Hojoon Ryu
Impact in
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- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
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- Ferroelectric and Piezoelectric Materials
- 2D Materials and Applications
- MXene and MAX Phase Materials
Papers in
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- Ferroelectric and Negative Capacitance Devices 9
- Advanced Memory and Neural Computing 7
- Semiconductor materials and devices 5
- Silicon Carbide Semiconductor Technologies 2
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- 2D Materials and Applications 4
- Ferroelectric and Piezoelectric Materials 4
- MXene and MAX Phase Materials 3
- Co-authors
- Wenjuan Zhu (14 shared papers)Fubo Rao (2 shared papers)Kai Xu (5 shared papers)Junzhe Kang (5 shared papers)Hanwool Lee (4 shared papers)Zijing Zhao (4 shared papers)Xia Hong (1 shared paper)Dawei Li (1 shared paper)
- Journals
- ACS Nano (2 papers)Applied Physics Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)ACS Applied Materials & Interfaces (2 papers)IEEE Electron Device Letters (1 paper)
- Partner nations
- United StatesSouth KoreaJapan
In The Last Decade
Hojoon Ryu
16 papers receiving 427 citations
Peers
Comparison fields: 5 of 25
- Electrical and Electronic Engineering 357
- Materials Chemistry 234
- Condensed Matter Physics 47
- Electronic, Optical and Magnetic Materials 64
- Polymers and Plastics 18
Countries citing papers authored by Hojoon Ryu
This map shows the geographic impact of Hojoon Ryu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hojoon Ryu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hojoon Ryu more than expected).
Fields of papers citing papers by Hojoon Ryu
This network shows the impact of papers produced by Hojoon Ryu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hojoon Ryu. The network helps show where Hojoon Ryu may publish in the future.
Co-authors
The 19 scholars most cited alongside Hojoon Ryu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2019 | 174 | |
| 2 | 2020 | 46 | |
| 3 | 2019 | 44 | |
| 4 | 2020 | 41 | |
| 5 | 2011 | 37 | |
| 6 | 2023 | 24 | |
| 7 | 2024 | 18 | |
| 8 | 2024 | 18 | |
| 9 | 2023 | 8 | |
| 10 | 2023 | 8 | |
| 11 | 2025 | 5 | |
| 12 | 2019 | 4 | |
| 13 | 2015 | 2 | |
| 14 | 2021 | 2 | |
| 15 | 2018 | 1 | |
| 16 | 2018 | 1 |
About Hojoon Ryu
Hojoon Ryu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 16 papers that have together received 433 indexed citations. Recurring topics across this work include Ferroelectric and Negative Capacitance Devices (9 papers), Advanced Memory and Neural Computing (7 papers), Semiconductor materials and devices (5 papers), 2D Materials and Applications (4 papers), GaN-based semiconductor devices and materials (4 papers), Ferroelectric and Piezoelectric Materials (4 papers), MXene and MAX Phase Materials (3 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (357 citations), Materials Chemistry (234 citations), Condensed Matter Physics (47 citations), Electronic, Optical and Magnetic Materials (64 citations) and Polymers and Plastics (18 citations). Hojoon Ryu has collaborated with scholars based in United States, South Korea and Japan. Frequent co-authors include Wenjuan Zhu, Fubo Rao, Kai Xu, Junzhe Kang, Hanwool Lee, Zijing Zhao, Xia Hong, Dawei Li, Choongjae Won and N. Hur. Their work appears in journals such as ACS Nano, Applied Physics Letters, IEEE Transactions on Electron Devices, ACS Applied Materials & Interfaces and IEEE Electron Device Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.