H. Hedemann

403 total citations
12 papers, 322 citations indexed

About

H. Hedemann is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, H. Hedemann has authored 12 papers receiving a total of 322 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Atomic and Molecular Physics, and Optics, 12 papers in Electrical and Electronic Engineering and 4 papers in Materials Chemistry. Recurrent topics in H. Hedemann's work include Silicon and Solar Cell Technologies (12 papers), Semiconductor materials and interfaces (11 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). H. Hedemann is often cited by papers focused on Silicon and Solar Cell Technologies (12 papers), Semiconductor materials and interfaces (11 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). H. Hedemann collaborates with scholars based in Germany, Russia and United States. H. Hedemann's co-authors include W. Schröter, M. Seibt, A. A. Istratov, A. Sattler, Frank Riedel, V. V. Kveder, C. Flink, E. R. Weber, О. Ф. Вывенко and H. Hieslmair and has published in prestigious journals such as Journal of The Electrochemical Society, Journal of Physics Condensed Matter and Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment.

In The Last Decade

H. Hedemann

12 papers receiving 310 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Hedemann Germany	8	304	203	88	25	21	12	322
P. Warren France	13	457 1.5×	270 1.3×	195 2.2×	27 1.1×	48 2.3×	40	485
A. Buczkowski United States	12	334 1.1×	155 0.8×	91 1.0×	25 1.0×	40 1.9×	42	375
Nobuo Toyokura Japan	9	289 1.0×	109 0.5×	71 0.8×	26 1.0×	24 1.1×	17	330
R. G. Mazur United States	7	268 0.9×	156 0.8×	56 0.6×	31 1.2×	31 1.5×	17	301
A. Gill Finland	12	451 1.5×	223 1.1×	102 1.2×	39 1.6×	18 0.9×	29	473
V. G. Riggs United States	11	337 1.1×	299 1.5×	49 0.6×	22 0.9×	23 1.1×	12	383
M. Wendl Germany	8	372 1.2×	144 0.7×	322 3.7×	20 0.8×	11 0.5×	11	440
D. B. Aldrich United States	8	212 0.7×	245 1.2×	127 1.4×	9 0.4×	17 0.8×	18	294
R. Kurps Germany	12	427 1.4×	202 1.0×	118 1.3×	52 2.1×	50 2.4×	50	461
P. Sana United States	7	309 1.0×	95 0.5×	140 1.6×	11 0.4×	50 2.4×	15	348

Countries citing papers authored by H. Hedemann

Since Specialization

Citations

This map shows the geographic impact of H. Hedemann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Hedemann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Hedemann more than expected).

Fields of papers citing papers by H. Hedemann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Hedemann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Hedemann. The network helps show where H. Hedemann may publish in the future.

Co-authorship network of co-authors of H. Hedemann

This figure shows the co-authorship network connecting the top 25 collaborators of H. Hedemann. A scholar is included among the top collaborators of H. Hedemann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Hedemann. H. Hedemann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Hedemann, H., et al.. (2002). Measurements of energy spectra of extended defects. Journal of Physics Condensed Matter. 14(48). 13047–13059. 28 indexed citations

Riedel, Frank, H. Hedemann, & W. Schröter. (2002). Atomic structure and electronic states of extended defects in silicon. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 476(3). 596–606. 4 indexed citations

Schröter, W., V. V. Kveder, & H. Hedemann. (2001). Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 82-84. 213–218. 7 indexed citations

Schröter, W., V. V. Kveder, M. Seibt, et al.. (2000). Atomic structure and electronic states of nickel and copper silicides in silicon. Materials Science and Engineering B. 72(2-3). 80–86. 32 indexed citations

Seibt, M., et al.. (1999). Structural and Electrical Properties of Metal Silicide Precipitates in Silicon. physica status solidi (a). 171(1). 301–310. 5 indexed citations

Seibt, M., H. Hedemann, A. A. Istratov, et al.. (1999). Structural and Electrical Properties of Metal Silicide Precipitates in Silicon. physica status solidi (a). 171(1). 301–310. 66 indexed citations

Hedemann, H., et al.. (1998). The Nature of the Electronic States of Cu<sub>3</sub>Si-Precipitates in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 63-64. 369–374. 7 indexed citations

Seibt, M., et al.. (1998). Formation and Properties of Copper Silicide Precipitates in Silicon. physica status solidi (a). 166(1). 171–182. 60 indexed citations

Istratov, A. A., H. Hedemann, M. Seibt, et al.. (1998). Electrical and Recombination Properties of Copper‐Silicide Precipitates in Silicon. Journal of The Electrochemical Society. 145(11). 3889–3898. 81 indexed citations

10.

Seibt, M., et al.. (1998). Formation and Properties of Copper Silicide Precipitates in Silicon. physica status solidi (a). 166(1). 171–182. 3 indexed citations

11.

Hedemann, H. & W. Schröter. (1997). Influence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi<sub>2</sub>-Precipitates in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 293–298. 7 indexed citations

12.

Hedemann, H. & W. Schröter. (1997). Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors. Journal de Physique III. 7(7). 1389–1398. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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