E. Gat

836 citations

24 papers · 733 indexed · h-index 12

Impact in

Radiology, Nuclear Medicine and Imaging top 5%
- Plasma Applications and Diagnostics
Electrical and Electronic Engineering top 10%
- Plasma Diagnostics and Applications
- Electrohydrodynamics and Fluid Dynamics
- Semiconductor materials and devices
- Thin-Film Transistor Technologies

Papers in ⓘ

Mechanics of Materials 9
- Metal and Thin Film Mechanics 8
- Laser-induced spectroscopy and plasma 2
Electrical and Electronic Engineering 20
- Thin-Film Transistor Technologies 11
- Semiconductor materials and devices 7
- Plasma Diagnostics and Applications 5

Co-authors: A. Ricard (3 shared papers)Nicolas Ghérardi (2 shared papers)Mohamed Chaker (11 shared papers)My Alı El Khakani (7 shared papers)B. Cros (6 shared papers)H. Pépin (8 shared papers)S. C. Gujrathi (4 shared papers)A. Jean (5 shared papers)
Journals: Applied Physics Letters (3 papers)Journal of Applied Physics (3 papers)Microelectronic Engineering (2 papers)Applied Surface Science (1 paper)Journal of materials research/Pratt's guide to venture capital sources (1 paper)
Partner nations: France Canada Türkiye

In The Last Decade

E. Gat

24 papers receiving 704 citations

Peers

Countries citing papers authored by E. Gat

Since Specialization

Citations

This map shows the geographic impact of E. Gat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Gat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Gat more than expected).

Fields of papers citing papers by E. Gat

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Gat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Gat. The network helps show where E. Gat may publish in the future.

