R. Fauquembergue

725 total citations
38 papers, 501 citations indexed

About

R. Fauquembergue is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. Fauquembergue has authored 38 papers receiving a total of 501 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in R. Fauquembergue's work include Semiconductor materials and devices (18 papers), Semiconductor Quantum Structures and Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). R. Fauquembergue is often cited by papers focused on Semiconductor materials and devices (18 papers), Semiconductor Quantum Structures and Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). R. Fauquembergue collaborates with scholars based in France, Switzerland and Japan. R. Fauquembergue's co-authors include M. Constant, E. Constant, J. Zimmermann, A. Cappy, Jean-Luc Thobel, L. Baudry, G. Salmer, P.A. Rolland, F. Dessenne and Jean‐Pierre Vilcot and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Fauquembergue

36 papers receiving 468 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Fauquembergue France 12 342 332 76 67 66 38 501
M. Constant France 11 165 0.5× 193 0.6× 90 1.2× 46 0.7× 80 1.2× 34 337
Sen Mou Italy 13 194 0.6× 207 0.6× 76 1.0× 9 0.1× 53 0.8× 33 351
B. Lax United States 13 314 0.9× 337 1.0× 117 1.5× 26 0.4× 54 0.8× 33 471
K. A. Valiev Russia 8 115 0.3× 158 0.5× 21 0.3× 12 0.2× 25 0.4× 49 296
A. I. Filin United States 12 143 0.4× 358 1.1× 46 0.6× 43 0.6× 100 1.5× 37 437
G. Piacente Italy 10 63 0.2× 281 0.8× 8 0.1× 111 1.7× 119 1.8× 12 415
M.J. Mondry United States 11 507 1.5× 421 1.3× 74 1.0× 113 1.7× 50 0.8× 27 595
C. Wilkinson United States 16 81 0.2× 84 0.3× 40 0.5× 32 0.5× 16 0.2× 35 625
Orsolya Kálmán Hungary 13 168 0.5× 471 1.4× 88 1.2× 44 0.7× 45 0.7× 31 512
Shlomi Matityahu Israel 10 140 0.4× 272 0.8× 22 0.3× 54 0.8× 68 1.0× 17 344

Countries citing papers authored by R. Fauquembergue

Since Specialization
Citations

This map shows the geographic impact of R. Fauquembergue's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Fauquembergue with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Fauquembergue more than expected).

Fields of papers citing papers by R. Fauquembergue

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Fauquembergue. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Fauquembergue. The network helps show where R. Fauquembergue may publish in the future.

Co-authorship network of co-authors of R. Fauquembergue

This figure shows the co-authorship network connecting the top 25 collaborators of R. Fauquembergue. A scholar is included among the top collaborators of R. Fauquembergue based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Fauquembergue. R. Fauquembergue is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dubois, Emmanuel, et al.. (2002). Monte Carlo/drift-diffusion coupling: non-equilibrium transport in deep submicron MOSFETs. SPIRE - Sciences Po Institutional REpository. 519–522.
2.
3.
Thobel, Jean-Luc, et al.. (1997). Monte Carlo simulation of high-field electron transport in GaAs using an analytical band-structure model. Journal of Applied Physics. 81(7). 3160–3169. 15 indexed citations
4.
Dessenne, F., et al.. (1997). Monte Carlo study of diffusion phenomena in III - V modulation doped heterostructures. Semiconductor Science and Technology. 12(1). 69–76. 7 indexed citations
5.
Constant, M., et al.. (1995). Raman characterization of an operating InAlAs—InGaAs—InP high electronic mobility transistor. Journal of Raman Spectroscopy. 26(2). 167–172. 7 indexed citations
6.
Chovet, A., et al.. (1992). Comparison of Si and GaAs integrated magnetotransistors. Sensors and Actuators A Physical. 33(1-2). 57–61. 1 indexed citations
7.
Fauquembergue, R., et al.. (1991). Etude theorique du transPort électronique et du contrôle de charge dans AlO,48In0,52As/Ga0,47In0,53As/InP. Applications a la realisation de HEMT. Journal de Physique III. 1(4). 511–520. 1 indexed citations
8.
Fauquembergue, R.. (1991). Computer simulation of III–V MESFET's, MODFETT's and MIS-like FET's. Computer Physics Communications. 67(1). 63–72. 3 indexed citations
9.
Thobel, Jean-Luc, et al.. (1990). Electron transport properties of strained InxGa1−xAs. Applied Physics Letters. 56(4). 346–348. 66 indexed citations
10.
Fauquembergue, R., et al.. (1988). The submicron inverted MODFET I-GaAs/N+-AlGaAs: a 2D Monte-Carlo study. Solid-State Electronics. 31(3-4). 595–598. 3 indexed citations
11.
Fauquembergue, R., et al.. (1987). Monte-Carlo Simulation of Classical and Inverted MODFET Structures. European Solid-State Device Research Conference. 107–110. 1 indexed citations
12.
Fauquembergue, R., et al.. (1985). Two dimensional Monte Carlo simulation of an injection modulated M.I.S.F.E.T. structure. Physica B+C. 129(1-3). 563–567. 3 indexed citations
13.
Zimmermann, J., et al.. (1985). Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices. Solid-State Electronics. 28(8). 733–740. 23 indexed citations
14.
Rolland, P.A., et al.. (1984). Theoretical investigation of n+-n-n+Ga0.47In0.53As TEO's up to the millimeter-wave range. IEEE Electron Device Letters. 5(11). 434–436. 8 indexed citations
15.
Zimmermann, J., et al.. (1984). A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices. physica status solidi (a). 81(2). 569–577. 3 indexed citations
16.
Fauquembergue, R., et al.. (1982). Monte-Carlo simulation of space-charge injection FET. Electronics Letters. 18(15). 670–671. 11 indexed citations
17.
Cappy, A., et al.. (1981). Noise modeling in submicrometer-gate FET's. IEEE Transactions on Electron Devices. 28(7). 784–789. 35 indexed citations
18.
Zimmermann, J., et al.. (1980). Electron dynamics in P -Si m.o.s.f.e.t. inversion channels. Electronics Letters. 16(17). 664–666. 5 indexed citations
19.
Fauquembergue, R., et al.. (1977). Application de la méthode de Monte Carlo à l'étude de la dynamique moléculaire orientationnelle en phase condensée. Journal de physique. 38(6). 707–719. 8 indexed citations
20.
Constant, M. & R. Fauquembergue. (1973). Raman scattering. I. Vibrational correlation in methyl iodide. The Journal of Chemical Physics. 58(9). 4030–4031. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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