E. E. Reuter

415 total citations
17 papers, 346 citations indexed

About

E. E. Reuter is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, E. E. Reuter has authored 17 papers receiving a total of 346 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 9 papers in Electrical and Electronic Engineering and 8 papers in Materials Chemistry. Recurrent topics in E. E. Reuter's work include GaN-based semiconductor devices and materials (9 papers), Ga2O3 and related materials (6 papers) and Semiconductor Quantum Structures and Devices (4 papers). E. E. Reuter is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Ga2O3 and related materials (6 papers) and Semiconductor Quantum Structures and Devices (4 papers). E. E. Reuter collaborates with scholars based in United States and China. E. E. Reuter's co-authors include S. G. Bishop, J. J. Coleman, Douglas Turnbull, Sungeun Kim, Simin Gu, S. J. Rhee, Siddharth Ramachandran, S. G. Bishop, J. T. Verdeyen and Andrew M. Jones and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Photonics Technology Letters.

In The Last Decade

E. E. Reuter

16 papers receiving 338 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. E. Reuter United States	9	222	177	149	134	110	17	346
Ei Ei Nyein United States	9	201 0.9×	314 1.8×	210 1.4×	156 1.2×	102 0.9×	23	425
Y.T. Wang China	10	202 0.9×	156 0.9×	65 0.4×	143 1.1×	60 0.5×	38	312
Yen-Sheng Lin Taiwan	7	358 1.6×	229 1.3×	116 0.8×	156 1.2×	179 1.6×	9	425
Sascha Kreiskott United States	10	257 1.2×	177 1.0×	112 0.8×	108 0.8×	43 0.4×	12	359
Michael A. Derenge United States	13	228 1.0×	88 0.5×	338 2.3×	78 0.6×	121 1.1×	46	425
Tetsuji Honjo Japan	12	344 1.5×	233 1.3×	103 0.7×	105 0.8×	33 0.3×	20	370
X. Li United States	12	398 1.8×	227 1.3×	88 0.6×	124 0.9×	52 0.5×	15	459
E. Nebauer Germany	12	119 0.5×	197 1.1×	302 2.0×	51 0.4×	162 1.5×	48	414
V. V. Kaminski Russia	6	246 1.1×	105 0.6×	119 0.8×	97 0.7×	106 1.0×	12	336
Man-Fang Huang Taiwan	9	170 0.8×	92 0.5×	227 1.5×	89 0.7×	198 1.8×	35	356

Countries citing papers authored by E. E. Reuter

Since Specialization

Citations

This map shows the geographic impact of E. E. Reuter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. E. Reuter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. E. Reuter more than expected).

Fields of papers citing papers by E. E. Reuter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. E. Reuter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. E. Reuter. The network helps show where E. E. Reuter may publish in the future.

Co-authorship network of co-authors of E. E. Reuter

This figure shows the co-authorship network connecting the top 25 collaborators of E. E. Reuter. A scholar is included among the top collaborators of E. E. Reuter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. E. Reuter. E. E. Reuter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Gu, Simin, et al.. (2002). Photoluminescence and excitation spectroscopy in Er:As/sub 2/S/sub 3/ glass. 206–207.

Reuter, E. E., et al.. (1999). Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 363–368. 8 indexed citations

Jones, Andrew M., J. L. Jewell, James C. Mabon, et al.. (1999). Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate. Applied Physics Letters. 74(7). 1000–1002. 25 indexed citations

Rhee, S. J., Sungeun Kim, E. E. Reuter, S. G. Bishop, & R. J. Molnar. (1998). Photoluminescence excitation spectroscopy of free-to-bound transitions in undoped GaN grown by hydride vapor phase epitaxy. Applied Physics Letters. 73(18). 2636–2638. 16 indexed citations

Kim, Sungeun, et al.. (1998). The incorporation of arsenic in GaN by metalorganic chemical vapor deposition. Applied Physics Letters. 72(16). 1990–1992. 74 indexed citations

Reuter, E. E., et al.. (1998). Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride. MRS Proceedings. 537. 1 indexed citations

Kim, Sungeun, S. J. Rhee, Douglas Turnbull, et al.. (1997). Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy. Applied Physics Letters. 71(2). 231–233. 69 indexed citations

Reuter, E. E., C. Youtsey, I. Adesida, & S. G. Bishop. (1997). Photoluminescence of Wet- and Dry-Etched Gallium Nitride. MRS Proceedings. 482. 3 indexed citations

Panepucci, Roberto R., E. E. Reuter, Patrick Fay, et al.. (1996). Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 3641–3645. 4 indexed citations

10.

Turnbull, Douglas, et al.. (1996). Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition. Journal of Applied Physics. 80(8). 4609–4614. 29 indexed citations

11.

Gu, Simin, et al.. (1996). Effect of e-beam irradiation on a p-n junction GaN light emitting diode. Journal of Applied Physics. 80(5). 2687–2690. 22 indexed citations

12.

Gu, Simin, Siddharth Ramachandran, E. E. Reuter, et al.. (1995). Novel broad-band excitation of Er3+ luminescence in chalcogenide glasses. Applied Physics Letters. 66(6). 670–672. 40 indexed citations

13.

Gu, Simin, Siddharth Ramachandran, E. E. Reuter, et al.. (1995). Photoluminescence and excitation spectroscopy of Er-doped As2S3 glass: Novel broad band excitation mechanism. Journal of Applied Physics. 77(7). 3365–3371. 32 indexed citations

14.

Jones, Andrew M., Douglas Turnbull, E. E. Reuter, et al.. (1995). Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD. MRS Proceedings. 395. 15 indexed citations

15.

Reuter, E. E., Simin Gu, Paul W. Bohn, et al.. (1995). Effects of Gallium Arsenide Passivation on Scanning Tunneling Microscope Excited Luminescence. MRS Proceedings. 380. 2 indexed citations

16.

Gu, Simin, Xin Liu, M. Covington, et al.. (1994). Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires. Journal of Applied Physics. 75(12). 8071–8074. 3 indexed citations

17.

Reuter, E. E., et al.. (1994). Photo-injected carrier distributions in metal-semiconductor-metal photodetectors imaged by photoluminescence microscopy. IEEE Photonics Technology Letters. 6(8). 966–970. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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