Co-authors

The 25 scholars most cited alongside E. Gat, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Gat Line = papers co-authored together E. Gat links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 24 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Transition from glow silent discharge to micro-discharges in nitrogen gas Plasma Sources Science and Technology ·Nicolas Ghérardi, G. Gouda, E. Gat, A. Ricard, François Massines	2000	266
2	A study of the effect of composition on the microstructural evolution of a–Si_xC₁−_x: H PECVD films: IR absorption and XPS characterizations Journal of materials research/Pratt's guide to venture capital sources ·E. Gat, My Alı El Khakani, Mohamed Chaker, A. Jean, S. Boily, H. Pépin, J. C. Kieffer, J. Durand, B. Cros, F. Rousseaux, S. C. Gujrathi	1992	77
3	Pulsed laser deposition of highly conductive iridium oxide thin films Applied Physics Letters ·My Alı El Khakani, Mohamed Chaker, E. Gat	1996	53
4	XPS and FTIR analysis of nitrogen incorporation in CNx thin films Surface and Coatings Technology ·M. Tabbal, Philippe Mérel, S. Moisa, Mohamed Chaker, E. Gat, A. Ricard, Michel Moisan, S. C. Gujrathi	1998	47
5	Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application Journal of Applied Physics ·A. Jean, Mohamed Chaker, Y. Diawara, Puiki Leung, E. Gat, P. P. Mercier, H. Pépin, S. C. Gujrathi, G.G. Ross, J. C. Kieffer	1992	44
6	Study of density in pulsed-laser deposited amorphous carbon films using x-ray reflectivity Applied Physics Letters ·Yiming Huai, M. Chaker, J. N. Broughton, E. Gat, H. Pépin, T. Gu, X. Bian, Mark Sutton	1994	40
7	Characterization of the elastic properties of amorphous silicon carbide thin films by acoustic microscopy Journal of Non-Crystalline Solids ·B. Cros, E. Gat, J Saurel	1997	37
8	A 100-nm patterned x-ray mask technology based on amorphous SiC membranes Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Anne‐Marie Haghiri‐Gosnet, F. Rousseaux, Brahim Kebabi, F. R. Ladan, Charly Mayeux, Ali Madouri, D. Decanini, J. Bourneix, F. Carcenac, H. Launois, B. Wiśniewski, E. Gat, Jean‐Olivier Durand	1990	36
9	Quenching rates of N2(C,v′) vibrational states in N2 and He glow silent discharges Chemical Physics Letters ·E. Gat, Nicolas Ghérardi, S. Lemoing, F. Massines, A. Ricard	1999	30
10	X-ray mask development based on SiC membrane and W absorber Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Chaker, S. Boily, Y. Diawara, My Alı El Khakani, E. Gat, A. Jean, H. Lafontaine, H. Pépin, Joël Voyer, J. C. Kieffer, Anne‐Marie Haghiri‐Gosnet, F. R. Ladan, M. F. Ravet, Y. Chen, F. Rousseaux	1992	21
11	Etching characteristics of thin films of tungsten, amorphous silicon carbide, and SAL-603 resist submitted to a surface-wave driven SF6 magnetoplasma near electron cyclotron resonance conditions Journal of Applied Physics ·F. Bounasri, Michel Moisan, L. St-Onge, J. Margot, Mohamed Chaker, Jacques Pelletier, My Alı El Khakani, E. Gat	1995	16
12	Highly anisotropic etching of submicrometer features on tungsten Journal of Applied Physics ·F. Bounasri, E. Gat, Mohamed Chaker, Michel Moisan, J. Margot, M. F. Ravet	1995	12
13	Structural properties of amorphous SiC films and x-ray membranes by EXAFS Microelectronic Engineering ·Anne‐Marie Haghiri‐Gosnet, F. Rousseaux, E. Gat, J. Durand, A.-M. Flank	1992	10
14	AES microstructural investigations of low-temperature, low-frequency plasma-deposited a-SixC1−x:H films Applied Surface Science ·E. Gat, B. Cros, R. Berjoan, J. Durand	1993	8
15	Biaxial Young’s modulus of silicon carbide thin films Applied Physics Letters ·A. Jean, My Alı El Khakani, Mohamed Chaker, S. Boily, E. Gat, J. C. Kieffer, H. Pépin, M. F. Ravet, F. Rousseaux	1993	6
16	Temperature effects on tungsten etching Microelectronic Engineering ·E. Gat, F. Bounasri, Mohamed Chaker, M. F. Ravet, Michel Moisan, J. Margot	1996	6
17	LOW FREQUENCY GLOW DISCHARGE HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS Materials and Manufacturing Processes ·E. Gat, B. Cros, R. Berjoan, J. Durand	1992	5
18	Deposition of silicon carbide thin films by pulsed excimer laser ablation technique in the 25-700°C deposition temperature range Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·My Alı El Khakani, E. Gat, Yves Beaudoin, Mohamed Chaker, C. Monteil, Daniel Guay, G. Letourneau, H. Pépin	1995	4
19	Study of surface modification of uranium and UFe2 by various surface analysis techniques Journal of Nuclear Materials ·Olivier Bonino, O. Dugne, Claude Merlet, E. Gat, P. Holliger, M. Lahaye	2001	4
20	Tensiometry and Auger electron spectroscopy studies of the surface of plasma-deposited silicon carbide coatings Thin Solid Films ·B. Cros, E. Gat, R. Berjoan, Michel Viguier, J. Durand	1992	3

About E. Gat

E. Gat is a scholar working on Mechanics of Materials, Electrical and Electronic Engineering, Materials Chemistry, Computational Mechanics and Surfaces, Coatings and Films, having authored 24 papers that have together received 733 indexed citations. Recurring topics across this work include Diamond and Carbon-based Materials Research (11 papers), Thin-Film Transistor Technologies (11 papers), Metal and Thin Film Mechanics (8 papers), Semiconductor materials and devices (7 papers), Plasma Diagnostics and Applications (5 papers), Ion-surface interactions and analysis (3 papers), ZnO doping and properties (3 papers) and Laser-induced spectroscopy and plasma (2 papers). The work is most often cited by research in Radiology, Nuclear Medicine and Imaging (273 citations), Electrical and Electronic Engineering (562 citations), Surfaces, Coatings and Films (66 citations), Materials Chemistry (312 citations) and Mechanics of Materials (160 citations). E. Gat has collaborated with scholars based in France, Canada and Türkiye. Frequent co-authors include A. Ricard, Nicolas Ghérardi, Mohamed Chaker, My Alı El Khakani, B. Cros, H. Pépin, S. C. Gujrathi, A. Jean, J. C. Kieffer and F. Rousseaux. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Microelectronic Engineering, Applied Surface Science and Journal of materials research/Pratt's guide to venture capital sources.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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