A. Jean

581 total citations
21 papers, 496 citations indexed

About

A. Jean is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Jean has authored 21 papers receiving a total of 496 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Jean's work include Thin-Film Transistor Technologies (8 papers), Diamond and Carbon-based Materials Research (7 papers) and Semiconductor Quantum Structures and Devices (7 papers). A. Jean is often cited by papers focused on Thin-Film Transistor Technologies (8 papers), Diamond and Carbon-based Materials Research (7 papers) and Semiconductor Quantum Structures and Devices (7 papers). A. Jean collaborates with scholars based in Canada, France and United States. A. Jean's co-authors include Mohamed Chaker, J. C. Kieffer, S. Boily, My Alı El Khakani, H. Pépin, S. C. Gujrathi, F. Rousseaux, M. F. Ravet, M.E. O'Hern and E. Gat and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Jean

19 papers receiving 485 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Jean Canada 9 341 288 165 82 67 21 496
Jun Gotoh Japan 11 148 0.4× 184 0.6× 79 0.5× 113 1.4× 52 0.8× 39 408
Harumichi Sato Japan 13 300 0.9× 96 0.3× 125 0.8× 99 1.2× 137 2.0× 53 517
Ender Savrun United States 11 237 0.7× 182 0.6× 106 0.6× 49 0.6× 139 2.1× 40 467
N. Rajan United States 7 452 1.3× 205 0.7× 120 0.7× 115 1.4× 192 2.9× 11 637
T.F. Retajczyk United States 7 229 0.7× 106 0.4× 74 0.4× 102 1.2× 77 1.1× 15 340
Anna Kaźmierczak-Bałata Poland 14 127 0.4× 262 0.9× 117 0.7× 44 0.5× 65 1.0× 41 406
Biao Yuan United States 6 189 0.6× 104 0.4× 132 0.8× 148 1.8× 194 2.9× 7 398
K. Prume Germany 14 239 0.7× 386 1.3× 78 0.5× 70 0.9× 293 4.4× 22 540
H. Takamizawa Japan 11 377 1.1× 268 0.9× 68 0.4× 35 0.4× 97 1.4× 21 553
W. R. LaFontaine United States 8 155 0.5× 189 0.7× 313 1.9× 100 1.2× 118 1.8× 15 444

Countries citing papers authored by A. Jean

Since Specialization
Citations

This map shows the geographic impact of A. Jean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Jean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Jean more than expected).

Fields of papers citing papers by A. Jean

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Jean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Jean. The network helps show where A. Jean may publish in the future.

Co-authorship network of co-authors of A. Jean

This figure shows the co-authorship network connecting the top 25 collaborators of A. Jean. A scholar is included among the top collaborators of A. Jean based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Jean. A. Jean is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jean, A., Dominique Jeulin, Samuel Forest, Sabine Cantournet, & F. N’Guyen. (2010). A multiscale microstructure model of carbon black distribution in rubber. Journal of Microscopy. 241(3). 243–260. 40 indexed citations
2.
Jean, A., et al.. (2007). A Study on the Electrical Properties of ITO Thin Films with Various Oxygen Gas Flow Rate. Journal of the Korean institute of surface engineering. 40(3). 144–148.
3.
Khakani, My Alı El, Mohamed Chaker, A. Jean, et al.. (1994). Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests. Journal of materials research/Pratt's guide to venture capital sources. 9(1). 96–103. 119 indexed citations
4.
Khakani, My Alı El, Mohamed Chaker, A. Jean, et al.. (1993). Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films. Journal of Applied Physics. 74(4). 2834–2840. 92 indexed citations
5.
Jean, A., My Alı El Khakani, Mohamed Chaker, et al.. (1993). Biaxial Young’s modulus of silicon carbide thin films. Applied Physics Letters. 62(18). 2200–2202. 6 indexed citations
6.
Jean, A., My Alı El Khakani, Mohamed Chaker, et al.. (1992). Mechanical properties of silicon carbide films for X-ray lithography application. Canadian Journal of Physics. 70(10-11). 834–837. 1 indexed citations
7.
Gat, E., My Alı El Khakani, Mohamed Chaker, et al.. (1992). A study of the effect of composition on the microstructural evolution of a–SixC1−x: H PECVD films: IR absorption and XPS characterizations. Journal of materials research/Pratt's guide to venture capital sources. 7(9). 2478–2487. 77 indexed citations
8.
Chaker, M., S. Boily, My Alı El Khakani, et al.. (1992). X-ray mask development based on SiC membrane and W absorber. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(6). 3191–3195. 21 indexed citations
9.
Jean, A., Mohamed Chaker, Puiki Leung, et al.. (1992). Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application. Journal of Applied Physics. 72(7). 3110–3115. 44 indexed citations
10.
Lombos, B. A., et al.. (1991). Three dimensional superlattice in Pb1−χGdχTe (Wigner's crystallization). Journal of Magnetism and Magnetic Materials. 93. 391–394. 1 indexed citations
11.
Dodelet, J. P., et al.. (1991). Electrical Characterization of GaAs Epitaxial Layers Grown by CSVT from Zn‐doped GaAs Sources. Journal of The Electrochemical Society. 138(3). 830–834. 4 indexed citations
12.
Bretagnon, T., et al.. (1991). Midgap electron traps in n-type GaAs epitaxial layers grown by the close-spaced vapor transport technique. Canadian Journal of Physics. 69(3-4). 407–411. 1 indexed citations
13.
Chaker, Mohamed, S. Boily, A. Jean, et al.. (1991). Recent developments of x-ray lithography in Canada. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1465. 16–16. 2 indexed citations
14.
Boily, S., Mohamed Chaker, H. Pépin, et al.. (1991). SiC membranes for x-ray masks produced by laser ablation deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(6). 3254–3257. 22 indexed citations
15.
Bretagnon, T., et al.. (1990). Hole traps in n-type epitaxial GaAs layers grown by the close-spaced vapor transport technique. Solid State Communications. 74(4). 223–226.
16.
Lombos, B. A., et al.. (1990). EL2 trends in As-rich GaAs grown by close-spaced vapor transport. Journal of Applied Physics. 67(4). 1879–1883. 7 indexed citations
17.
Paynter, R.W., et al.. (1989). Doping of GaAs epitaxial layers grown on (100) GaAs by close-spaced vapor transport. Canadian Journal of Physics. 67(4). 251–258. 11 indexed citations
18.
Gouskov, L., et al.. (1988). Noise equivalent power calculation: Application to Ga0.96Al0.04Sb avalanche photodiodes. Journal of Applied Physics. 64(11). 6541–6545. 5 indexed citations
19.
Pérotin, M., et al.. (1987). Jonctions Ga0,96Al0,04Sb adaptées à la photodétection à 1,55 μm réalisées par épitaxie en phase liquide. Revue de Physique Appliquée. 22(8). 935–938. 6 indexed citations
20.
Gouskov, L., et al.. (1986). Liquid-phase-epitaxial growth of Ga0.96Al0.04Sb: Electrical and photoelectrical characterizations. Journal of Applied Physics. 60(10). 3582–3591. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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