H. Gant

420 total citations
10 papers, 335 citations indexed

About

H. Gant is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, H. Gant has authored 10 papers receiving a total of 335 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 6 papers in Surfaces, Coatings and Films. Recurrent topics in H. Gant's work include Semiconductor Quantum Structures and Devices (7 papers), Electron and X-Ray Spectroscopy Techniques (6 papers) and Semiconductor materials and devices (5 papers). H. Gant is often cited by papers focused on Semiconductor Quantum Structures and Devices (7 papers), Electron and X-Ray Spectroscopy Techniques (6 papers) and Semiconductor materials and devices (5 papers). H. Gant collaborates with scholars based in Germany and United States. H. Gant's co-authors include Winfried Mönch, R. S. Bauer, Helmut Clemens and Ludger Koenders and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Surface Science.

In The Last Decade

H. Gant

10 papers receiving 312 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Gant Germany	8	244	229	159	58	28	10	335
J. Carelli United States	9	357 1.5×	162 0.7×	196 1.2×	68 1.2×	45 1.6×	11	408
J. L. Yeh United States	10	332 1.4×	157 0.7×	196 1.2×	109 1.9×	43 1.5×	17	396
C. J. Spindt United States	11	303 1.2×	290 1.3×	103 0.6×	90 1.6×	34 1.2×	14	398
F. Turco France	11	284 1.2×	267 1.2×	79 0.5×	88 1.5×	34 1.2×	21	345
R. W. Streater Canada	12	250 1.0×	250 1.1×	42 0.3×	105 1.8×	78 2.8×	31	359
Youiti Yamamoto Japan	11	358 1.5×	129 0.6×	147 0.9×	84 1.4×	80 2.9×	19	448
R. Conradt Germany	8	275 1.1×	324 1.4×	36 0.2×	85 1.5×	37 1.3×	14	406
G. LeLay France	10	484 2.0×	178 0.8×	106 0.7×	198 3.4×	65 2.3×	14	560
G. A. Ausman United States	7	111 0.5×	304 1.3×	64 0.4×	130 2.2×	14 0.5×	8	416
А. Е. Dolbak Russia	11	268 1.1×	163 0.7×	96 0.6×	87 1.5×	61 2.2×	26	347

Countries citing papers authored by H. Gant

Since Specialization

Citations

This map shows the geographic impact of H. Gant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Gant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Gant more than expected).

Fields of papers citing papers by H. Gant

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Gant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Gant. The network helps show where H. Gant may publish in the future.

Co-authorship network of co-authors of H. Gant

This figure shows the co-authorship network connecting the top 25 collaborators of H. Gant. A scholar is included among the top collaborators of H. Gant based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Gant. H. Gant is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

1.

Gant, H., et al.. (1984). Auger-Elektronen-Spektroskopie an Ge:III-V(110) Hetero�berg�ngen. Analytical and Bioanalytical Chemistry. 319(6-7). 867–871. 1 indexed citations

2.

Gant, H., et al.. (1983). Anion inclusions in III-V semiconductors. Applied Physics Letters. 43(11). 1032–1034. 11 indexed citations

3.

Gant, H., et al.. (1982). Low-energy electron energy-loss spectroscopy with Ge:GaAs (110) heterostructures. Solid State Communications. 42(11). 787–791. 12 indexed citations

4.

Gant, H. & Winfried Mönch. (1982). On the chemisorption of Ge on GaAs(110) surfaces: UPS and work function measurements. Applications of Surface Science. 11-12. 332–347. 9 indexed citations

5.

Mönch, Winfried & H. Gant. (1982). Chemisorption-Induced Defects on GaAs(110) Surfaces. Physical Review Letters. 48(7). 512–515. 53 indexed citations

6.

Mönch, Winfried, et al.. (1982). The electronic structure of Ge:GaAs(110) interfaces. Journal of Vacuum Science and Technology. 21(2). 498–506. 52 indexed citations

7.

Mönch, Winfried, et al.. (1981). Surface photovoltage spectroscopy with cleaved GaAs (110) surfaces: Spectroscopy of Cr2+. Journal of Vacuum Science and Technology. 19(3). 525–530. 13 indexed citations

8.

Gant, H. & Winfried Mönch. (1981). Electron escape depths in germanium. Surface Science Letters. 105(1). A127–A127. 7 indexed citations

9.

Gant, H. & Winfried Mönch. (1981). Electron escape depths in germanium. Surface Science. 105(1). 217–224. 122 indexed citations

10.

Mönch, Winfried & H. Gant. (1980). Combined LEED, AES, and work function studies during the formation of Ge : GaAs(110) heterostructures. Journal of Vacuum Science and Technology. 17(5). 1094–1100. 55 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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