G.L. Schnable

721 total citations
55 papers, 483 citations indexed

About

G.L. Schnable is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G.L. Schnable has authored 55 papers receiving a total of 483 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in G.L. Schnable's work include Semiconductor materials and devices (27 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Silicon and Solar Cell Technologies (13 papers). G.L. Schnable is often cited by papers focused on Semiconductor materials and devices (27 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Silicon and Solar Cell Technologies (13 papers). G.L. Schnable collaborates with scholars based in United States, Finland and Japan. G.L. Schnable's co-authors include Werner Kern, R. B. Comizzoli, J. L. Vossen, John M. Shaw, J.P. Spratt, J. Fred Hazel, John L. Vossen, J. A. Amick, L. K. White and Wallace M. McNabb and has published in prestigious journals such as Proceedings of the IEEE, Journal of The Electrochemical Society and The Journal of Physical Chemistry.

In The Last Decade

G.L. Schnable

50 papers receiving 413 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G.L. Schnable United States 13 380 124 103 89 56 55 483
W. W. Grannemann United States 11 297 0.8× 233 1.9× 101 1.0× 41 0.5× 65 1.2× 33 416
Y. Danto France 12 352 0.9× 95 0.8× 64 0.6× 41 0.5× 62 1.1× 72 474
Hiroshi Osanai Japan 10 424 1.1× 108 0.9× 201 2.0× 62 0.7× 71 1.3× 13 578
M. A. Hopper Canada 11 294 0.8× 182 1.5× 66 0.6× 28 0.3× 54 1.0× 16 413
Robert L. Holman United States 12 340 0.9× 292 2.4× 200 1.9× 63 0.7× 103 1.8× 35 517
E. Kauer Germany 8 231 0.6× 278 2.2× 42 0.4× 57 0.6× 35 0.6× 13 391
Richard C. Neville United States 7 326 0.9× 407 3.3× 99 1.0× 166 1.9× 73 1.3× 16 639
Z.G. Liu China 11 223 0.6× 346 2.8× 74 0.7× 112 1.3× 83 1.5× 25 462
F. Sabary France 11 416 1.1× 127 1.0× 55 0.5× 43 0.5× 96 1.7× 25 543
Yongjoo Jeon United States 13 765 2.0× 329 2.7× 107 1.0× 91 1.0× 30 0.5× 21 832

Countries citing papers authored by G.L. Schnable

Since Specialization
Citations

This map shows the geographic impact of G.L. Schnable's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.L. Schnable with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.L. Schnable more than expected).

Fields of papers citing papers by G.L. Schnable

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.L. Schnable. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.L. Schnable. The network helps show where G.L. Schnable may publish in the future.

Co-authorship network of co-authors of G.L. Schnable

This figure shows the co-authorship network connecting the top 25 collaborators of G.L. Schnable. A scholar is included among the top collaborators of G.L. Schnable based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.L. Schnable. G.L. Schnable is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schnable, G.L.. (2023). Formation of thin-film resistors on silicon substrates. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information).
2.
Schnable, G.L., et al.. (1994). Reliability Implications of Lateral Alkali‐Ion Migration in MOS Integrated Circuits. Journal of The Electrochemical Society. 141(11). 3250–3253. 1 indexed citations
3.
Schnable, G.L., et al.. (1990). Devitrification in Borophosphosilicate Glass Films Used in VLSI. Journal of The Electrochemical Society. 137(12). 3973–3974. 31 indexed citations
4.
Wu, Chih-Wei, et al.. (1984). Improved Conductivity in Polysilicon Films by Pre‐annealing. Journal of The Electrochemical Society. 131(1). 216–217. 5 indexed citations
5.
Schnable, G.L., et al.. (1983). Catastrophic Burn Out in Power VDMOS Field-Effect Transistors. Reliability physics. 173–177. 2 indexed citations
6.
Schnable, G.L. & R. B. Comizzoli. (1981). CMOS integrated circuit reliability. Microelectronics Reliability. 21(1). 33–50. 5 indexed citations
7.
White, L. K., et al.. (1981). The Detection of Corrosion Phenomena with pH‐Sensitive Fluorescent Dyes on Aluminum‐ and Gold‐Metallized IC Devices. Journal of The Electrochemical Society. 128(5). 953–956. 12 indexed citations
8.
Comizzoli, R. B., et al.. (1980). Corrosion of Aluminum IC Metaillization with Defective Surface Passivation Layer. Reliability physics. 282–292. 12 indexed citations
9.
Schnable, G.L., et al.. (1978). CMOS reliability. Microelectronics Reliability. 17(2). 287–304. 9 indexed citations
10.
Schnable, G.L. & Péter Schmidt. (1976). Applications of Electrochemistry to Fabrication of Semiconductor Devices. Journal of The Electrochemical Society. 123(9). 310C–315C. 5 indexed citations
11.
Kern, Werner, et al.. (1976). CVD glass films for passivation of silicon devices - Preparation, composition, and stress properties. 37. 3. 12 indexed citations
12.
Kern, Werner, et al.. (1975). Improved CVD Techniques for Depositing Passivation Layers of ICs. Defense Technical Information Center (DTIC). 1 indexed citations
13.
Schnable, G.L., Werner Kern, & R. B. Comizzoli. (1975). Passivation Coatings on Silicon Devices. Journal of The Electrochemical Society. 122(8). 1092–1103. 29 indexed citations
14.
Vossen, J. L., G.L. Schnable, & Werner Kern. (1974). Processes for multilevel metallization. Journal of Vacuum Science and Technology. 11(1). 60–70. 37 indexed citations
15.
Schnable, G.L., et al.. (1971). Some reliability considerations pertaining to LSI technology. IEEE Journal of Solid-State Circuits. 6(5). 327–334. 4 indexed citations
16.
Spratt, J.P., et al.. (1970). Impact of the radiation environment on integrated-circuit technology. IEEE Journal of Solid-State Circuits. 5(1). 14–23. 5 indexed citations
17.
18.
Schnable, G.L., et al.. (1967). STUDY OF CONTACT FAILURES IN INTEGRATED CIRCUITS.. Defense Technical Information Center (DTIC). 2 indexed citations
19.
Hazel, J. Fred & G.L. Schnable. (1954). Colloidal and Surface Phenomena in the Preparation of Cathode-ray Screens. The Journal of Physical Chemistry. 58(10). 812–816. 8 indexed citations
20.
Schnable, G.L., et al.. (1953). Streaming Potential Measurements and the Adhesion of Phosphors on Cathode Ray Screens. Journal of The Electrochemical Society. 100(2). 65–65. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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