H. Übensee

475 total citations
21 papers, 402 citations indexed

About

H. Übensee is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, H. Übensee has authored 21 papers receiving a total of 402 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 3 papers in Materials Chemistry. Recurrent topics in H. Übensee's work include Surface and Thin Film Phenomena (11 papers), Quantum and electron transport phenomena (8 papers) and Semiconductor materials and devices (8 papers). H. Übensee is often cited by papers focused on Surface and Thin Film Phenomena (11 papers), Quantum and electron transport phenomena (8 papers) and Semiconductor materials and devices (8 papers). H. Übensee collaborates with scholars based in Germany, Hungary and Czechia. H. Übensee's co-authors include G. Paasch, G. Gobsch, A. Laades, H. Metzner, Kevin Lauer, A. Lawerenz, M. Kittler, Manfred Reiche, R. Herrmann and Michael Krause and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

H. Übensee

21 papers receiving 396 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Übensee Germany 10 289 241 91 39 38 21 402
L.P. Sadwick United States 10 234 0.8× 186 0.8× 65 0.7× 40 1.0× 36 0.9× 54 291
N. Hayafuji Japan 12 410 1.4× 355 1.5× 75 0.8× 61 1.6× 66 1.7× 40 468
Victor V. Prokofiev Finland 12 224 0.8× 269 1.1× 56 0.6× 15 0.4× 37 1.0× 38 345
T. Sonoda Japan 10 296 1.0× 208 0.9× 40 0.4× 28 0.7× 45 1.2× 43 318
C. Sandmann United States 9 203 0.7× 199 0.8× 186 2.0× 37 0.9× 47 1.2× 14 340
S. K. Chang South Korea 8 206 0.7× 171 0.7× 245 2.7× 28 0.7× 62 1.6× 30 342
D. Darby United Kingdom 8 406 1.4× 360 1.5× 41 0.5× 18 0.5× 27 0.7× 17 443
A. Taike Japan 10 282 1.0× 223 0.9× 145 1.6× 15 0.4× 30 0.8× 31 326
R. Contreras‐Guerrero United States 11 263 0.9× 109 0.5× 175 1.9× 48 1.2× 14 0.4× 28 309
Masaaki Tomizawa Japan 10 307 1.1× 196 0.8× 48 0.5× 32 0.8× 96 2.5× 27 389

Countries citing papers authored by H. Übensee

Since Specialization
Citations

This map shows the geographic impact of H. Übensee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Übensee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Übensee more than expected).

Fields of papers citing papers by H. Übensee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Übensee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Übensee. The network helps show where H. Übensee may publish in the future.

Co-authorship network of co-authors of H. Übensee

This figure shows the co-authorship network connecting the top 25 collaborators of H. Übensee. A scholar is included among the top collaborators of H. Übensee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Übensee. H. Übensee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Reiche, Manfred, M. Kittler, H. Übensee, Michael Krause, & Eckhard Pippel. (2014). Trap-assisted tunneling on extended defects in tunnel field-effect transistors. Japanese Journal of Applied Physics. 53(4S). 04EC03–04EC03. 5 indexed citations
2.
Reiche, Manfred, et al.. (2014). Carrier transport on dislocations in silicon. AIP conference proceedings. 33–36. 1 indexed citations
3.
Reiche, Manfred, M. Kittler, Michael Krause, & H. Übensee. (2012). Electrons on dislocations. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(1). 40–43. 5 indexed citations
4.
Lauer, Kevin, A. Laades, H. Übensee, & A. Lawerenz. (2008). Study on the time decay of excess carriers in solar silicon. Materials Science and Engineering B. 159-160. 202–205. 2 indexed citations
5.
Lauer, Kevin, A. Laades, H. Übensee, H. Metzner, & A. Lawerenz. (2008). Detailed analysis of the microwave-detected photoconductance decay in crystalline silicon. Journal of Applied Physics. 104(10). 63 indexed citations
6.
Übensee, H. & G. Paasch. (1989). A First Order Generalized Thomas‐Fermi Approximation for the Electron Density in Inversion Layers. Annalen der Physik. 501(7). 537–557. 1 indexed citations
7.
Übensee, H., et al.. (1989). Modified Thomas-Fermi theory for depletion and accumulation layers inn-type GaAs. Physical review. B, Condensed matter. 39(3). 1955–1957. 17 indexed citations
8.
Übensee, H., et al.. (1988). Modified Thomas‐Fermi Approximation for Accumulation Layers in MIS Structures. physica status solidi (b). 147(2). 823–837. 16 indexed citations
9.
Paasch, G., et al.. (1988). Theory for n‐Surface Charge Layers in Hg1−xCdxTe MIS Structures. physica status solidi (b). 148(2). 611–618. 7 indexed citations
10.
Paasch, G., et al.. (1987). The influence of quantum effects on the semiconductor lf- and hf-capacitance. physica status solidi (a). 99(1). 193–204. 1 indexed citations
11.
Übensee, H., G. Paasch, & G. Gobsch. (1987). Subband structure calculation for inversion layers in InAs and InP. Solid State Communications. 62(10). 699–701. 8 indexed citations
12.
Übensee, H., et al.. (1986). A novel self‐consistent theory of the electronic structure of inversion layers in InSb MIS structures. physica status solidi (b). 134(2). 837–845. 30 indexed citations
13.
Paasch, G., et al.. (1986). Electric field versus band bending in MIS structures: Quantum interpolation formula for device modeling. physica status solidi (a). 97(1). K107–K111. 3 indexed citations
14.
Gobsch, G., G. Paasch, & H. Übensee. (1986). Self‐consistent calculation of the electronic structure of n‐inversion layers adjacent to the grain boundary in InSb bicrystals. physica status solidi (b). 135(1). 283–297. 23 indexed citations
15.
Übensee, H., et al.. (1986). Self‐consistent theory of the electronic structure of inversion layers. II. Quantum effects and the electronic properties of MIS structures. physica status solidi (b). 134(1). 367–381. 8 indexed citations
16.
Gobsch, G., G. Paasch, H. Übensee, R. Herrmann, & W. Kraak. (1985). Calculation of the Subband Structure of Inversion Layers in p‐InSb Bicrystals. physica status solidi (b). 129(2). 11 indexed citations
17.
Übensee, H., et al.. (1985). Self‐Consistent Theory of the Electronic Structure of Inversion Layers. I. A New Method Using the Modified Local Density Approximation. physica status solidi (b). 130(1). 387–402. 22 indexed citations
18.
Kelber, Jeffry A., et al.. (1983). Modified Local Density Approximation for Potentials with a Finite Step. physica status solidi (b). 120(1). 297–309. 9 indexed citations
19.
Paasch, G. & H. Übensee. (1983). Carrier Density near the Semiconductor‐Insulator Interface. Local Density Approximation for Non‐Isotropic Effective Mass. physica status solidi (b). 118(1). 255–266. 31 indexed citations
20.
Paasch, G. & H. Übensee. (1982). A Modified Local Density Approximation. Electron Density in Inversion Layers. physica status solidi (b). 113(1). 165–178. 136 indexed citations

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