H. A. Mar

620 total citations
27 papers, 491 citations indexed

About

H. A. Mar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. A. Mar has authored 27 papers receiving a total of 491 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in H. A. Mar's work include Semiconductor Quantum Structures and Devices (13 papers), Quantum Dots Synthesis And Properties (11 papers) and Chalcogenide Semiconductor Thin Films (9 papers). H. A. Mar is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Quantum Dots Synthesis And Properties (11 papers) and Chalcogenide Semiconductor Thin Films (9 papers). H. A. Mar collaborates with scholars based in Canada and United States. H. A. Mar's co-authors include N. Salansky, J.G. Simmons, J.G. Simmons, Jacob I. Kleiman, T. L. Smith, G.W. Taylor and G. C. Weatherly and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

H. A. Mar

26 papers receiving 449 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. A. Mar Canada 14 442 343 254 26 20 27 491
C. Maissen Switzerland 11 342 0.8× 214 0.6× 281 1.1× 27 1.0× 13 0.7× 29 434
R. W. Yanka United States 13 419 0.9× 322 0.9× 181 0.7× 41 1.6× 11 0.6× 27 484
R. Bindemann Germany 12 245 0.6× 249 0.7× 170 0.7× 66 2.5× 12 0.6× 41 372
R. J. Chicotka United States 12 342 0.8× 407 1.2× 129 0.5× 68 2.6× 20 1.0× 13 471
Kazunori Moriki Japan 13 270 0.6× 135 0.4× 165 0.6× 20 0.8× 25 1.3× 37 363
T. Niina Japan 9 326 0.7× 254 0.7× 152 0.6× 38 1.5× 6 0.3× 35 359
Peter V. Gray United States 5 515 1.2× 326 1.0× 113 0.4× 14 0.5× 8 0.4× 6 552
Masakazu Ohishi Japan 10 283 0.6× 192 0.6× 266 1.0× 25 1.0× 7 0.3× 54 372
J.P. Laurenti France 10 312 0.7× 288 0.8× 127 0.5× 19 0.7× 12 0.6× 42 373
M. Hovinen United States 11 399 0.9× 388 1.1× 149 0.6× 65 2.5× 10 0.5× 30 453

Countries citing papers authored by H. A. Mar

Since Specialization
Citations

This map shows the geographic impact of H. A. Mar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. A. Mar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. A. Mar more than expected).

Fields of papers citing papers by H. A. Mar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. A. Mar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. A. Mar. The network helps show where H. A. Mar may publish in the future.

Co-authorship network of co-authors of H. A. Mar

This figure shows the co-authorship network connecting the top 25 collaborators of H. A. Mar. A scholar is included among the top collaborators of H. A. Mar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. A. Mar. H. A. Mar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kleiman, Jacob I., H. A. Mar, & G. C. Weatherly. (1989). A study of anomalously coloured regions in ZnSe grown by molecular beam epitaxy. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 59(5). 967–977. 1 indexed citations
2.
Mar, H. A., et al.. (1988). ZnSe and ZnSe/Ge epi-layers grown on (100) Si by molecular beam epitaxy. Journal of Crystal Growth. 86(1-4). 335–341. 4 indexed citations
3.
Kleiman, Jacob I., et al.. (1988). Antimony-doped ZnSe grown by molecular-beam epitaxy. Journal of Applied Physics. 63(8). 2851–2853. 10 indexed citations
4.
Kleiman, Jacob I., et al.. (1988). On epilayer tilt in ZnSe/Ge heterostructures prepared by molecular-beam epitaxy. Journal of Applied Physics. 64(3). 1201–1205. 21 indexed citations
5.
Kleiman, Jacob I., et al.. (1987). Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs And (100) Ge: A Comparative Study Of Material Quality. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 796. 86–86. 6 indexed citations
6.
Mar, H. A., et al.. (1985). Homo- and heteroepitaxial growth of high quality ZnSe by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(6). 1637–1640. 30 indexed citations
7.
Mar, H. A., et al.. (1985). Photoluminescence properties of nitrogen-doped ZnSe grown by molecular beam epitaxy. Journal of Applied Physics. 58(2). 1047–1049. 51 indexed citations
8.
Mar, H. A., et al.. (1985). Molecular beam epitaxy growth of ZnSe on (100)GaAs by compound source and separate source evaporation: A comparative study. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(2). 676–680. 29 indexed citations
9.
Mar, H. A. & N. Salansky. (1984). Photoluminescence of CdTe grown on (001) InSb by molecular beam epitaxy. Journal of Applied Physics. 56(8). 2369–2371. 32 indexed citations
10.
Mar, H. A., et al.. (1984). Study of the initial stages of growth of CdTe on (001)GaAs. Applied Physics Letters. 44(9). 898–900. 47 indexed citations
11.
Mar, H. A., et al.. (1984). Summary Abstract: MBE grown CdTe films on (001)GaAs and (001)InSb. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(2). 217–218. 1 indexed citations
12.
Mar, H. A., et al.. (1984). CdTe films on (001) GaAs:Cr by molecular beam epitaxy. Applied Physics Letters. 44(2). 237–239. 67 indexed citations
13.
Mar, H. A. & J.G. Simmons. (1977). A review of the techniques used to determine trap parameters in the MNOS structure. IEEE Transactions on Electron Devices. 24(5). 540–546. 6 indexed citations
14.
Mar, H. A., J.G. Simmons, & G.W. Taylor. (1977). Frequency response of bulk traps in the metal-oxide-silicon structure under strong-inversion conditions. Solid-State Electronics. 20(3). 241–247. 5 indexed citations
15.
Simmons, J.G. & H. A. Mar. (1976). Transient isothermal generation at the silicon-silicon oxide interface and the direct determination of interface trap distribution. Solid-State Electronics. 19(5). 369–374. 13 indexed citations
16.
Mar, H. A. & J.G. Simmons. (1975). Surface-generation statistics and associated thermal currents in metal-oxide-semiconductor structures. Physical review. B, Solid state. 11(2). 775–783. 13 indexed citations
17.
Mar, H. A. & J.G. Simmons. (1974). Determination of bulk-trap parameters in MIS structures. Applied Physics Letters. 25(9). 503–505.
18.
Mar, H. A. & J.G. Simmons. (1974). Determination of bulk trap parameters using thermal dielectric relaxation techniques. Solid-State Electronics. 17(11). 1181–1185. 5 indexed citations
19.
Mar, H. A. & J.G. Simmons. (1974). Determination of the energy distribution of interface traps in MIS systems using non-steady-state techniques. Solid-State Electronics. 17(2). 131–135. 35 indexed citations
20.
Simmons, J.G. & H. A. Mar. (1973). Thermal Bulk Emission and Generation Statistics and Associated Phenomena in Metal-Insulator-Semiconductor Devices under Non-Steady-State Conditions. Physical review. B, Solid state. 8(8). 3865–3874. 22 indexed citations

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