Jaesung Jo

640 total citations
16 papers, 530 citations indexed

About

Jaesung Jo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Jaesung Jo has authored 16 papers receiving a total of 530 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Jaesung Jo's work include Semiconductor materials and devices (12 papers), ZnO doping and properties (7 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). Jaesung Jo is often cited by papers focused on Semiconductor materials and devices (12 papers), ZnO doping and properties (7 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). Jaesung Jo collaborates with scholars based in South Korea and United States. Jaesung Jo's co-authors include Changhwan Shin, Hyun‐Yong Yu, Woo Young Choi, Jae Won Shim, Jung‐Dong Park, Rebecca L. Peterson, Neil P. Dasgupta, Orlando Trejo, Jeong‐Kyu Kim and Seung‐Hwan Kim and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Chemistry of Materials.

In The Last Decade

Jaesung Jo

16 papers receiving 512 citations

Peers

Jaesung Jo
Karine Florent Belgium
Minju Shin South Korea
Amithraj Valsaraj United States
Ukjin Jung South Korea
Manoj K. Jamarkattel United States
Jaison Kavalakkatt Germany
Arnab Pal United States
R. E. Banai United States
Tien Dat Ngo South Korea
Soo Doo Chae United States
Karine Florent Belgium
Jaesung Jo
Citations per year, relative to Jaesung Jo Jaesung Jo (= 1×) peers Karine Florent

Countries citing papers authored by Jaesung Jo

Since Specialization
Citations

This map shows the geographic impact of Jaesung Jo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jaesung Jo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jaesung Jo more than expected).

Fields of papers citing papers by Jaesung Jo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jaesung Jo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jaesung Jo. The network helps show where Jaesung Jo may publish in the future.

Co-authorship network of co-authors of Jaesung Jo

This figure shows the co-authorship network connecting the top 25 collaborators of Jaesung Jo. A scholar is included among the top collaborators of Jaesung Jo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jaesung Jo. Jaesung Jo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Jo, Jaesung, et al.. (2023). Demonstration and analysis of ambipolar SnO inverter with high gain. Applied Physics Letters. 122(1). 7 indexed citations
2.
Jo, Jaesung, et al.. (2023). Effect of Metal Capping Layer in Achieving Record High p-Type SnO Thin Film Transistor Mobility. IEEE Transactions on Electron Devices. 71(1). 574–580. 6 indexed citations
3.
Jo, Jaesung, et al.. (2023). Tunable Sulfur Incorporation into Atomic Layer Deposition Films Using Solution Anion Exchange. Chemistry of Materials. 35(6). 2503–2517. 3 indexed citations
4.
Jo, Jaesung, Zihao Deng, Nocona Sanders, Emmanouil Kioupakis, & Rebecca L. Peterson. (2022). Experimental and theoretical study of hole scattering in RF sputtered p-type Cu2O thin films. Applied Physics Letters. 120(11). 8 indexed citations
5.
Jo, Jaesung, et al.. (2022). Extraction of SnO Subbandgap Defect Density by Numerical Modeling of p-Type TFTs. IEEE Transactions on Electron Devices. 69(5). 2436–2442. 5 indexed citations
6.
Jo, Jaesung, et al.. (2021). Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology. The Journal of Physical Chemistry C. 125(17). 9383–9390. 24 indexed citations
7.
Jo, Jaesung, et al.. (2020). Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors. IEEE Transactions on Electron Devices. 67(12). 5557–5563. 24 indexed citations
8.
Jo, Jaesung, et al.. (2017). Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor. IEEE Transactions on Electron Devices. 64(12). 4974–4979. 10 indexed citations
9.
Jo, Jaesung, et al.. (2016). Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance. IEICE Transactions on Electronics. E99.C(5). 544–546. 1 indexed citations
10.
Jo, Jaesung, et al.. (2016). Capacitance matching effects in negative capacitnace field effect transistor. 8. 174–175. 5 indexed citations
11.
Jo, Jaesung & Changhwan Shin. (2016). Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching. IEEE Electron Device Letters. 37(3). 245–248. 176 indexed citations
12.
Jo, Jaesung, et al.. (2015). Worst Case Sampling Method with Confidence Ellipse for Estimating the Impact of Random Variation on Static Random Access Memory (SRAM). JSTS Journal of Semiconductor Technology and Science. 15(3). 374–380. 2 indexed citations
13.
Jo, Jaesung & Changhwan Shin. (2015). Experimental observation of voltage amplification using negative capacitance for sub-60 mV/decade CMOS devices. Current Applied Physics. 15(3). 352–355. 27 indexed citations
14.
Jo, Jaesung, Woo Young Choi, Jung‐Dong Park, et al.. (2015). Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices. Nano Letters. 15(7). 4553–4556. 159 indexed citations
15.
Jo, Jaesung & Changhwan Shin. (2014). Impact of temperature on negative capacitance field‐effect transistor. Electronics Letters. 51(1). 106–108. 37 indexed citations
16.
Kim, Gwang-Sik, Jeong‐Kyu Kim, Seung‐Hwan Kim, et al.. (2014). Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact. IEEE Electron Device Letters. 35(11). 1076–1078. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026