A. Taike

410 total citations
31 papers, 326 citations indexed

About

A. Taike is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. Taike has authored 31 papers receiving a total of 326 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 26 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in A. Taike's work include Semiconductor Quantum Structures and Devices (22 papers), Chalcogenide Semiconductor Thin Films (14 papers) and Semiconductor Lasers and Optical Devices (12 papers). A. Taike is often cited by papers focused on Semiconductor Quantum Structures and Devices (22 papers), Chalcogenide Semiconductor Thin Films (14 papers) and Semiconductor Lasers and Optical Devices (12 papers). A. Taike collaborates with scholars based in Japan and United States. A. Taike's co-authors include Masahito Migita, Hajime Yamamoto, Makoto Konagai, Hiromi Yamamoto, Kiyoshi Takahashi, Jun Gotoh, Masahiro Aoki, N. Teraguchi, Taku Tsuchiya and Kazuhiro Mochizuki and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Taike

29 papers receiving 315 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Taike Japan 10 282 223 145 30 15 31 326
J.C. Bouley France 11 345 1.2× 248 1.1× 71 0.5× 33 1.1× 13 0.9× 29 368
T. Niina Japan 9 326 1.2× 254 1.1× 152 1.0× 38 1.3× 13 0.9× 35 359
I. Hauksson United Kingdom 11 347 1.2× 329 1.5× 261 1.8× 34 1.1× 9 0.6× 26 432
N. C. Giles‐Taylor United States 11 366 1.3× 284 1.3× 213 1.5× 24 0.8× 11 0.7× 13 423
A.W. Nelson United Kingdom 14 399 1.4× 328 1.5× 56 0.4× 24 0.8× 26 1.7× 32 443
K. Mochizuki Japan 10 304 1.1× 285 1.3× 150 1.0× 71 2.4× 35 2.3× 12 375
H. Kumabe Japan 12 335 1.2× 220 1.0× 82 0.6× 20 0.7× 42 2.8× 32 367
Ru-Shang Hsiao Taiwan 13 320 1.1× 325 1.5× 84 0.6× 50 1.7× 20 1.3× 44 354
K. Wolter Germany 11 311 1.1× 303 1.4× 74 0.5× 11 0.4× 30 2.0× 36 362
W.J. Mosby United States 7 259 0.9× 181 0.8× 81 0.6× 9 0.3× 28 1.9× 13 349

Countries citing papers authored by A. Taike

Since Specialization
Citations

This map shows the geographic impact of A. Taike's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Taike with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Taike more than expected).

Fields of papers citing papers by A. Taike

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Taike. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Taike. The network helps show where A. Taike may publish in the future.

