I. Grant

417 total citations
20 papers, 322 citations indexed

About

I. Grant is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, I. Grant has authored 20 papers receiving a total of 322 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in I. Grant's work include Semiconductor materials and interfaces (10 papers), Silicon and Solar Cell Technologies (9 papers) and Semiconductor Quantum Structures and Devices (7 papers). I. Grant is often cited by papers focused on Semiconductor materials and interfaces (10 papers), Silicon and Solar Cell Technologies (9 papers) and Semiconductor Quantum Structures and Devices (7 papers). I. Grant collaborates with scholars based in United Kingdom, Germany and Spain. I. Grant's co-authors include M.R. Brozel, R.M. Ware, D. J. Stirland, James E. Miller, M. S. Skolnick, R.C. Newman, J. Woodhead, Liesbeth Reijnen, D.T.J. Hurle and P.J. Walker and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

I. Grant

18 papers receiving 282 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. Grant United Kingdom 11 236 197 69 35 25 20 322
Hajime Yamazaki Japan 10 279 1.2× 231 1.2× 61 0.9× 31 0.9× 6 0.2× 27 338
M. Duseaux France 11 185 0.8× 176 0.9× 162 2.3× 22 0.6× 2 0.1× 12 341
A. Poudoulec France 11 302 1.3× 218 1.1× 53 0.8× 22 0.6× 2 0.1× 32 414
M. Hockly United Kingdom 9 240 1.0× 246 1.2× 91 1.3× 20 0.6× 20 318
Fumiaki Hyuga Japan 12 283 1.2× 249 1.3× 81 1.2× 18 0.5× 37 348
W. Nijman Netherlands 8 245 1.0× 246 1.2× 100 1.4× 34 1.0× 12 347
J. S. McMurray United States 12 377 1.6× 315 1.6× 47 0.7× 88 2.5× 2 0.1× 16 497
W. K. Chan United States 10 230 1.0× 229 1.2× 49 0.7× 18 0.5× 1 0.0× 22 359
P. Charalambous United Kingdom 10 42 0.2× 52 0.3× 16 0.2× 20 0.6× 10 0.4× 35 263
S. Marklund Sweden 10 175 0.7× 235 1.2× 115 1.7× 23 0.7× 16 307

Countries citing papers authored by I. Grant

Since Specialization
Citations

This map shows the geographic impact of I. Grant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Grant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Grant more than expected).

Fields of papers citing papers by I. Grant

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Grant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Grant. The network helps show where I. Grant may publish in the future.

Co-authorship network of co-authors of I. Grant

This figure shows the co-authorship network connecting the top 25 collaborators of I. Grant. A scholar is included among the top collaborators of I. Grant based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Grant. I. Grant is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Reijnen, Liesbeth, et al.. (2005). GaSb single-crystal growth by vertical gradient freeze. Journal of Crystal Growth. 275(1-2). e595–e600. 21 indexed citations
2.
Grant, I.. (2004). Progress in III-V materials technology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2 indexed citations
3.
Grant, I., et al.. (2002). Growth of S-doped 2" InP-crystals by the vertical gradient freeze technique. 533–536. 2 indexed citations
4.
Allwood, D. A., et al.. (2000). In situ characterisation of epiready III–V substrates for MOVPE. Journal of Crystal Growth. 221(1-4). 160–165. 13 indexed citations
5.
Fornari, R., J. Jiménez, E. De la Puente, et al.. (2000). Uniformity of semi-insulating InP wafers obtained by Fe diffusion. Journal of Applied Physics. 88(9). 5225–5229. 10 indexed citations
6.
Grant, I., et al.. (1994). Growth and characterization of 2 in InP crystals by the vertical gradient freeze technique. Materials Science and Engineering B. 28(1-3). 91–94. 4 indexed citations
7.
Sykes, D. E., et al.. (1994). Identification and quantification of Cu contamination on GaAs surfaces. Surface and Interface Analysis. 21(1). 51–55.
8.
Booker, G. R., et al.. (1993). Scanning IR microscopy and transmission electron microscopy studies of inhomogeneities in LEC S-doped InP. Materials Science and Engineering B. 20(1-2). 94–99. 2 indexed citations
9.
Renaud, M., M. Erman, D. Schmitz, et al.. (1991). Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518. Optical and Quantum Electronics. 23(3). 391–404.
10.
Brozel, M.R., et al.. (1987). Tin segregation and donor compensation in melt-grown gallium arsenide. Journal of Crystal Growth. 80(2). 323–332. 9 indexed citations
11.
Brozel, M.R., I. Grant, & D.T.J. Hurle. (1987). The incorporation of Cr into gallium arsenide grown by the LEC method. Journal of Crystal Growth. 80(2). 315–322. 1 indexed citations
12.
Stirland, D. J., M.R. Brozel, & I. Grant. (1985). Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations. Applied Physics Letters. 46(11). 1066–1068. 23 indexed citations
13.
Maguire, John, et al.. (1985). Defect centres involving boron impurities in irradiated and annealed high-resistivity gallium arsenide. Journal of Physics D Applied Physics. 18(10). 2029–2040. 10 indexed citations
14.
Skolnick, M. S., et al.. (1984). Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imaging. Journal of Electronic Materials. 13(1). 107–125. 23 indexed citations
15.
Brozel, M.R., I. Grant, R.M. Ware, D. J. Stirland, & M. S. Skolnick. (1984). Direct observation of fine structure in the concentration of the deep donor [EL2] and its correlation with dislocations in undoped, semi-insulating GaAs. Journal of Applied Physics. 56(4). 1109–1118. 41 indexed citations
16.
Brozel, M.R., et al.. (1984). The incorporation of tin in indium phosphide. Journal of Crystal Growth. 70(1-2). 191–198. 11 indexed citations
17.
Brozel, M.R., I. Grant, R.M. Ware, & D. J. Stirland. (1983). Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAs. Applied Physics Letters. 42(7). 610–612. 83 indexed citations
18.
Woodhead, J., et al.. (1983). Boron impurity anti-site defects in p-type gallium-rich gallium arsenide. Journal of Physics C Solid State Physics. 16(28). 5523–5533. 34 indexed citations
19.
Grant, I., et al.. (1983). Growth of indium phosphide from indium rich melts. Journal of Crystal Growth. 64(1). 32–36. 7 indexed citations
20.
Grant, I. & James E. Miller. (1975). Osteochondral fracture of the trochlea associated with fracture-dislocation of the elbow. Injury. 6(3). 257–260. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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