E. Gat

836 total citations
24 papers, 733 citations indexed

About

E. Gat is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, E. Gat has authored 24 papers receiving a total of 733 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 9 papers in Mechanics of Materials. Recurrent topics in E. Gat's work include Thin-Film Transistor Technologies (11 papers), Diamond and Carbon-based Materials Research (11 papers) and Metal and Thin Film Mechanics (8 papers). E. Gat is often cited by papers focused on Thin-Film Transistor Technologies (11 papers), Diamond and Carbon-based Materials Research (11 papers) and Metal and Thin Film Mechanics (8 papers). E. Gat collaborates with scholars based in France, Canada and Türkiye. E. Gat's co-authors include A. Ricard, Nicolas Ghérardi, Mohamed Chaker, My Alı El Khakani, B. Cros, H. Pépin, S. C. Gujrathi, F. Rousseaux, J. C. Kieffer and A. Jean and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemical Physics Letters.

In The Last Decade

E. Gat

24 papers receiving 704 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Gat France 12 562 312 273 160 66 24 733
A. Belkind United States 14 480 0.9× 304 1.0× 92 0.3× 324 2.0× 59 0.9× 51 660
Shoji Den Japan 14 295 0.5× 263 0.8× 89 0.3× 95 0.6× 20 0.3× 30 488
E. Räuchle Germany 12 327 0.6× 123 0.4× 63 0.2× 83 0.5× 85 1.3× 31 470
R. Etemadi France 12 265 0.5× 244 0.8× 53 0.2× 60 0.4× 24 0.4× 19 456
Richard Clergereaux France 12 300 0.5× 152 0.5× 61 0.2× 63 0.4× 63 1.0× 46 451
P. J. Matsuo United States 13 598 1.1× 226 0.7× 59 0.2× 272 1.7× 32 0.5× 14 686
K. Furuya Japan 11 305 0.5× 251 0.8× 30 0.1× 193 1.2× 56 0.8× 32 612
Kungen Teii Japan 20 481 0.9× 1.0k 3.2× 116 0.4× 503 3.1× 26 0.4× 91 1.2k
Alex V. Vasenkov United States 11 290 0.5× 227 0.7× 65 0.2× 182 1.1× 7 0.1× 18 566
Rodica Vlădoiu Romania 12 147 0.3× 258 0.8× 44 0.2× 206 1.3× 19 0.3× 65 420

Countries citing papers authored by E. Gat

Since Specialization
Citations

This map shows the geographic impact of E. Gat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Gat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Gat more than expected).

Fields of papers citing papers by E. Gat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Gat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Gat. The network helps show where E. Gat may publish in the future.

Co-authorship network of co-authors of E. Gat

This figure shows the co-authorship network connecting the top 25 collaborators of E. Gat. A scholar is included among the top collaborators of E. Gat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Gat. E. Gat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hüsem, Metin, et al.. (2012). FRACTURE OF CONNECTIONS BETWEEN STEEL AND REINFORCED CONCRETE SHEAR WALLS UNDER THE CYCLIC LOADING. 36(1). 97–102. 3 indexed citations
2.
Dugne, O., et al.. (2001). Study of surface modification of uranium and UFe2 by various surface analysis techniques. Journal of Nuclear Materials. 294(3). 305–314. 4 indexed citations
3.
Ghérardi, Nicolas, et al.. (2000). Transition from glow silent discharge to micro-discharges in nitrogen gas. Plasma Sources Science and Technology. 9(3). 340–346. 266 indexed citations
4.
Gat, E., et al.. (1999). Quenching rates of N2(C,v′) vibrational states in N2 and He glow silent discharges. Chemical Physics Letters. 306(5-6). 263–268. 30 indexed citations
5.
Tabbal, M., Philippe Mérel, S. Moisa, et al.. (1998). XPS and FTIR analysis of nitrogen incorporation in CNx thin films. Surface and Coatings Technology. 98(1-3). 1092–1096. 47 indexed citations
6.
Gat, E., et al.. (1996). Temperature effects on tungsten etching. Microelectronic Engineering. 30(1-4). 337–340. 6 indexed citations
7.
Khakani, My Alı El, Mohamed Chaker, & E. Gat. (1996). Pulsed laser deposition of highly conductive iridium oxide thin films. Applied Physics Letters. 69(14). 2027–2029. 53 indexed citations
8.
Khakani, My Alı El, et al.. (1995). Deposition of silicon carbide thin films by pulsed excimer laser ablation technique in the 25-700°C deposition temperature range. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2403. 153–153. 4 indexed citations
9.
Gat, E., et al.. (1995). Highly anisotropic etching of submicrometer features on tungsten. Journal of Applied Physics. 78(11). 6780–6783. 12 indexed citations
10.
Huai, Yiming, J. N. Broughton, E. Gat, et al.. (1994). Pulsed-Laser Deposition and Characterization of Amorphous Diamondlike Carbon Films. MRS Proceedings. 349. 2 indexed citations
11.
Huai, Yiming, M. Chaker, J. N. Broughton, et al.. (1994). Study of density in pulsed-laser deposited amorphous carbon films using x-ray reflectivity. Applied Physics Letters. 65(7). 830–832. 40 indexed citations
12.
Cros, B., et al.. (1993). Matériaux céramiques déposés en couches minces par plasma CVD. Journal de Physique III. 3(4). 729–744. 2 indexed citations
13.
Jean, A., My Alı El Khakani, Mohamed Chaker, et al.. (1993). Biaxial Young’s modulus of silicon carbide thin films. Applied Physics Letters. 62(18). 2200–2202. 6 indexed citations
14.
Gat, E., B. Cros, R. Berjoan, & J. Durand. (1993). AES microstructural investigations of low-temperature, low-frequency plasma-deposited a-SixC1−x:H films. Applied Surface Science. 64(4). 345–351. 8 indexed citations
15.
Jean, A., My Alı El Khakani, Mohamed Chaker, et al.. (1992). Mechanical properties of silicon carbide films for X-ray lithography application. Canadian Journal of Physics. 70(10-11). 834–837. 1 indexed citations
16.
Gat, E., My Alı El Khakani, Mohamed Chaker, et al.. (1992). A study of the effect of composition on the microstructural evolution of a–SixC1−x: H PECVD films: IR absorption and XPS characterizations. Journal of materials research/Pratt's guide to venture capital sources. 7(9). 2478–2487. 77 indexed citations
17.
Haghiri‐Gosnet, Anne‐Marie, F. Rousseaux, E. Gat, J. Durand, & A.-M. Flank. (1992). Structural properties of amorphous SiC films and x-ray membranes by EXAFS. Microelectronic Engineering. 17(1-4). 215–218. 10 indexed citations
18.
Gat, E., B. Cros, R. Berjoan, & J. Durand. (1992). LOW FREQUENCY GLOW DISCHARGE HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS. Materials and Manufacturing Processes. 7(3). 345–361. 5 indexed citations
19.
Chaker, M., S. Boily, My Alı El Khakani, et al.. (1992). X-ray mask development based on SiC membrane and W absorber. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(6). 3191–3195. 21 indexed citations
20.
Cros, B., E. Gat, R. Berjoan, Michel Viguier, & J. Durand. (1992). Tensiometry and Auger electron spectroscopy studies of the surface of plasma-deposited silicon carbide coatings. Thin Solid Films. 216(2). 244–248. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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