Field Stimulated Emission of Electrons from Deep Traps in SiO₂. Acta Physica Polonica A. 84(4). 701–704. 1 indexed citations

Strzałkowski, I., et al.. (1990). Low field DC investigation of hot carrier trapping in silicon dioxide films. Applied Physics A. 51(1). 19–22. 1 indexed citations

Baranowski, Jacek, et al.. (1987). π-bonded model of an oxygen-vacancy center in SiO2. Journal of Applied Physics. 61(8). 2904–2909. 7 indexed citations

Strzałkowski, I., et al.. (1986). Thermal depopulation studies of electron traps in ion implanted silica layers. Applied Physics A. 40(2). 123–127. 1 indexed citations

10.

Strzałkowski, I., et al.. (1983). Electric field dependence of the capture cross section of ion-implantation-induced traps in SiO2 layers. Thin Solid Films. 99(4). 331–337. 5 indexed citations

11.

Strzałkowski, I., et al.. (1982). Photoinjection studies of ion-implantation-induced electron traps in MOS structures. Applied Physics A. 29(4). 233–236. 3 indexed citations

12.

Strzałkowski, I., Sharad G. Joshi, & C.R. Crowell. (1976). Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe. Applied Physics Letters. 28(6). 350–352. 135 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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