F. Coccetti

9.9k total citations
16 papers, 205 citations indexed

About

F. Coccetti is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Coccetti has authored 16 papers receiving a total of 205 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in F. Coccetti's work include Silicon Carbide Semiconductor Technologies (4 papers), Semiconductor materials and devices (4 papers) and GaN-based semiconductor devices and materials (3 papers). F. Coccetti is often cited by papers focused on Silicon Carbide Semiconductor Technologies (4 papers), Semiconductor materials and devices (4 papers) and GaN-based semiconductor devices and materials (3 papers). F. Coccetti collaborates with scholars based in France, Italy and Greece. F. Coccetti's co-authors include G. Papaioannou, R. Plana, R.L.A. Cottrell, P. Pons, Cheng Jin, Wu-chun Feng, S. Ravot, M. Koutsoureli, H. B. Newman and Olivier J. F. Martin and has published in prestigious journals such as Physica A Statistical Mechanics and its Applications, IEEE Transactions on Nuclear Science and Optical Materials.

In The Last Decade

F. Coccetti

14 papers receiving 199 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Coccetti France 9 113 53 44 42 28 16 205
Takashi Ishigaki Japan 13 505 4.5× 50 0.9× 98 2.2× 14 0.3× 5 0.2× 32 560
Yanbin Luo United States 10 317 2.8× 20 0.4× 66 1.5× 17 0.4× 4 0.1× 28 347
M. Lorenzini Belgium 10 264 2.3× 42 0.8× 32 0.7× 36 0.9× 34 305
Can Cui United States 11 194 1.7× 10 0.2× 122 2.8× 34 0.8× 1 0.0× 29 323
Renichi Yamada Japan 11 376 3.3× 17 0.3× 71 1.6× 28 0.7× 2 0.1× 32 406
H. Iizuka Japan 11 327 2.9× 22 0.4× 58 1.3× 42 1.0× 2 0.1× 27 343
Che-Yu Liu United States 10 154 1.4× 59 1.1× 24 0.5× 33 0.8× 1 0.0× 36 252
J.M. Higman United States 12 356 3.2× 22 0.4× 100 2.3× 37 0.9× 35 387
T. Maffitt United States 7 187 1.7× 33 0.6× 185 4.2× 34 0.8× 9 260
K. Nagel Canada 7 190 1.7× 33 0.6× 172 3.9× 32 0.8× 1 0.0× 11 256

Countries citing papers authored by F. Coccetti

Since Specialization
Citations

This map shows the geographic impact of F. Coccetti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Coccetti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Coccetti more than expected).

Fields of papers citing papers by F. Coccetti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Coccetti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Coccetti. The network helps show where F. Coccetti may publish in the future.

Co-authorship network of co-authors of F. Coccetti

This figure shows the co-authorship network connecting the top 25 collaborators of F. Coccetti. A scholar is included among the top collaborators of F. Coccetti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Coccetti. F. Coccetti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Alam, Md. Shahidul, et al.. (2025). Gate lifetime investigation at low temperature for p-GaN HEMT. Microelectronics Reliability. 168. 115658–115658.
2.
Lefebvre, Sébastien, et al.. (2025). Dependence between drain current saturation level and short-circuit robustness of p-GaN HEMTs. Microelectronics Reliability. 171. 115794–115794.
3.
Trémouilles, David, et al.. (2023). New reliability model for power SiC MOSFET technologies under static and dynamic gate stress. Microelectronics Reliability. 150. 115190–115190. 2 indexed citations
4.
Pouget, V., et al.. (2021). Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs. IEEE Transactions on Nuclear Science. 68(8). 1642–1650. 17 indexed citations
5.
Pouget, V., et al.. (2021). Modelling of charge injection by multi-photon absorption in GaN-on-Si HEMTs for SEE testing. Microelectronics Reliability. 126. 114339–114339. 5 indexed citations
6.
7.
Żur, Lidia, Cristina Armellini, E. Cattaruzza, et al.. (2018). Comparison between glass and glass-ceramic silica-hafnia matrices on the down-conversion efficiency of Tb3+/Yb3+ rare earth ions. Optical Materials. 87. 102–106. 21 indexed citations
8.
Enrichi, Francesco, A. Benedetti, E. Cattaruzza, et al.. (2018). Ag nanoaggregates as efficient broadband sensitizers for Tb3+ ions in silica-zirconia ion-exchanged sol-gel glasses and glass-ceramics. Optical Materials. 84. 668–674. 14 indexed citations
9.
Righini, Giancarlo C., F. Coccetti, Francesco Enrichi, et al.. (2017). Light management in solar cells: Recent advances. 1–6. 6 indexed citations
10.
Zaghloul, Usama, M. Koutsoureli, F. Coccetti, et al.. (2010). Assessment of dielectric charging in electrostatically driven MEMS devices: A comparison of available characterization techniques. Microelectronics Reliability. 50(9-11). 1615–1620. 26 indexed citations
11.
Ruan, Jiangjun, G. Papaioannou, Nicolas Nolhier, et al.. (2008). ESD failure signature in capacitive RF MEMS switches. Microelectronics Reliability. 48(8-9). 1237–1240. 20 indexed citations
12.
Ruan, Jiangjun, E. Papandreou, M. Koutsoureli, et al.. (2008). Alpha particle radiation effects in RF MEMS capacitive switches. Microelectronics Reliability. 48(8-9). 1241–1244. 9 indexed citations
13.
Coccetti, F., et al.. (2006). Exact results for the roughness of a finite size random walk. Physica A Statistical Mechanics and its Applications. 370(1). 127–131. 3 indexed citations
14.
Coccetti, F., et al.. (2006). Hidden forces and fluctuations from moving averages: A test study. Physica A Statistical Mechanics and its Applications. 370(1). 30–37. 15 indexed citations
15.
Caldarelli, Guido, F. Coccetti, & Paolo De Los Rios. (2004). Preferential exchange: Strengthening connections in complex networks. Physical Review E. 70(2). 27102–27102. 10 indexed citations
16.
Feng, Wu-chun, H. B. Newman, S. Ravot, et al.. (2003). Optimizing 10-Gigabit Ethernet for Networks of Workstations, Clusters, and Grids. 50–50. 51 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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