Hiroshi Kanbe

658 total citations
40 papers, 531 citations indexed

About

Hiroshi Kanbe is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Instrumentation. According to data from OpenAlex, Hiroshi Kanbe has authored 40 papers receiving a total of 531 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 5 papers in Instrumentation. Recurrent topics in Hiroshi Kanbe's work include Semiconductor Quantum Structures and Devices (26 papers), Advanced Semiconductor Detectors and Materials (14 papers) and Semiconductor Lasers and Optical Devices (12 papers). Hiroshi Kanbe is often cited by papers focused on Semiconductor Quantum Structures and Devices (26 papers), Advanced Semiconductor Detectors and Materials (14 papers) and Semiconductor Lasers and Optical Devices (12 papers). Hiroshi Kanbe collaborates with scholars based in Japan and United States. Hiroshi Kanbe's co-authors include Nobuhiko Susa, Hiroaki Ando, H. Ando, Yoshiharu Yamauchi, Y. Yamamoto, Junichiro Matsumoto, T. Kaneda, Masanori Ito, Shunji Nojima and Masafumi Taniwaki and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hiroshi Kanbe

37 papers receiving 493 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hiroshi Kanbe Japan 14 396 361 74 67 61 40 531
Jan Amaru Töfflinger Peru 12 338 0.9× 195 0.5× 55 0.7× 167 2.5× 3 0.0× 49 474
S. Martini Brazil 13 247 0.6× 296 0.8× 52 0.7× 146 2.2× 32 372
S. Karirinne Finland 10 308 0.8× 267 0.7× 54 0.7× 94 1.4× 22 368
Xingyou Chen China 12 252 0.6× 182 0.5× 59 0.8× 96 1.4× 50 0.8× 41 356
J.R. Knight United Kingdom 8 223 0.6× 146 0.4× 24 0.3× 31 0.5× 3 0.0× 16 304
K. Tsuji Japan 11 206 0.5× 59 0.2× 77 1.0× 145 2.2× 4 0.1× 38 360
Adhimar Flávio Oliveira Brazil 10 88 0.2× 33 0.1× 14 0.2× 69 1.0× 102 1.7× 48 409
Tomoyuki Yamazaki Japan 9 96 0.2× 113 0.3× 21 0.3× 37 0.6× 38 286
Hamed Dehdashti Jahromi Iran 13 246 0.6× 118 0.3× 119 1.6× 173 2.6× 10 0.2× 33 374
M. Haddad United States 11 456 1.2× 199 0.6× 101 1.4× 92 1.4× 3 0.0× 23 490

Countries citing papers authored by Hiroshi Kanbe

Since Specialization
Citations

This map shows the geographic impact of Hiroshi Kanbe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hiroshi Kanbe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hiroshi Kanbe more than expected).

Fields of papers citing papers by Hiroshi Kanbe

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hiroshi Kanbe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hiroshi Kanbe. The network helps show where Hiroshi Kanbe may publish in the future.

