G. N. Dash

412 total citations
53 papers, 271 citations indexed

About

G. N. Dash is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, G. N. Dash has authored 53 papers receiving a total of 271 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 30 papers in Atomic and Molecular Physics, and Optics and 15 papers in Condensed Matter Physics. Recurrent topics in G. N. Dash's work include Semiconductor Quantum Structures and Devices (26 papers), Radio Frequency Integrated Circuit Design (15 papers) and GaN-based semiconductor devices and materials (15 papers). G. N. Dash is often cited by papers focused on Semiconductor Quantum Structures and Devices (26 papers), Radio Frequency Integrated Circuit Design (15 papers) and GaN-based semiconductor devices and materials (15 papers). G. N. Dash collaborates with scholars based in India, United States and Malaysia. G. N. Dash's co-authors include А. К. Панда, Jyotismita Mishra, Trupti Ranjan Lenka, R. K. Parida, Huda Fatima, Suryakanta Swain, Suneeta Satpathy, Subhashis Das, Pramod Kumar Meher and S. Satapathy and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

G. N. Dash

46 papers receiving 256 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. N. Dash India	9	218	140	72	69	36	53	271
M.J. van Duuren Belgium	11	314 1.4×	74 0.5×	33 0.5×	68 1.0×	71 2.0×	39	380
C. Drexler Germany	9	159 0.7×	234 1.7×	36 0.5×	23 0.3×	109 3.0×	15	325
W. Hafez United States	13	517 2.4×	267 1.9×	19 0.3×	38 0.6×	42 1.2×	28	546
Joshua Strong United States	8	73 0.3×	189 1.4×	16 0.2×	29 0.4×	29 0.8×	12	251
Oleksandr Prokopenko Ukraine	10	153 0.7×	252 1.8×	14 0.2×	115 1.7×	24 0.7×	51	295
C. Dahl Germany	11	291 1.3×	186 1.3×	12 0.2×	37 0.5×	32 0.9×	27	409
Young Ahn Leem South Korea	12	369 1.7×	213 1.5×	16 0.2×	13 0.2×	30 0.8×	38	404
Z. S. Gribnikov United States	10	219 1.0×	240 1.7×	11 0.2×	28 0.4×	34 0.9×	46	281
T. Vang United States	10	408 1.9×	238 1.7×	12 0.2×	8 0.1×	14 0.4×	32	416
Hin-Fai Chau United States	14	487 2.2×	301 2.1×	5 0.1×	79 1.1×	17 0.5×	36	511

Countries citing papers authored by G. N. Dash

Since Specialization

Citations

This map shows the geographic impact of G. N. Dash's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. N. Dash with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. N. Dash more than expected).

Fields of papers citing papers by G. N. Dash

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. N. Dash. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. N. Dash. The network helps show where G. N. Dash may publish in the future.

Co-authorship network of co-authors of G. N. Dash

This figure shows the co-authorship network connecting the top 25 collaborators of G. N. Dash. A scholar is included among the top collaborators of G. N. Dash based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. N. Dash. G. N. Dash is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Панда, А. К., et al.. (2020). Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor. Microsystem Technologies. 27(11). 4035–4040. 2 indexed citations

Панда, А. К., et al.. (2018). Effect of InGaAsP Cap-Layer in InP/InGaAs pnp δ-Doped Heterojunction Bipolar Transistor. 258–260. 1 indexed citations

Dash, G. N., et al.. (2018). Effect of Channel Dimensions on Transfer Characteristics of Graphene FET. 306. 341–343. 2 indexed citations

Dash, G. N., et al.. (2015). Effect of disparate carrier velocity in GaN on the terahertz characteristics of double drift region mixed tunnelling avalanche transit time diode. 3. 800–803. 1 indexed citations

Dash, G. N., et al.. (2014). High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode. 4(4). 143–150. 1 indexed citations

Lenka, Trupti Ranjan, G. N. Dash, & А. К. Панда. (2014). 2DEG transport characteristics by self-consistent subband calculations of Schrödinger and poisson equations in InAlN/GaN HEMT. 124–127. 2 indexed citations

Karan, D. K., et al.. (2013). Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode. Journal of Semiconductors. 34(1). 14001–14001. 3 indexed citations

Lenka, Trupti Ranjan, G. N. Dash, & А. К. Панда. (2013). RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT. Journal of Semiconductors. 34(11). 114003–114003. 17 indexed citations

Meher, Pramod Kumar, et al.. (2012). New encoded single-indicator sequences based on physico-chemical parameters for efficient exon identification. International Journal of Bioinformatics Research and Applications. 8(1/2). 126–126. 3 indexed citations

10.

Lenka, Trupti Ranjan, G. N. Dash, & А. К. Панда. (2012). A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs. Physics Procedia. 25. 36–43. 4 indexed citations

11.

Parida, R. K., et al.. (2012). Characteristics of a GaN-based Gunn diode for THz signal generation. Journal of Semiconductors. 33(8). 84001–84001. 4 indexed citations

12.

Панда, А. К., et al.. (2009). Studies on the characteristics of GaN-based Gunn diode for THz signal generation. 1565–1568. 2 indexed citations

13.

Панда, А. К., et al.. (2007). GaN-based gunn diode for high frequency signal generation. 48. 514–517.

14.

Dash, G. N.. (2005). Comment on “Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes” [J. Appl. Phys. 97, 043709 (2005)]. Journal of Applied Physics. 98(10).

15.

Dash, G. N., et al.. (2003). Studies on the use of wood in open area test sites. 295–303. 1 indexed citations

16.

Mishra, Jyotismita, А. К. Панда, & G. N. Dash. (1997). Design optimization of a single-sided Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region. Semiconductor Science and Technology. 12(12). 1635–1640. 5 indexed citations

17.

Панда, А. К., et al.. (1996). Computer Aided Realisation of Diffusion Based Si n+npp+ Double Drift Doping Profiles and Studies on Their Microwave Properties. physica status solidi (a). 154(2). 657–667. 2 indexed citations

18.

Dash, G. N.. (1995). A new design approach for MITATT and TUNNETT mode devices. Solid-State Electronics. 38(7). 1381–1385. 5 indexed citations

19.

Dash, G. N., et al.. (1994). Computer-aided studies on the microwave characteristics of InP/GaInAs and GaAs/GaInAs heterostructure single-drift-region impact avalanche transit time diodes. Journal of Physics D Applied Physics. 27(8). 1719–1726. 7 indexed citations

20.

Dash, G. N., et al.. (1991). Computer analysis of negative resistance profiles in silicon double drift diodes including the carrier diffusion effect. physica status solidi (a). 127(2). 577–590. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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