W.H. Laflère

1.8k total citations · 1 hit paper
46 papers, 1.7k citations indexed

About

W.H. Laflère is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, W.H. Laflère has authored 46 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Atomic and Molecular Physics, and Optics, 39 papers in Electrical and Electronic Engineering and 11 papers in Materials Chemistry. Recurrent topics in W.H. Laflère's work include Semiconductor materials and interfaces (37 papers), Semiconductor materials and devices (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). W.H. Laflère is often cited by papers focused on Semiconductor materials and interfaces (37 papers), Semiconductor materials and devices (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). W.H. Laflère collaborates with scholars based in Belgium and Switzerland. W.H. Laflère's co-authors include F. Cardon, R.L. Van Meirhaeghe, Dirk Poelman, W. P. Gomes, Michel Depas, L. Fiermans, Peter Hanselaer, Veerle De Bosscher, Yumin Li and Kristiaan Neyts and has published in prestigious journals such as Journal of Applied Physics, Surface Science and Journal of Physics D Applied Physics.

In The Last Decade

W.H. Laflère

46 papers receiving 1.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

1986 533 citations R.L. Van Meirhaeghe, W.H. Laflère et al. Solid-State Electronics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W.H. Laflère Belgium	17	1.4k	1.2k	537	138	87	46	1.7k
J. Joseph France	17	862 0.6×	393 0.3×	548 1.0×	174 1.3×	94 1.1×	43	1.1k
J.-M. Themlin France	19	916 0.7×	555 0.5×	1.5k 2.7×	361 2.6×	152 1.7×	48	1.9k
Christian Loppacher France	23	852 0.6×	1.2k 1.0×	481 0.9×	637 4.6×	66 0.8×	45	1.6k
C. Wigren Sweden	18	530 0.4×	640 0.5×	496 0.9×	184 1.3×	75 0.9×	31	1.1k
S.P. Wilks United Kingdom	19	730 0.5×	333 0.3×	508 0.9×	234 1.7×	131 1.5×	94	1.0k
T. Y. B. Leung United States	10	866 0.6×	313 0.3×	694 1.3×	225 1.6×	107 1.2×	16	1.1k
Toshihisa Horiuchi Japan	22	585 0.4×	538 0.4×	625 1.2×	685 5.0×	127 1.5×	86	1.4k
L. Bideux France	16	867 0.6×	555 0.5×	320 0.6×	212 1.5×	85 1.0×	85	1.1k
Rei Hobara Japan	23	439 0.3×	1.1k 0.9×	627 1.2×	292 2.1×	114 1.3×	55	1.6k
V. V. Afanas’ev Belgium	16	1.3k 0.9×	509 0.4×	861 1.6×	99 0.7×	147 1.7×	48	1.6k

Countries citing papers authored by W.H. Laflère

Since Specialization

Citations

This map shows the geographic impact of W.H. Laflère's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.H. Laflère with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.H. Laflère more than expected).

Fields of papers citing papers by W.H. Laflère

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.H. Laflère. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.H. Laflère. The network helps show where W.H. Laflère may publish in the future.

Co-authorship network of co-authors of W.H. Laflère

This figure shows the co-authorship network connecting the top 25 collaborators of W.H. Laflère. A scholar is included among the top collaborators of W.H. Laflère based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.H. Laflère. W.H. Laflère is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Poelman, Dirk, et al.. (1995). An XPS study of the dopants' valence states and the composition of CaS1 − xSex:Eu and SrS1 − xSex:Ce thin film electroluminescent devices. Journal of Luminescence. 63(1-2). 19–30. 69 indexed citations

Depas, Michel, R.L. Van Meirhaeghe, W.H. Laflère, & F. Cardon. (1994). Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation. Solid-State Electronics. 37(3). 433–441. 122 indexed citations

Meirhaeghe, R.L. Van, W.H. Laflère, & F. Cardon. (1994). Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts. Journal of Applied Physics. 76(1). 403–406. 136 indexed citations