Co-authorship network of co-authors of Hiroshi Kanbe

This figure shows the co-authorship network connecting the top 25 collaborators of Hiroshi Kanbe. A scholar is included among the top collaborators of Hiroshi Kanbe based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hiroshi Kanbe. Hiroshi Kanbe is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dang, Giang T., Hiroshi Kanbe, Toshiyuki Kawaharamura, & Masafumi Taniwaki. (2011). Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO. Journal of Applied Physics. 110(8). 4 indexed citations
2.
Kanbe, Hiroshi, et al.. (2007). Analysis of a wafer bonded Ge∕Si heterojunction by transmission electron microscopy. Applied Physics Letters. 91(14). 15 indexed citations
3.
Gotoh, Hideki, H. Ando, & Hiroshi Kanbe. (1996). Excitonic optical properties in semiconductor thin quantum boxes of intermediate regime between zero and two dimensions. Applied Physics Letters. 68(15). 2132–2134. 8 indexed citations
4.
Chavez-Pirson, Arturo, et al.. (1994). Quantum Wire Microcavity Laser. Optics and Photonics News. 5(12). 17–17.
5.
Ando, H., Shunji Nojima, & Hiroshi Kanbe. (1993). Band-edge optical absorption spectra of GaAs quantum wires calculated by multiband effective mass theory. Journal of Applied Physics. 74(10). 6383–6390. 38 indexed citations
6.
Ando, H., H. Oohashi, & Hiroshi Kanbe. (1991). Carrier-induced optical nonlinear effects in semiconductor quantum well wire structure. Journal of Applied Physics. 70(11). 7024–7032. 24 indexed citations
7.
Mitsunaga, Masaharu, K. Kubodera, & Hiroshi Kanbe. (1986). Effects of hyperfine structures on an optical stimulated echo memory device. Optics Letters. 11(5). 339–339. 12 indexed citations
8.
Kanbe, Hiroshi, et al.. (1985). GaAs travelling-wave amplifier. International Journal of Electronics. 58(4). 587–611. 9 indexed citations
9.
Yamauchi, Yoshiharu, Nobuhiko Susa, & Hiroshi Kanbe. (1982). Growth of VPE InP/InGaAs on InP for photodiode application. Journal of Crystal Growth. 56(2). 402–409. 19 indexed citations
10.
Ando, Hiroaki, Nobuhiko Susa, & Hiroshi Kanbe. (1981). Carrier Density Profiles in Zn- and Cd-Diffused InP. Japanese Journal of Applied Physics. 20(3). L197–L197. 32 indexed citations
11.
Susa, Nobuhiko, Yoshiharu Yamauchi, & Hiroshi Kanbe. (1981). Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 20(4). L253–L253. 9 indexed citations
12.
Yamamoto, Y. & Hiroshi Kanbe. (1980). Zn Diffusion in In_xGa_ As with ZnAs_2 Source. Japanese Journal of Applied Physics. 19(1). 121–128. 1 indexed citations
13.
Kanbe, Hiroshi, Nobuhiko Susa, & H. Ando. (1980). Structures of InGaAs Avalanche Photodiodes. WD1–WD1. 3 indexed citations
14.
Kanbe, Hiroshi & G. Großkopf. (1980). Dark Current Noise Properties of a Germanium Avalanche Photodiode. Japanese Journal of Applied Physics. 19(12). L767–L770. 2 indexed citations
15.
Ando, Hiroaki, Hiroshi Kanbe, Masanori Ito, & T. Kaneda. (1980). Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode. Japanese Journal of Applied Physics. 19(6). L277–L277. 54 indexed citations
16.
Yamamoto, Y. & Hiroshi Kanbe. (1980). Zn Diffusion in InxGa1-xAs with ZnAs2Source. Japanese Journal of Applied Physics. 19(1). 121–128. 42 indexed citations
17.
Kanbe, Hiroshi, Nobuhiko Susa, H. Nakagome, & H. Ando. (1980). InGaAs avalanche photodiode with InP p - n junction. Electronics Letters. 16(5). 163–165. 33 indexed citations
18.
Susa, Nobuhiko, Hiroshi Kanbe, Hiroaki Ando, & Yoshiro Ohmachi. (1980). Plasma Enhanced CVD Si3N4Film Applied to InP Avalanche Photodiodes. Japanese Journal of Applied Physics. 19(11). L675–L678. 24 indexed citations
19.
Kanbe, Hiroshi, et al.. (1977). Figure of merit for avalanche photodiodes. Electronics Letters. 13(9). 262–264. 2 indexed citations
20.
Kanbe, Hiroshi, Tatsuya Kimura, Yoshihiko Mizushima, & Kenji Kajiyama. (1976). Design and Characteristics of Low Noise and High Speed Silicon Avalanche Photodiodes.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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