Co-authorship network of co-authors of A. Taike

This figure shows the co-authorship network connecting the top 25 collaborators of A. Taike. A scholar is included among the top collaborators of A. Taike based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Taike. A. Taike is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sakuma, Yoshiki, K. Okamoto, Hiromitsu Sato, et al.. (2006). Semi-Cooled Operation (TLD=50?C) of 10.7-Gbit/s 1.55-μm Electro-Absorption Modulator Integrated DFB Laser for 80 km Transmission. 85–86. 2 indexed citations
2.
Sato, Harumichi, Taku Tsuchiya, T. Kitatani, et al.. (2004). In-situ cleaning for highly reliable 1.3-/spl mu/m InGaAlAs buried heterostructure laser. Optical Fiber Communication Conference. 1. 151. 2 indexed citations
3.
Sato, Hitoshi, Taku Tsuchiya, T. Kitatani, et al.. (2004). Highly reliable 1.3 µm InGaAlAs buried-heterostructure laser fabricated with in-situ cleaning. Electronics Letters. 40(11). 669–671. 8 indexed citations
4.
Shirai, Manabu, K. Watanabe, A. Taike, et al.. (2003). 40 Gbit/s electroabsorption modulators with impedance-controlled electrodes. Electronics Letters. 39(9). 733–735. 24 indexed citations
5.
Uchiyama, Hiroyuki, et al.. (2003). Smooth and anisotropic dry etching of InGaAlAs using Cl/sub 2//N/sub 2/ ECR plasma. 2. 468–471. 1 indexed citations
6.
Taike, A., et al.. (2003). Optimizing HBr-Br[sub 2]-H[sub 2]O Etchants to Form Low Defect Regrowth Interfaces for Highly Reliable InGaAsP/InP Buried-Heterostructure Lasers. Journal of The Electrochemical Society. 150(2). G117–G117. 2 indexed citations
7.
Sato, Hitoshi, A. Taike, Hiroyuki Uchiyama, et al.. (2002). Highly Reliable InGaAIAs Buried-Heterostructure Laser for 10-Gbit/s Ethernet. European Conference on Optical Communication. 2. 1–2. 1 indexed citations
8.
Shimizu, J., Masahiro Aoki, Taku Tsuchiya, et al.. (2002). Advantages of optical modulators with InGaAlSa/InGaAlAs MQW structure. Electronics Letters. 38(15). 821–822. 23 indexed citations
9.
Sato, Hitoshi, M. Aoki, Taku Tsuchiya, et al.. (1998). Improved high-temperature characteristics in a thickness-tapered 1.3-μm beam-expander integrated ridge-waveguide laser. IEEE Photonics Technology Letters. 10(4). 484–486. 2 indexed citations
10.
Aoki, Masahiro, M. Komori, Hitoshi Sato, et al.. (1997). Reliable wide-temperature-range operation of 1.3-μm beam-expander integrated laser diode for passively aligned optical modules. IEEE Journal of Selected Topics in Quantum Electronics. 3(6). 1405–1412. 6 indexed citations
11.
Taike, A., et al.. (1997). Control of the II–VI/GaAs interface reaction using hydrogen radical and Zn/As fluxes. Journal of Applied Physics. 81(9). 6165–6170. 6 indexed citations
12.
Nakatsuka, Shin‐ichi, et al.. (1996). Dependence of CdZnSe/ZnMgSSe Laser Diode Operating Characteristics on Band Gap and Net Acceptor Concentration of p-Type Cladding Layer. Japanese Journal of Applied Physics. 35(2S). 1431–1431. 3 indexed citations
13.
Taike, A., et al.. (1996). Dependence of ZnTe-based contact structure properties on nitrogen concentration. Applied Physics Letters. 68(3). 388–390. 7 indexed citations
14.
Taike, A., et al.. (1996). Effect of N-doped ZnTe layers on graded superlattices. Journal of Crystal Growth. 159(1-4). 714–717. 6 indexed citations
15.
Mochizuki, Kazuhiro, et al.. (1995). Crystallographic microstructure and electrical characteristics of Au/Pt/Ti/Ni ohmic contacts on p-type (001) ZnTe layers. Journal of Applied Physics. 78(5). 3216–3220. 8 indexed citations
16.
Mochizuki, Kazuhiro, et al.. (1995). Electrical properties and microstructures of Au/Pt/Ti/Ni ohmic contacts to p-type ZnTe. Applied Physics Letters. 67(1). 112–114. 8 indexed citations
17.
Mochizuki, Kazuhiro, et al.. (1994). Au/Pt/Ti/Ni ohmic contacts to p -ZnTe. Electronics Letters. 30(23). 1984–1985. 7 indexed citations
18.
Migita, Masahito, A. Taike, & Hajime Yamamoto. (1991). n-Type and p-type conductivity control of ZnSe grown by metalorganic molecular beam epitaxy using methyliodide and ammonia. Journal of Crystal Growth. 111(1-4). 776–781. 8 indexed citations
19.
Migita, Masahito, et al.. (1990). p-Type conduction of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxy. Journal of Crystal Growth. 101(1-4). 835–840. 20 indexed citations
20.
Taike, A., N. Teraguchi, Makoto Konagai, & Kiyoshi Takahashi. (1987). Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 26(6A). L989–L989. 26 indexed citations

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