F. J. Rueß

1.9k total citations
24 papers, 1.4k citations indexed

About

F. J. Rueß is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, F. J. Rueß has authored 24 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 7 papers in Biomedical Engineering. Recurrent topics in F. J. Rueß's work include Advancements in Semiconductor Devices and Circuit Design (10 papers), Surface and Thin Film Phenomena (10 papers) and Quantum and electron transport phenomena (9 papers). F. J. Rueß is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (10 papers), Surface and Thin Film Phenomena (10 papers) and Quantum and electron transport phenomena (9 papers). F. J. Rueß collaborates with scholars based in Australia, Switzerland and Germany. F. J. Rueß's co-authors include M. Y. Simmons, L. Oberbeck, Toby Hallam, Neil J. Curson, Robert G. Clark, Steven R. Schofield, Kuan Eng Johnson Goh, A. R. Hamilton, S. Baeßler and A. V. Strelkov and has published in prestigious journals such as Nature, Physical Review Letters and Nano Letters.

In The Last Decade

F. J. Rueß

24 papers receiving 1.3k citations

Peers

Countries citing papers authored by F. J. Rueß

Since Specialization

Citations

This map shows the geographic impact of F. J. Rueß's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. J. Rueß with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. J. Rueß more than expected).

Fields of papers citing papers by F. J. Rueß

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. J. Rueß. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. J. Rueß. The network helps show where F. J. Rueß may publish in the future.

Co-authorship network of co-authors of F. J. Rueß

This figure shows the co-authorship network connecting the top 25 collaborators of F. J. Rueß. A scholar is included among the top collaborators of F. J. Rueß based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. J. Rueß. F. J. Rueß is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	β-NMR Study of a buried Mn δ-doped layer in a silicon host 2014 ·Journal of Physics Conference Series ·David Cortie, (unknown), Ryan M. L. McFadden, (unknown), C. D. P. Levy, Martin H. Dehn, M. R. Pearson, G. D. Morris, S. R. Dunsiger, R. F. Kiefl, F. J. Rueß, Andreas Fuhrer, W. A. MacFarlane	1
2	Confinement and integration of magnetic impurities in silicon 2013 ·Applied Physics Letters ·F. J. Rueß, Mario El Kazzi, Lukas Czornomaz, Philipp Mensch, Marinus Hopstaken, Andreas Fuhrer	10
3	Atomic Structure of Mn Wires on Si(001) Resolved by Scanning Tunneling Microscopy 2012 ·Physical Review Letters ·Andreas Fuhrer, F. J. Rueß, Nikolaj Moll, (unknown), Daniel Widmer	8
4	Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures 2008 ·Applied Physics Letters ·F. J. Rueß, A. P. Micolich, (unknown), Kuan Eng Johnson Goh, A. R. Hamilton, M. Y. Simmons	12
5	Atomic-scale silicon device fabrication 2008 ·International Journal of Nanotechnology ·M. Y. Simmons, F. J. Rueß, Kuan Eng Johnson Goh, (unknown), Toby Hallam, M. J. Butcher, T. C. G. Reusch, Giordano Scappucci, A. R. Hamilton, L. Oberbeck	22
6	Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy–patterned devices 2007 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Martin Fuechsle, F. J. Rueß, T. C. G. Reusch, (unknown), M. Y. Simmons	18
7	One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy 2007 ·Physical Review B ·F. J. Rueß, Bent Weber, Kuan Eng Johnson Goh, O. Klochan, A. R. Hamilton, M. Y. Simmons	29
8	Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts 2007 ·Journal of Applied Physics ·Toby Hallam, M. J. Butcher, Kuan Eng Johnson Goh, F. J. Rueß, M. Y. Simmons	9
9	Comparison of GaP and PH₃ as dopant sources for STM-based device fabrication 2007 ·Nanotechnology ·Kuan Eng Johnson Goh, L. Oberbeck, M. J. Butcher, Neil J. Curson, F. J. Rueß, M. Y. Simmons	8
10	Realization of Atomically Controlled Dopant Devices in Silicon 2007 ·Small ·F. J. Rueß, (unknown), T. C. G. Reusch, M. J. Butcher, Kuan Eng Johnson Goh, L. Oberbeck, Giordano Scappucci, A. R. Hamilton, M. Y. Simmons	93
11	Atomically precise silicon device fabrication 2007 ·M. Y. Simmons, F. J. Rueß, (unknown), (unknown), (unknown), Giordano Scappucci, T. C. G. Reusch, Kuan Eng Johnson Goh, Steven R. Schofield, Bent Weber, L. Oberbeck, A. R. Hamilton, Fulvio Ratto	1
12	Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy 2006 ·Nanotechnology ·F. J. Rueß, Kuan Eng Johnson Goh, M. J. Butcher, T. C. G. Reusch, L. Oberbeck, Bent Weber, A. R. Hamilton, M. Y. Simmons	23
13	The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures 2005 ·Nanotechnology ·F. J. Rueß, L. Oberbeck, Kuan Eng Johnson Goh, M. J. Butcher, E. Gauja, A. R. Hamilton, M. Y. Simmons	23
14	Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy 2005 ·Applied Physics Letters ·Toby Hallam, F. J. Rueß, Neil J. Curson, Kuan Eng Johnson Goh, L. Oberbeck, M. Y. Simmons, Robert G. Clark	11
15	Scanning probe microscopy for silicon device fabrication 2005 ·Molecular Simulation ·M. Y. Simmons, F. J. Rueß, Kuan Eng Johnson Goh, Toby Hallam, Steven R. Schofield, L. Oberbeck, Neil J. Curson, A. R. Hamilton, M. J. Butcher, Robert G. Clark, T. C. G. Reusch	49
16	Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy 2004 ·Nano Letters ·F. J. Rueß, L. Oberbeck, M. Y. Simmons, Kuan Eng Johnson Goh, A. R. Hamilton, Toby Hallam, Steven R. Schofield, Neil J. Curson, Robert G. Clark	134
17	Atomically Precise Placement of Single Dopants in Si 2003 ·Physical Review Letters ·Steven R. Schofield, Neil J. Curson, M. Y. Simmons, F. J. Rueß, Toby Hallam, L. Oberbeck, Robert G. Clark	305
18	Quantum states of neutrons in the Earth's gravitational field 2002 ·Nature ·V. V. Nesvizhevsky, Hans G. Börner, A. K. Petukhov, H. Abele, S. Baeßler, F. J. Rueß, Thilo Stöferle, Alexander Westphal, A. M. Gagarski, G. A. Petrov, A. V. Strelkov	366
19	Competition Between Surface Barriers and Bulk Pinning in a Nd_2-xCe_xCuO_4-y Single Crystal down to T/T_c= 0.02 1998 ·APS March Meeting Abstracts ·M. C. de Andrade, N. R. Dilley, F. J. Rueß, (unknown)	1
20	Competition between surface barriers and bulk pinning in aNd2−xCexCuO4−ysingle crystal down toT/Tc=0.02 1998 ·Physical review. B, Condensed matter ·M. C. de Andrade, N. R. Dilley, F. J. Rueß, M. B. Maple	27

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact