Hisayuki Higuchi

516 total citations
25 papers, 373 citations indexed

About

Hisayuki Higuchi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, Hisayuki Higuchi has authored 25 papers receiving a total of 373 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 4 papers in Surfaces, Coatings and Films. Recurrent topics in Hisayuki Higuchi's work include Silicon and Solar Cell Technologies (15 papers), Semiconductor materials and devices (9 papers) and Semiconductor materials and interfaces (8 papers). Hisayuki Higuchi is often cited by papers focused on Silicon and Solar Cell Technologies (15 papers), Semiconductor materials and devices (9 papers) and Semiconductor materials and interfaces (8 papers). Hisayuki Higuchi collaborates with scholars based in Japan. Hisayuki Higuchi's co-authors include Shoichi Mizuo, Hifumi Tamura, Akira Shintani, Tohru Nakamura, T. Kure, T. Shiba, K. Ogiue, Kenichi Osada, Koichiro Ishibashi and T. Nitta and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Hisayuki Higuchi

24 papers receiving 342 citations

Peers

Countries citing papers authored by Hisayuki Higuchi

Since Specialization

Citations

This map shows the geographic impact of Hisayuki Higuchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisayuki Higuchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisayuki Higuchi more than expected).

Fields of papers citing papers by Hisayuki Higuchi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hisayuki Higuchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisayuki Higuchi. The network helps show where Hisayuki Higuchi may publish in the future.

Co-authorship network of co-authors of Hisayuki Higuchi

This figure shows the co-authorship network connecting the top 25 collaborators of Hisayuki Higuchi. A scholar is included among the top collaborators of Hisayuki Higuchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hisayuki Higuchi. Hisayuki Higuchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	1/f Temperature Fluctuation Mechanism and Some Applications to Electronic Devices 2013 ·Japanese Journal of Applied Physics ·Hisayuki Higuchi, (unknown), Tohru Nakamura	16
2	A 5-mW, 10-ns Cycle TLB Using a High-Performance CAM with Low-Power Match-Detection Circuits (Special Issue on ULSI Memory Technology) 1996 ·IEICE Transactions on Electronics ·Hisayuki Higuchi, (unknown), Masataka Minami, (unknown)	1
3	Merged bipolar transistor models including the substrate current 1990 ·Electronics and Communications in Japan (Part II Electronics) ·(unknown), (unknown), Hisayuki Higuchi, (unknown), Hiroshi Ohkawara	1
4	A 7 ns/350 mW 16Kb Hi-BiCMOS Static RAM 1986 ·Makoto Suzuki, Hisayuki Higuchi, (unknown), Atsuo Watanabe, Takahide Ikeda, (unknown)	1
5	Linear rate oxidation of silicon for oxidation effect investigation 1985 ·Applied Physics Letters ·Shoichi Mizuo, Hisayuki Higuchi	4
6	Low-Power, High-Speed Bi CMOS Memory Circuits 1984 ·(unknown), (unknown), Hisayuki Higuchi, Makoto Suzuki, Takahide Ikeda, K. Ogiue	4
7	Preservation of Point Defect Distribution in FZ Silicon 1983 ·Japanese Journal of Applied Physics ·Shoichi Mizuo, Hisayuki Higuchi	2
8	Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si 1983 ·Journal of Applied Physics ·Shoichi Mizuo, (unknown), Akira Shintani, (unknown), Hisayuki Higuchi	50
9	Diffusion of Antimony in Si Directly Masked with Si<sub>3</sub>N<sub>4</sub> Films 1983 ·Denki Kagaku oyobi Kogyo Butsuri Kagaku ·Shoichi Mizuo, Hisayuki Higuchi	3
10	Oxidation Effects on Gallium Diffusion in Silicon 1982 ·Denki Kagaku oyobi Kogyo Butsuri Kagaku ·Shoichi Mizuo, Hisayuki Higuchi	8
11	U-Groove Isolation Technology for High Density Bipolar LSI's 1982 ·Japanese Journal of Applied Physics ·(unknown), T. Kure, T. Shiba, Hisayuki Higuchi	6
12	Anomalous Diffusion of B and P in Si Directly Masked with Si₃N₄ 1982 ·Japanese Journal of Applied Physics ·Shoichi Mizuo, Hisayuki Higuchi	38
13	Effects of Oxidation on Aluminum Diffusion in Silicon 1982 ·Japanese Journal of Applied Physics ·Shoichi Mizuo, Hisayuki Higuchi	23
14	The Range of Diffusion Enhancement of B and P in Si during Thermal Oxidation 1982 ·Japanese Journal of Applied Physics ·Shoichi Mizuo, Hisayuki Higuchi	13
15	Effect of Back‐Side Oxidation on B and P Diffusion in Si Directly Masked with Si3 N 4 Films 1982 ·Journal of The Electrochemical Society ·Shoichi Mizuo, Hisayuki Higuchi	28
16	Anomalous Phosphorus Diffusion in Si Directly Masked with Si₃N₄ Films 1981 ·Japanese Journal of Applied Physics ·Shoichi Mizuo, Hisayuki Higuchi	12
17	Retardation of Sb Diffusion in Si during Thermal Oxidation 1981 ·Japanese Journal of Applied Physics ·Shoichi Mizuo, Hisayuki Higuchi	106
18	Quantitative Study of Implanted Gold Atoms in Silicon p⁺-n Junctions by Measurement of the Thermally-Stimulated Current 1979 ·Japanese Journal of Applied Physics ·T. Nitta, Hisayuki Higuchi	1
19	Observation of Semiconductor Elements Using Scanning Electron Microscope 1966 ·Journal of Electron Microscopy ·Hirokazu Kimura, Hisayuki Higuchi, (unknown), Hifumi Tamura	1
20	Observations of Channels of MOS Field Effect Transistors Using a Scanning-Electron Microscope 1965 ·Japanese Journal of Applied Physics ·Hisayuki Higuchi, (unknown)	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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