F. J. Feigl

2.0k citations

36 papers · 1.6k indexed · 1 hit paper · h-index 18

Impact in

Ceramics and Composites top 2%
- Glass properties and applications
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies

Papers in

Ceramics and Composites 7
- Glass properties and applications 7
Electrical and Electronic Engineering 29
- Semiconductor materials and devices 27
- Thin-Film Transistor Technologies 10
- Advanced Memory and Neural Computing 3

Co-authors: W. Beall Fowler Kwok L. Yip Donald R. Young D. J. DiMaria S. R. Butler John H. Anderson J. A. Calise Sz‐Nian Lai
Journals: Journal of Applied Physics (8 papers)Journal of Physics and Chemistry of Solids (5 papers)Journal of The Electrochemical Society (5 papers)Applied Physics Letters (3 papers)Journal of Electronic Materials (2 papers)
Partner nations: United States Canada

In The Last Decade

F. J. Feigl

36 papers receiving 1.5k citations

Hit Papers

align trajectories log scale

Oxygen vacancy model for the E1′ center in SiO2 1974 · 439 citations

Peers

Countries citing papers authored by F. J. Feigl

Since Specialization

Citations

This map shows the geographic impact of F. J. Feigl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. J. Feigl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. J. Feigl more than expected).

Fields of papers citing papers by F. J. Feigl

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. J. Feigl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. J. Feigl. The network helps show where F. J. Feigl may publish in the future.

Co-authors

The 25 scholars most cited alongside F. J. Feigl, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. J. Feigl Line = papers co-authored together F. J. Feigl links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Positive charge generation in metal-oxide-semiconductor capacitors Journal of Applied Physics ·L. Trombetta, F. J. Feigl, Robert J. Zeto	1991	99
2	Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling Physical review. B, Condensed matter ·W. Beall Fowler, Jayanta K. Rudra, M. E. Zvanut, F. J. Feigl	1990	72
3	Optical absorption and electron paramagnetic resonance studies of chemically reduced congruent lithium niobate Journal of Physics and Chemistry of Solids ·Kirk Serpes, F. J. Feigl, Gary G. DeLeo	1990	36
4	Rechargeable E′ centers in sputter-deposited silicon dioxide films Applied Physics Letters ·M. E. Zvanut, F. J. Feigl, W. Beall Fowler, Jayanta K. Rudra, P. J. Caplan, Edward H. Poindexter, J. D. Zook	1989	49
5	VLSI Technology and Dielectric Film Science Physics Today ·F. J. Feigl	1986	9
6	The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients Journal of The Electrochemical Society ·Fariba Safaei, S. R. Butler, F. J. Feigl, C. W. Magee	1986	1
7	ChemInform Abstract: Electrical Properties of Silicon Dioxide Films Fabricated at 700 ° C. Chemischer Informationsdienst ·L. Trombetta, Robert J. Zeto, F. J. Feigl, M. E. Zvanut	1986	1
8	Model for theE2′Center in Alpha Quartz Physical Review Letters ·Jayanta K. Rudra, W. Beall Fowler, F. J. Feigl	1985	47
9	Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition Journal of Electronic Materials ·M. E. Zvanut, F. J. Feigl, S. R. Butler, Verônica Mata	1985	7
10	Electrical properties of silicon dioxide films fabricated at 700°C. I: Pyroltsis of tetraethoxysilane Journal of Electronic Materials ·R. Vogel, S. R. Butler, F. J. Feigl	1985	11
11	Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F. J. Feigl, Richard Gale, Huck Beng Chew, C. W. Magee, Donald R. Young	1984	17
12	The effects of water on oxide and interface trapped charge generation in thermal SiO2 films Journal of Applied Physics ·F. J. Feigl, Donald R. Young, D. J. DiMaria, Sz‐Nian Lai, J. A. Calise	1981	172
13	Chlorine Incorporation in HCl Oxides Journal of The Electrochemical Society ·A. Rohatgi, S. R. Butler, F. J. Feigl, H.W. Kraner, Keith Jones	1979	16
14	Energy and spatial distribution of an electron trapping center in the MOS insulator Journal of Applied Physics ·Vikram Kapoor, F. J. Feigl, S. R. Butler	1977	28
15	Trap ionization by electron impact in amorphous SiO2 films Applied Physics Letters ·D. J. DiMaria, F. J. Feigl, S. R. Butler	1974	23
16	Photocurent spectroscopy in thin-film insulators: Voltage dependence of the external-circuit current Physical review. B, Solid state ·D. J. DiMaria, F. J. Feigl	1974	21
17	Defects in Crystalline Quartz: Electron Paramagnetic Resonance of Multiple-Alkali-Compensated Centers Associated with Germanium Impurities Physical review. B, Solid state ·F. Vinet, F. J. Feigl	1973	5
18	Electron trapping levels in silicon dioxide thermally grown on silicon Journal of Physics and Chemistry of Solids ·J. H. Thomas, F. J. Feigl	1972	36
19	Spectrally resolved photo depopulation of electron trapping defects in amorphous silica films Solid State Communications ·J. H. Thomas, F. J. Feigl	1970	16
20	Paramagnetic resonance in dilute chromium-iron alloys Journal of Physics and Chemistry of Solids ·M. B. Salamon, F. J. Feigl	1968	8

About F. J. Feigl

F. J. Feigl is a scholar working on Ceramics and Composites, Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics and Bioengineering, having authored 36 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (27 papers), Silicon Nanostructures and Photoluminescence (12 papers), Thin-Film Transistor Technologies (10 papers), Semiconductor materials and interfaces (7 papers), Glass properties and applications (7 papers), Electronic and Structural Properties of Oxides (4 papers), Ion-surface interactions and analysis (3 papers) and Advanced Memory and Neural Computing (3 papers). The work is most often cited by research in Ceramics and Composites (356 citations), Electrical and Electronic Engineering (1.2k citations), Materials Chemistry (741 citations), Surfaces, Coatings and Films (83 citations) and Atomic and Molecular Physics, and Optics (303 citations). F. J. Feigl has collaborated with scholars based in United States and Canada. Frequent co-authors include W. Beall Fowler, Kwok L. Yip, Donald R. Young, D. J. DiMaria, S. R. Butler, John H. Anderson, J. A. Calise, Sz‐Nian Lai, Jayanta K. Rudra and Robert J. Zeto. Their work appears in journals such as Journal of Applied Physics, Journal of Physics and Chemistry of Solids, Journal of The Electrochemical Society, Applied Physics Letters and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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