T. Niina

508 total citations
35 papers, 359 citations indexed

About

T. Niina is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, T. Niina has authored 35 papers receiving a total of 359 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 11 papers in Condensed Matter Physics. Recurrent topics in T. Niina's work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (17 papers) and GaN-based semiconductor devices and materials (11 papers). T. Niina is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (17 papers) and GaN-based semiconductor devices and materials (11 papers). T. Niina collaborates with scholars based in Japan. T. Niina's co-authors include Kiyoshi Yoneda, Tadao Toda, Takao Yamaguchi, Hiroaki Ishii, Kenji Kawashima, M. Shono, Yasuhiro Ueda, Hiroki Hamada, T. Ikegami and Tomoyuki Yoshie and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

T. Niina

33 papers receiving 322 citations

Peers

T. Niina

EEE

AMPO

CMP

EOMM

N. C. Giles‐Taylor United States

A. Taike Japan

P. J. Phillips United Kingdom

D. Pettit United States

M. L. Young United Kingdom

J.P. Laurenti France

P. Emanuelsson Sweden

Kimiyoshi Yamasaki Japan

U. Schmid Germany

V. G. Riggs United States

N. C. Giles‐Taylor United States

T. Niina

366 ×1.1

EEE

284 ×1.1

AMPO

213 ×1.4

24 ×0.6

CMP

11 ×0.6

EOMM

Citations per year, relative to T. Niina T. Niina (= 1×) peers N. C. Giles‐Taylor

Countries citing papers authored by T. Niina

Since Specialization

Citations

This map shows the geographic impact of T. Niina's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Niina with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Niina more than expected).

Fields of papers citing papers by T. Niina

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Niina. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Niina. The network helps show where T. Niina may publish in the future.

Co-authorship network of co-authors of T. Niina

This figure shows the co-authorship network connecting the top 25 collaborators of T. Niina. A scholar is included among the top collaborators of T. Niina based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Niina. T. Niina is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ikegami, T., et al.. (2002). Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes. 3 indexed citations

Shono, M., et al.. (1996). Real-index-guided 630-nm-band AlGaInP laser diode with AlInP current blocking layer. Conference on Lasers and Electro-Optics. 458–459. 3 indexed citations

Yoshie, Tomoyuki, et al.. (1996). P-Type Conducting ZnSe and ZnSSe by N₂-Gas Doping During Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 35(2S). 1415–1415.

Shono, M., et al.. (1996). Self-pulsating 630 nm band strain-compensated MQWAlGaInP laser diodes. Electronics Letters. 32(7). 667–668. 4 indexed citations

Suzuki, Junko, et al.. (1995). Dependence of SiC Blue Light-Emitting Diode Efficiency on the p-Type Layer Growth Temperature. Japanese Journal of Applied Physics. 34(4R). 1833–1833. 3 indexed citations

Toda, Tadao, et al.. (1994). Suppression of Cu diffusion from a bulk ZnSe substrate to a homoepitaxial layer by Se-beam irradiation as a pregrowth treatment. Applied Physics Letters. 64(25). 3419–3421. 11 indexed citations

Shono, M., et al.. (1993). High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier. Electronics Letters. 29(11). 1010–1011. 12 indexed citations

Yamaguchi, Takao, et al.. (1991). GaAs buried heterostructure vertical cavity top-surface emitting lasers. IEEE Journal of Quantum Electronics. 27(6). 1386–1390. 17 indexed citations

Yamaguchi, Takao, et al.. (1990). Fabrication of SiC Blue LEDs Using Off-Oriented Substrates. Japanese Journal of Applied Physics. 29(2A). L343–L343. 21 indexed citations

10.

Yamaguchi, Takao, et al.. (1990). Fundamental transverse mode 100-mW semiconductor laser with high reliability. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1219. 126–126. 7 indexed citations

11.

Yamaguchi, Takao, et al.. (1989). Monolithic Four-Beam Semiconductor Laser Array With Built-In Monitoring Photodiodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1043. 17–17. 3 indexed citations

12.

Ueda, Yasuhiro, et al.. (1989). Liquid Phase Homoepitaxial Growth of 4H-SiC Crystals and Fabrication Techniques of Bluish-Purple Light-Emitting Diodes. MRS Proceedings. 162. 3 indexed citations

13.

Kawashima, Kenji, et al.. (1989). Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions. Japanese Journal of Applied Physics. 28(4A). L667–L667. 50 indexed citations

14.

Ishii, Hiroaki, et al.. (1989). Growth and characterization of MBE-grown ZnTe:P. Journal of Crystal Growth. 95(1-4). 517–521. 21 indexed citations

15.

Kawashima, Kenji, et al.. (1988). GaAs/Ga0.65Al0.35As DBR surface emitting lasers grown by OMVPE. Journal of Crystal Growth. 93(1-4). 809–813. 5 indexed citations

16.

Yamaguchi, Takao, et al.. (1987). Fabrication of GaAs/AlGaAs GRIN-SCH Lasers with Newly Developed Ridge Waveguide. Japanese Journal of Applied Physics. 26(6A). L935–L935. 2 indexed citations

17.

Niina, T., et al.. (1985). Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method. 2 indexed citations

18.

Yoneda, Kiyoshi, et al.. (1984). Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxy. Applied Physics Letters. 45(12). 1300–1302. 56 indexed citations

19.

Niina, T., et al.. (1983). A buried-cap planar stripe (BCP) GaAlAs laser with ZnSe current-confinement region by MBE. IEEE Journal of Quantum Electronics. 19(6). 1021–1025. 5 indexed citations

20.

Niina, T., et al.. (1982). Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting Diodes. Japanese Journal of Applied Physics. 21(6A). L387–L387. 57 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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