G. Merckel

603 total citations
27 papers, 420 citations indexed

About

G. Merckel is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Computational Mechanics. According to data from OpenAlex, G. Merckel has authored 27 papers receiving a total of 420 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 2 papers in Computer Networks and Communications and 2 papers in Computational Mechanics. Recurrent topics in G. Merckel's work include Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and devices (18 papers) and Silicon Carbide Semiconductor Technologies (14 papers). G. Merckel is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and devices (18 papers) and Silicon Carbide Semiconductor Technologies (14 papers). G. Merckel collaborates with scholars based in France, India and Romania. G. Merckel's co-authors include T. Skotnicki, Jean-Pierre Borel, J. Gautier, Dinesh Kumar Sharma, Alain Rolland, P. Senn, B. Hennion, P. Bareyre, Dinesh K. Sharma and P. Meunier and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

G. Merckel

22 papers receiving 379 citations

Peers

G. Merckel
T.J. Krutsick United States
J.S. Duster United States
S.K. Wiedmann Germany
M.M. Chowdhury United States
J.E. Moon United States
N. Garbar Ukraine
R.J.P. Lander Belgium
V.D. Archer United States
P.-F. Lu United States
L. Brévard France
T.J. Krutsick United States
G. Merckel
Citations per year, relative to G. Merckel G. Merckel (= 1×) peers T.J. Krutsick

Countries citing papers authored by G. Merckel

Since Specialization
Citations

This map shows the geographic impact of G. Merckel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Merckel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Merckel more than expected).

Fields of papers citing papers by G. Merckel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Merckel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Merckel. The network helps show where G. Merckel may publish in the future.

Co-authorship network of co-authors of G. Merckel

This figure shows the co-authorship network connecting the top 25 collaborators of G. Merckel. A scholar is included among the top collaborators of G. Merckel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Merckel. G. Merckel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Skotnicki, T., et al.. (2003). A re-examination of the physics of multiplication-induced breakdown in MOSFETs. ed 29. 87–90. 3 indexed citations
3.
Skotnicki, T., et al.. (2002). A new analog/digital CAD model for sub-halfmicron MOSFETs. 165–168. 8 indexed citations
4.
5.
Skotnicki, T., et al.. (1992). Triggering and sustaining of snapback in MOSFETs. Solid-State Electronics. 35(5). 717–721. 4 indexed citations
6.
Skotnicki, T., et al.. (1991). Triggering and sustaining of snapback in MOSFETs. Microelectronic Engineering. 15(1-4). 559–562. 5 indexed citations
7.
Skotnicki, T., et al.. (1991). New physical model of multiplication-induced breakdown in MOSFETs. Solid-State Electronics. 34(11). 1297–1307. 17 indexed citations
8.
Skotnicki, T., et al.. (1990). A study of multiplication-induced breakdown in buried-channel p-MOSFFTs. European Solid-State Device Research Conference. 269–272. 1 indexed citations
9.
Skotnicki, T., et al.. (1989). Analytical study of punchthrough in buried channel P-MOSFETs. IEEE Transactions on Electron Devices. 36(4). 690–705. 13 indexed citations
10.
Skotnicki, T., et al.. (1988). The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects. IEEE Electron Device Letters. 9(3). 109–112. 97 indexed citations
11.
Skotnicki, T., et al.. (1988). A new punchthrough current model based on the voltage-doping transformation. IEEE Transactions on Electron Devices. 35(7). 1076–1086. 18 indexed citations
12.
Skotnicki, T., et al.. (1987). The Voltage-Doping Transformation a New Approach to the Modelling of MOSFET Short-Channel Effects. 543–546. 3 indexed citations
13.
Merckel, G.. (1980). A simple model of the threshold voltage of short and narrow channel MOSFETs. Solid-State Electronics. 23(12). 1207–1213. 35 indexed citations
14.
Merckel, G.. (1980). Une méthode simple de détermination de la vitesse limite des porteurs, dans les transistors MOS. Revue de Physique Appliquée. 15(4). 879–887. 2 indexed citations
15.
Sharma, Dinesh Kumar, J. Gautier, & G. Merckel. (1978). Negative dynamic resistance in MOS devices. IEEE Journal of Solid-State Circuits. 13(3). 378–380. 34 indexed citations
16.
Sharma, Dinesh Kumar, J. Gautier, & G. Merckel. (1978). A high-voltage circuit for driving liquid-crystal displays. IEEE Journal of Solid-State Circuits. 13(3). 375–378. 7 indexed citations
17.
Sharma, Dinesh K., J. Gautier, & G. Merckel. (1977). A High Voltage SOS MOS Circuit. European Solid-State Circuits Conference. 174–175. 1 indexed citations
18.
Bareyre, P., P. Borgeaud, J. Poinsignon, et al.. (1976). A New Monolothic Integrated Circuit for Multiwire Proportional Chamber (MWPC) Read-Out System. IEEE Transactions on Nuclear Science. 23(1). 274–278. 2 indexed citations
19.
Gautier, J., Jean-Pierre Borel, & G. Merckel. (1975). Short channel MOSFET modeling. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations
20.
Borel, Jean-Pierre, et al.. (1972). An accurate two-dimensional numerical analysis of the MOS transistor. Solid-State Electronics. 15(5). 547–557. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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