H. Norde

1.9k total citations · 1 hit paper
33 papers, 1.6k citations indexed

About

H. Norde is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. Norde has authored 33 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in H. Norde's work include Semiconductor materials and interfaces (25 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (10 papers). H. Norde is often cited by papers focused on Semiconductor materials and interfaces (25 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (10 papers). H. Norde collaborates with scholars based in Sweden, Israel and Bangladesh. H. Norde's co-authors include P.A. Tove, S. Petersson, Jorge de Sousa Pires, F. M. d’Heurle, Francesco Pesavento, Lars Stolt, G. Possnert, J Tirén, Ulf Magnusson and H. Bleichner and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

H. Norde

32 papers receiving 1.6k citations

Hit Papers

A modified forward I-V plot for Schottky diodes with high... 1979 2026 1994 2010 1979 400 800 1.2k

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Norde Sweden 9 1.4k 1.4k 481 214 139 33 1.6k
H. Güttler Germany 11 1.6k 1.2× 1.7k 1.2× 758 1.6× 229 1.1× 219 1.6× 16 2.0k
J. A. Chroboczek France 23 626 0.5× 1.2k 0.9× 313 0.7× 246 1.1× 126 0.9× 81 1.7k
A. P. Roth Canada 17 802 0.6× 1.1k 0.8× 897 1.9× 131 0.6× 102 0.7× 97 1.6k
K.J.S. Cave 3 569 0.4× 1.4k 1.0× 429 0.9× 123 0.6× 82 0.6× 4 1.5k
B. L. Sharma India 12 465 0.3× 682 0.5× 392 0.8× 170 0.8× 71 0.5× 51 937
W.-X. Ni Sweden 23 697 0.5× 1.0k 0.7× 546 1.1× 249 1.2× 111 0.8× 111 1.4k
S. J. Chua Singapore 18 348 0.3× 729 0.5× 521 1.1× 172 0.8× 153 1.1× 52 1.0k
Ahmet Oral Türkiye 19 919 0.7× 448 0.3× 286 0.6× 296 1.4× 223 1.6× 70 1.3k
L. Largeau France 21 859 0.6× 1.1k 0.8× 519 1.1× 210 1.0× 253 1.8× 55 1.3k
J. C. Pfister France 19 863 0.6× 1.4k 1.0× 761 1.6× 340 1.6× 74 0.5× 72 1.6k

Countries citing papers authored by H. Norde

Since Specialization
Citations

This map shows the geographic impact of H. Norde's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Norde with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Norde more than expected).

Fields of papers citing papers by H. Norde

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Norde. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Norde. The network helps show where H. Norde may publish in the future.

Co-authorship network of co-authors of H. Norde

This figure shows the co-authorship network connecting the top 25 collaborators of H. Norde. A scholar is included among the top collaborators of H. Norde based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Norde. H. Norde is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Olsson, Jörgen, et al.. (2003). A capacitance-voltage measurement method for DMOS transistor channel length extraction. 135–140. 5 indexed citations
2.
Larsson, Karin, et al.. (2000). Laser assisted fabrication of single crystalline tungsten rods for use as field emitting cathodes. 5–15. 1 indexed citations
3.
Olsson, Jörgen, et al.. (1999). A Capacitance-Voltage Measurement Method for DMOS Transistor Channel Length Extraction. 135–140. 1 indexed citations
4.
Olsson, Jörgen, H. Norde, & Ulf Magnusson. (1992). Investigation of the current-voltage behavior of a combined Schottky-p-n diode. Solid-State Electronics. 35(9). 1229–1231. 1 indexed citations
5.
Tirén, J, et al.. (1990). Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors. Journal of Applied Physics. 67(4). 2148–2152. 2 indexed citations
6.
Norde, H., et al.. (1988). Determination of the mobility profile in silicon-on-sapphire material using the “fat” FET principle. Solid-State Electronics. 31(11). 1583–1585. 2 indexed citations
7.
Tove, P.A., et al.. (1986). Computer modeling and comparison of different rectifier (M-S, M-S-M, p-n-n+) diodes. IEEE Transactions on Electron Devices. 33(4). 469–476. 8 indexed citations
8.
Norde, H., et al.. (1984). Influence of metal sheet resistivity on the IV-characteristics of metal-semiconductor diodes. Solid-State Electronics. 27(4). 317–318. 1 indexed citations
9.
Norde, H., et al.. (1984). A complementary Si MESFET concept for fast logic circuits. 2 indexed citations
10.
Stolt, Lars, et al.. (1983). Schottky rectifiers on silicon using high barriers. Solid-State Electronics. 26(4). 295–297. 13 indexed citations
11.
Norde, H., et al.. (1981). The Schottky barrier height of the contacts between some rare-earth metals and p-type silicon. Applied Physics Letters. 38(11). 1 indexed citations
12.
Stolt, Lars, et al.. (1981). Contact Resistance Measurements of Platinum-Silicide and Chromium Contacts to Highly DopednandpSilicon. Physica Scripta. 24(2). 405–407. 12 indexed citations
13.
Tove, P.A., et al.. (1981). Junctions Between Amorphous and Crystalline Silicon. Physica Scripta. 24(2). 399–400. 4 indexed citations
14.
Pires, Jorge de Sousa, F. M. d’Heurle, H. Norde, S. Petersson, & P.A. Tove. (1980). Measurements of the rectifying barrier heights of various rhodium silicides with n-silicon. Applied Physics Letters. 36(2). 153–155. 21 indexed citations
15.
Tove, P.A., et al.. (1979). Electrical properties of junctions between Ge films and monocrystalline silicon. physica status solidi (a). 51(2). 491–496. 7 indexed citations
16.
Possnert, G., et al.. (1978). Oxygen Content and Depth Profiling in Silicon Surface Technology Studied by the16O(α, α)16O Resonance at 3.045 MeV. Physica Scripta. 18(6). 353–356. 8 indexed citations
17.
Norde, H., et al.. (1977). 2.5 Behaviour of amorphous Ge contacts to monocrystalline silicon. Vacuum. 27(3). 201–208. 5 indexed citations
18.
19.
Seibt, W., et al.. (1976). Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes—II. Solid-State Electronics. 19(7). 645–652. 1 indexed citations
20.
Tove, P.A., et al.. (1972). Parallell-Plate Electron Multipliers. IEEE Transactions on Nuclear Science. 19(3). 85–94. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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