E. Gauja

654 total citations
32 papers, 424 citations indexed

About

E. Gauja is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, E. Gauja has authored 32 papers receiving a total of 424 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in E. Gauja's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). E. Gauja is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). E. Gauja collaborates with scholars based in Australia, Pakistan and Ireland. E. Gauja's co-authors include Andrew S. Dzurak, David N. Jamieson, C. I. Pakes, Robert G. Clark, Steven Prawer, T. Hopf, S. E. Andresen, Fay E. Hudson, Chih Hwan Yang and Martin A. Green and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Thin Solid Films.

In The Last Decade

E. Gauja

30 papers receiving 413 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Gauja Australia 10 328 217 97 52 44 32 424
Ákos Nemcsics Hungary 11 236 0.7× 281 1.3× 165 1.7× 32 0.6× 24 0.5× 73 438
Consultants Bureau 5 156 0.5× 116 0.5× 109 1.1× 15 0.3× 15 0.3× 6 282
H. Umezaki Japan 7 94 0.3× 191 0.9× 54 0.6× 13 0.3× 4 0.1× 18 299
K. Sablon United States 10 318 1.0× 435 2.0× 286 2.9× 19 0.4× 3 0.1× 21 488
Kevin C. Miao United States 7 226 0.7× 199 0.9× 267 2.8× 19 0.4× 2 0.0× 7 428
J. Budin France 11 217 0.7× 110 0.5× 89 0.9× 55 1.1× 5 0.1× 29 348
A. Hojo Japan 10 305 0.9× 193 0.9× 37 0.4× 6 0.1× 6 0.1× 31 351
Yang Ji China 7 272 0.8× 482 2.2× 56 0.6× 9 0.2× 9 0.2× 26 516
H. E. Beere United Kingdom 7 209 0.6× 315 1.5× 145 1.5× 3 0.1× 9 0.2× 11 435
U. Auer Germany 11 423 1.3× 210 1.0× 24 0.2× 4 0.1× 32 0.7× 46 466

Countries citing papers authored by E. Gauja

Since Specialization
Citations

This map shows the geographic impact of E. Gauja's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Gauja with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Gauja more than expected).

Fields of papers citing papers by E. Gauja

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Gauja. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Gauja. The network helps show where E. Gauja may publish in the future.

Co-authorship network of co-authors of E. Gauja

This figure shows the co-authorship network connecting the top 25 collaborators of E. Gauja. A scholar is included among the top collaborators of E. Gauja based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Gauja. E. Gauja is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Johnson, Brett C., Jeffrey C. McCallum, L. H. Willems van Beveren, & E. Gauja. (2009). Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport. Thin Solid Films. 518(9). 2524–2527. 6 indexed citations
3.
Gentle, Angus, et al.. (2008). Characterisation of dielectric properties of PECVD Silicon Nitride for RF MEMS applications. 91–96. 10 indexed citations
4.
5.
Jamieson, David N., V. Chan, Fay E. Hudson, et al.. (2006). Quantum effects in ion implanted devices. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 249(1-2). 221–225. 3 indexed citations
6.
Rueß, F. J., L. Oberbeck, Kuan Eng Johnson Goh, et al.. (2005). The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures. Nanotechnology. 16(10). 2446–2449. 23 indexed citations
7.
Yang, Changyi, David N. Jamieson, T. Hopf, et al.. (2005). Optimization of single keV ion implantation for the construction of single P-donor devices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5650. 64–64. 2 indexed citations
8.
Jamieson, David N., Chih Hwan Yang, T. Hopf, et al.. (2005). Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions. Applied Physics Letters. 86(20). 157 indexed citations
9.
Jamieson, David N., C. I. Pakes, Steven Prawer, et al.. (2003). Single Phosphorus Ion Implantation into Prefabricated Nanometre Cells of Silicon Devices for Quantum Bit Fabrication. Japanese Journal of Applied Physics. 42(Part 1, No. 6B). 4124–4128. 14 indexed citations
10.
Lumpkin, N. E., E. Gauja, Victor Chan, et al.. (2002). Nanofabrication processes for single-ion implantation of silicon quantum computer devices. Smart Materials and Structures. 11(5). 735–740. 5 indexed citations
11.
12.
Dzurak, Andrew S., M. Y. Simmons, A. R. Hamilton, et al.. (2001). Construction of a silicon-based solid state quantum computer. Quantum Information and Computation. 1(4). 82–95. 2 indexed citations
13.
Gross, M., et al.. (1997). Fabrication of light-turning mirrors in buried-channel silica waveguides for monolithic and hybrid integration. Journal of Lightwave Technology. 15(1). 148–153. 9 indexed citations
14.
Sproul, A.B., et al.. (1995). Observation of Fano resonance in heavily dopedp-type silicon at room temperature. Physical review. B, Condensed matter. 52(8). 5672–5674. 18 indexed citations
15.
Kwok, Chee Yee, et al.. (1994). Effects of controlled texturization of the crystalline Si surface on the SiO/sub 2//Si effective barrier height. IEEE Electron Device Letters. 15(12). 513–515. 4 indexed citations
16.
Gauja, E., et al.. (1990). Tunable couplers fabricated in K + /Na + ion exchanged glass. Electronics Letters. 26(12). 786–788. 2 indexed citations
17.
Wenham, Stuart, et al.. (1982). Screen printed processing of solar cells incorporating integral bypass diodes. 938–942. 2 indexed citations
18.
Green, Martin A., et al.. (1982). Towards a 700 mV silicon solar cell. ANU Open Research (Australian National University). 1219–1222. 5 indexed citations
19.
Blakers, Andrew, et al.. (1981). The MINP solar cell - A new high voltage, high efficiency silicon solar cell. ANU Open Research (Australian National University). 1405–1408. 9 indexed citations
20.
Green, Martin A., et al.. (1981). Silicon solar cells with integral bypass diodes. Solar Cells. 3(3). 233–244. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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