Neyts, Kristiaan, Patrick De Visschere, Herman Pauwels, et al.. (1994). XPS study of TbF3 and TbOF centres in ZnS. physica status solidi (a). 146(2). K67–K70. 13 indexed citations

Meirhaeghe, R.L. Van, et al.. (1993). On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n-GaAs contacts. Journal of Applied Physics. 74(3). 1885–1889. 53 indexed citations

Poelman, Dirk, et al.. (1993). Effect of Moisture on Performance of SrS:Ce Thin Film Electroluminescent Devices. Japanese Journal of Applied Physics. 32(8R). 3477–3477. 9 indexed citations

Depas, Michel, R.L. Van Meirhaeghe, W.H. Laflère, & F. Cardon. (1992). A quantitative analysis of capacitance peaks in the impedance of Al/SiO_x/p-Si tunnel diodes. Semiconductor Science and Technology. 7(12). 1476–1483. 34 indexed citations

Poelman, Dirk, R.L. Van Meirhaeghe, W.H. Laflère, & F. Cardon. (1992). The influence of Se co-evaporation on the electroluminescent properties of SrS:Ce thin films. Journal of Luminescence. 52(5-6). 259–264. 14 indexed citations

Bosscher, Veerle De, R.L. Van Meirhaeghe, W.H. Laflère, & F. Cardon. (1991). Titanium silicide/p-Si Schottky barriers formed by rapid thermal processing in nitrogen. Solid-State Electronics. 34(8). 827–834. 3 indexed citations

10.

Meirhaeghe, R.L. Van, et al.. (1991). An investigation on the influence of Si surface pre-treatment on the frequency dependence of the impedence of Co/n-Si Schottky barriers. Semiconductor Science and Technology. 6(7). 653–658. 2 indexed citations

11.

Meirhaeghe, R.L. Van, et al.. (1991). On the relationship between the surface composition of the substrate and the Schottky barrier height in Au/n-CdTe contacts. Journal of Applied Physics. 70(4). 2200–2203. 25 indexed citations

12.

Meirhaeghe, R.L. Van, et al.. (1990). Characterisation of CoSi₂/- and TiSi₂/n-GaAs Schottky barriers. Semiconductor Science and Technology. 5(1). 60–64. 22 indexed citations

13.

Meirhaeghe, R.L. Van, et al.. (1990). On the influence of the surface pretreatment of a Si substrate on cobalt silicide formation. Semiconductor Science and Technology. 5(7). 745–751. 6 indexed citations

14.

Hanselaer, Peter, et al.. (1987). On the temperature dependence of the Mott–Schottky characteristics of high-barrier Ti–p-Si metal-insulator-semiconductor diodes. Journal of Applied Physics. 61(6). 2277–2281. 1 indexed citations

15.

Meirhaeghe, R.L. Van, et al.. (1987). Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers. Semiconductor Science and Technology. 2(5). 293–298. 44 indexed citations

16.

Hanselaer, Peter, R.L. Van Meirhaeghe, W.H. Laflère, & F. Cardon. (1987). Large barrier tunnel metal-insulator-semiconductor structures. Semiconductor Science and Technology. 2(2). 94–101. 4 indexed citations

17.

Meirhaeghe, R.L. Van, W.H. Laflère, & F. Cardon. (1983). On interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriers. Solid-State Electronics. 26(12). 1189–1192. 12 indexed citations

18.

Meirhaeghe, R.L. Van, W.H. Laflère, Yumin Li, & F. Cardon. (1981). Investigation of interface states in MIS-type Al-, Au- and Sn-GaAs Schottky barriers with a thin interfacial oxide layer. Journal of Physics D Applied Physics. 14(8). 1505–1512. 6 indexed citations

19.

Laflère, W.H., R.L. Van Meirhaeghe, F. Cardon, & W. P. Gomes. (1978). On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal schottky barriers. Surface Science. 74(1). 125–140. 11 indexed citations

20.

Laflère, W.H., F. Cardon, & W. P. Gomes. (1974). On the differential capacitance of the n- and p-type gallium arsenide electrode. Surface Science. 44(2). 541–552. 45 indexed citations

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