Hasan Efeoğlu

1.9k citations

74 papers · 1.6k indexed · h-index 23

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Chalcogenide Semiconductor Thin Films
- Silicon and Solar Cell Technologies

Papers in ⓘ

Atomic and Molecular Physics, and Optics 50
- Semiconductor materials and interfaces 45
Electrical and Electronic Engineering 61
- Semiconductor materials and devices 29
- Integrated Circuits and Semiconductor Failure Analysis 17
- Chalcogenide Semiconductor Thin Films 15

Co-authors: A. Türüt (30 shared papers)B. Abay (14 shared papers)Y.K. Yoğurtçu (16 shared papers)M. Sağlam (9 shared papers)Fatih Gül (2 shared papers)C. Coşkun (4 shared papers)H.S. Güder (6 shared papers)Tevhit Karacalı (10 shared papers)
Journals: Semiconductor Science and Technology (7 papers)Journal of Applied Physics (4 papers)Physica B Condensed Matter (4 papers)Journal of Alloys and Compounds (4 papers)Solid-State Electronics (4 papers)
Partner nations: Türkiye United Kingdom Czechia

In The Last Decade

Hasan Efeoğlu

73 papers receiving 1.6k citations

Peers

Countries citing papers authored by Hasan Efeoğlu

Since Specialization

Citations

This map shows the geographic impact of Hasan Efeoğlu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hasan Efeoğlu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hasan Efeoğlu more than expected).

Fields of papers citing papers by Hasan Efeoğlu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hasan Efeoğlu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hasan Efeoğlu. The network helps show where Hasan Efeoğlu may publish in the future.

Co-authors

The 25 scholars most cited alongside Hasan Efeoğlu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Hasan Efeoğlu Line = papers co-authored together Hasan Efeoğlu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 74 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Interpreting the nonideal reverse bias C-V characteristics and importance of the dependence of Schottky barrier height on applied voltage Physica B Condensed Matter ·A. Türüt, M. Sağlam, Hasan Efeoğlu, Necati Yalçın, Muhammed Yildirim, B. Abay	1995	150
2	Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer Solid-State Electronics ·E. Ayyıldız, A. Türüt, Hasan Efeoğlu, Sebahattin Tüzemen, M. Sağlam, Y.K. Yoğurtçu	1996	81
3	Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes Semiconductor Science and Technology ·C. Coşkun, Şaki̇r Aydoğan, Hasan Efeoğlu	2003	75
4	Solvent effect on the ground and excited state dipole moments of fluorescein Journal of Molecular Structure THEOCHEM ·Bilal Acemioğlu, Mustafa Arık, Hasan Efeoğlu, Yavuz Onganer	2001	74
5	Temperature dependence of the optical energy gap and Urbach–Martienssen’s tail in the absorption spectra of the layered semiconductor Tl2GaInSe4 Journal of Physics and Chemistry of Solids ·B. Abay, H.S. Güder, Hasan Efeoğlu, Y.K. Yoğurtçu	2001	59
6	High barrier metallic polymer/p-type silicon Schottky diodes Solid-State Electronics ·Yavuz Onganer, M. Sağlam, A. Türüt, Hasan Efeoğlu, S. Tüzemen	1996	57
7	ZnO and ZnO1−x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior Ceramics International ·Fatih Gül, Hasan Efeoğlu	2017	56
8	Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height Physica B Condensed Matter ·F.E. Cimilli, M. Sağlam, Hasan Efeoğlu, A. Türüt	2009	55
9	Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor Superlattices and Microstructures ·Fatih Gül, Hasan Efeoğlu	2016	54
10	Barrier characteristics of Cd/p-GaTe Schottky diodes based onI V Tmeasurements Semiconductor Science and Technology ·B. Abay, G. �ankaya, H S G der, Hasan Efeoğlu, Y K Yogurt u	2002	54
11	Temperature dependence of current–voltage characteristics of Sn/p-GaTe Schottky diodes Applied Surface Science ·C. Coşkun, Mehmet Biber, Hasan Efeoğlu	2003	53
12	Temperature dependent I–V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung’s model Physica B Condensed Matter ·D. Korucu, A. Türüt, Hasan Efeoğlu	2013	53
13	Recombination processes in erbium-doped MBE silicon Semiconductor Science and Technology ·Hasan Efeoğlu, J.H. Evans, T. E. Jackman, B. Hamilton, D. C. Houghton, Jerzy M. Langer, А. R. Peaker, D. D. Perovic, I. Poole, Naveen Ravel, P.L.F. Hemment, Chih-Chuan Chan	1993	49
14	Influence of Al₂O₃barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures Journal of Semiconductors ·Abdulkerim Karabulut, Hasan Efeoğlu, A. Türüt	2017	41
15	Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/n-InP/In Schottky diodes Journal of Materials Science Materials in Electronics ·F.E. Cimilli, Hasan Efeoğlu, M. Sağlam, A. Türüt	2008	35
16	The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range Journal of Alloys and Compounds ·A. Türüt, M. Coșkun, F. M. Coşkun, Ö. Polat, Z. Durmuş, Müjdat Çağlar, Hasan Efeoğlu	2018	33
17	Photoluminescence characterization of GaTe single crystals Journal of Luminescence ·H.S. Güder, B. Abay, Hasan Efeoğlu, Y.K. Yoğurtçu	2001	32
18	Excitonic absorption and Urbach-Martienssen's tails in Er-doped and undoped n-type InSe Journal of Physics D Applied Physics ·B. Abay, H.S. Güder, Hasan Efeoğlu, Y.K. Yoğurtçu	1999	23
19	Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot Solid-State Electronics ·Murat Gülnahar, Hasan Efeoğlu	2009	23
20	The effect of silicon loss and fabrication tolerance on spectral properties of porous silicon Fabry-Perot cavities in sensing applications Optics Express ·Uğur Cem Hasar, İbrahim Yücel Özbek, Emin Argun Oral, Tevhit Karacalı, Hasan Efeoğlu	2012	22

About Hasan Efeoğlu

Hasan Efeoğlu is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 74 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (45 papers), Semiconductor materials and devices (29 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Chalcogenide Semiconductor Thin Films (15 papers), Nanowire Synthesis and Applications (13 papers), Silicon Nanostructures and Photoluminescence (13 papers), Solid-state spectroscopy and crystallography (12 papers) and Neuroscience and Neural Engineering (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (998 citations), Electrical and Electronic Engineering (1.3k citations), Materials Chemistry (698 citations), Electronic, Optical and Magnetic Materials (171 citations) and Polymers and Plastics (124 citations). Hasan Efeoğlu has collaborated with scholars based in Türkiye, United Kingdom and Czechia. Frequent co-authors include A. Türüt, B. Abay, Y.K. Yoğurtçu, M. Sağlam, Fatih Gül, C. Coşkun, H.S. Güder, Tevhit Karacalı, Yavuz Onganer and Necati Yalçın. Their work appears in journals such as Semiconductor Science and Technology, Journal of Applied Physics, Physica B Condensed Matter, Journal of Alloys and Compounds and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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