Hojoon Ryu

529 total citations
16 papers, 402 citations indexed

About

Hojoon Ryu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Hojoon Ryu has authored 16 papers receiving a total of 402 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 4 papers in Condensed Matter Physics. Recurrent topics in Hojoon Ryu's work include Ferroelectric and Negative Capacitance Devices (9 papers), Advanced Memory and Neural Computing (7 papers) and Semiconductor materials and devices (5 papers). Hojoon Ryu is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (9 papers), Advanced Memory and Neural Computing (7 papers) and Semiconductor materials and devices (5 papers). Hojoon Ryu collaborates with scholars based in United States, South Korea and Japan. Hojoon Ryu's co-authors include Wenjuan Zhu, Kai Xu, Zijing Zhao, Junzhe Kang, Hanwool Lee, Xia Hong, Dawei Li, Choongjae Won, N. Hur and Shaloo Rakheja and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hojoon Ryu

16 papers receiving 396 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hojoon Ryu United States 8 339 226 63 44 42 16 402
Yi‐Feng Zhao China 12 219 0.6× 317 1.4× 117 1.9× 41 0.9× 54 1.3× 30 419
Zhongguang Xu China 12 213 0.6× 319 1.4× 51 0.8× 12 0.3× 26 0.6× 22 442
Zixu Sa China 10 249 0.7× 224 1.0× 82 1.3× 17 0.4× 127 3.0× 27 364
Laura Bégon‐Lours Switzerland 11 374 1.1× 209 0.9× 52 0.8× 8 0.2× 28 0.7× 24 430
Azimkhan Kozhakhmetov United States 12 238 0.7× 339 1.5× 37 0.6× 11 0.3× 42 1.0× 18 436
Hongyi Dou United States 11 243 0.7× 129 0.6× 69 1.1× 10 0.2× 39 0.9× 37 315
Junxiang Yao China 7 126 0.4× 214 0.9× 174 2.8× 19 0.4× 40 1.0× 9 298
Qixiao Zhao China 11 344 1.0× 294 1.3× 60 1.0× 9 0.2× 59 1.4× 18 438
Zhaomeng Gao China 11 496 1.5× 410 1.8× 54 0.9× 15 0.3× 37 0.9× 31 557

Countries citing papers authored by Hojoon Ryu

Since Specialization
Citations

This map shows the geographic impact of Hojoon Ryu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hojoon Ryu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hojoon Ryu more than expected).

Fields of papers citing papers by Hojoon Ryu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hojoon Ryu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hojoon Ryu. The network helps show where Hojoon Ryu may publish in the future.

Co-authorship network of co-authors of Hojoon Ryu

This figure shows the co-authorship network connecting the top 25 collaborators of Hojoon Ryu. A scholar is included among the top collaborators of Hojoon Ryu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hojoon Ryu. Hojoon Ryu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Kang, Junzhe, Hanwool Lee, Xiaotong Xu, et al.. (2025). Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits. ACS Nano. 19(13). 12948–12959. 2 indexed citations
2.
Lee, Hanwool, Hojoon Ryu, Junzhe Kang, & Wenjuan Zhu. (2024). Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer. IEEE Electron Device Letters. 45(3). 312–315. 15 indexed citations
3.
4.
Lee, Hanwool, Hojoon Ryu, Junzhe Kang, & Wenjuan Zhu. (2023). High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates. IEEE Journal of the Electron Devices Society. 11. 167–173. 22 indexed citations
5.
Lee, Hanwool, Hojoon Ryu, & Wenjuan Zhu. (2023). Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation. Applied Physics Letters. 122(11). 7 indexed citations
6.
Ryu, Hojoon, Junzhe Kang, Minseong Park, et al.. (2023). Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO. ACS Applied Materials & Interfaces. 15(46). 53671–53677. 7 indexed citations
7.
Ryu, Hojoon, et al.. (2021). Nonconventional Analog Comparators Based on Graphene and Ferroelectric Hafnium Zirconium Oxide. IEEE Transactions on Electron Devices. 68(3). 1334–1339. 2 indexed citations
8.
Zhao, Zijing, Kai Xu, Hojoon Ryu, & Wenjuan Zhu. (2020). Strong Temperature Effect on the Ferroelectric Properties of CuInP2S6 and Its Heterostructures. ACS Applied Materials & Interfaces. 12(46). 51820–51826. 40 indexed citations
9.
Ryu, Hojoon, Kai Xu, Dawei Li, Xia Hong, & Wenjuan Zhu. (2020). Empowering 2D nanoelectronics via ferroelectricity. Applied Physics Letters. 117(8). 44 indexed citations
10.
Ryu, Hojoon, et al.. (2019). Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing. Scientific Reports. 9(1). 20383–20383. 162 indexed citations
11.
Ryu, Hojoon, et al.. (2019). Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide. IEEE Transactions on Electron Devices. 66(5). 2359–2364. 41 indexed citations
12.
Ryu, Hojoon, et al.. (2019). Ferroelectric Tunneling Junctions for Neurosynaptic Computing. 191–192. 4 indexed citations
13.
Ryu, Hojoon, et al.. (2018). Nanoscale Devices Based on Two-dimensional Materials and Ferroelectric Materials. 15. 1–4. 1 indexed citations
14.
Ryu, Hojoon, et al.. (2018). Ferroelectric Aluminum-Doped Hafnium Oxide for Memory Applications. 1–2. 1 indexed citations
15.
16.
Won, Choongjae, et al.. (2011). Diode and photocurrent effect in ferroelectric BaTiO3−δ. Journal of Applied Physics. 109(8). 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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