H. Walcher

536 total citations
30 papers, 445 citations indexed

About

H. Walcher is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Walcher has authored 30 papers receiving a total of 445 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 13 papers in Condensed Matter Physics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Walcher's work include GaN-based semiconductor devices and materials (13 papers), Radio Frequency Integrated Circuit Design (11 papers) and Photonic and Optical Devices (9 papers). H. Walcher is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Radio Frequency Integrated Circuit Design (11 papers) and Photonic and Optical Devices (9 papers). H. Walcher collaborates with scholars based in Germany, Sweden and China. H. Walcher's co-authors include P. Koidl, R. Brenn, R. Locher, R. Samlenski, C. Wild, W. Müller-Sebert, N. Herres, M. Schlechtweg, V. Hurm and R. Driad and has published in prestigious journals such as Physical Review Letters, IEEE Transactions on Electron Devices and Electronics Letters.

In The Last Decade

H. Walcher

30 papers receiving 428 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Walcher Germany 8 270 265 187 68 66 30 445
K. Das United States 11 416 1.5× 281 1.1× 190 1.0× 48 0.7× 158 2.4× 30 498
Arun R. Srivatsa United States 10 252 0.9× 148 0.6× 178 1.0× 37 0.5× 68 1.0× 22 350
S. Shikata Japan 9 325 1.2× 158 0.6× 104 0.6× 21 0.3× 127 1.9× 12 392
Hui Jin Looi United Kingdom 12 358 1.3× 180 0.7× 111 0.6× 19 0.3× 80 1.2× 15 371
T. Kociniewski France 15 489 1.8× 304 1.1× 201 1.1× 38 0.6× 177 2.7× 34 634
S. Rotter Israel 10 282 1.0× 155 0.6× 189 1.0× 23 0.3× 81 1.2× 20 376
Zeyang Ren China 13 470 1.7× 380 1.4× 144 0.8× 45 0.7× 52 0.8× 58 534
M. Barbé France 10 244 0.9× 269 1.0× 58 0.3× 59 0.9× 149 2.3× 34 397
D.S. Buhaenko United Kingdom 7 292 1.1× 173 0.7× 180 1.0× 17 0.3× 95 1.4× 11 364
Petra Stumm United States 5 286 1.1× 117 0.4× 88 0.5× 98 1.4× 64 1.0× 8 350

Countries citing papers authored by H. Walcher

Since Specialization
Citations

This map shows the geographic impact of H. Walcher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Walcher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Walcher more than expected).

Fields of papers citing papers by H. Walcher

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Walcher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Walcher. The network helps show where H. Walcher may publish in the future.

Co-authorship network of co-authors of H. Walcher

This figure shows the co-authorship network connecting the top 25 collaborators of H. Walcher. A scholar is included among the top collaborators of H. Walcher based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Walcher. H. Walcher is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Reiner, Richard, Patrick Waltereit, Fouad Benkhelifa, et al.. (2014). Novel Layout and Packaging for Lateral, Low-Resistance GaN-on-Si Power Transistors. Environmental Entomology. 42(2). 1–5. 3 indexed citations
2.
Carrubba, Vincenzo La, et al.. (2014). Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 345–348. 4 indexed citations
3.
Reiner, Richard, Patrick Waltereit, Fouad Benkhelifa, et al.. (2012). Fractal structures for low-resistance large area AlGaN/GaN power transistors. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 341–344. 7 indexed citations
4.
Baeumler, M., Michael Dammann, Markus Cäsar, et al.. (2012). Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs. Materials science forum. 725. 79–82. 4 indexed citations
5.
Walcher, H., et al.. (2011). Design and realisation of a 50 W GaN class-E power amplifier. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 518–521. 3 indexed citations
6.
Driad, R., J. Rosenzweig, R. Lösch, et al.. (2011). InP DHBT-Based IC Technology for 100-Gb/s Ethernet. IEEE Transactions on Electron Devices. 58(8). 2604–2609. 11 indexed citations
7.
Derksen, Rainer H., Garth R. Jacobsen, Marek Chaciński, et al.. (2011). Setting the stage for 100GbE serial standard - the HECTO project. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–6. 1 indexed citations
8.
Dammann, M., M. Baeumler, Markus Cäsar, et al.. (2011). Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 9 indexed citations
9.
Driad, R., Colja Schubert, Johannes Fischer, et al.. (2010). 107–112 Gbit/s fully integrated CDR/1:2 DEMUX using InP-based DHBTs. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 206–209. 5 indexed citations
10.
Walcher, H., T. Maier, R. Quay, et al.. (2010). GaN power FETs for next generation mobile communication systems. 9–12. 2 indexed citations
11.
Schubert, Colja, Rainer H. Derksen, V. Hurm, et al.. (2010). 112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 22. 1–3. 8 indexed citations
12.
Hurm, V., R. Driad, Fouad Benkhelifa, et al.. (2009). InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications. Electronics Letters. 45(24). 1264–1266. 12 indexed citations
13.
Raay, F. van, R. Quay, Rudolf Kiefer, et al.. (2005). High power/High bandwidth GaN MMICs andhybrid amplifiers: design and characterization. Università degli Studi di Bologna. 373–376. 7 indexed citations
14.
Tessmann, A., R. Quay, J. Schneider, et al.. (2003). Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. AMS Acta (University of Bologna). 383–386. 3 indexed citations
15.
Leich, Martin, V. Hurm, T. Feltgen, et al.. (2002). 65 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier. Electronics Letters. 38(25). 1706–1707. 3 indexed citations
16.
Wagner, J., Klaus Koehler, M. Kunzer, et al.. (2002). <title>(AlGaIn)N ultraviolet LED chips and their use in triphosphor luminescence conversion white LEDs</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4641. 50–59. 3 indexed citations
17.
Leven, A., V. Hurm, W. Bronner, et al.. (2002). 40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 2. 683–685. 2 indexed citations
18.
Kiefer, Rudolf, R. Lösch, H. Walcher, et al.. (1998). 20 gbit/s modulation of 1.55 /spl mu/m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 8. 395–398. 1 indexed citations
19.
Wild, C., P. Koidl, W. Müller-Sebert, et al.. (1993). Chemical vapour deposition and characterization of smooth {100}-faceted diamond films. Diamond and Related Materials. 2(2-4). 158–168. 285 indexed citations
20.
Fuchs, F., H. Schneider, P. Koidl, et al.. (1991). Far-infrared emission by resonant-polaron effects in narrow-band-gapHg1−xCdxTe. Physical Review Letters. 67(10). 1310–1313. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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