Д.В. Грузнев

1.2k total citations
109 papers, 952 citations indexed

About

Д.В. Грузнев is a scholar working on Atomic and Molecular Physics, and Optics, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Д.В. Грузнев has authored 109 papers receiving a total of 952 indexed citations (citations by other indexed papers that have themselves been cited), including 94 papers in Atomic and Molecular Physics, and Optics, 32 papers in Materials Chemistry and 28 papers in Condensed Matter Physics. Recurrent topics in Д.В. Грузнев's work include Surface and Thin Film Phenomena (80 papers), Semiconductor materials and interfaces (30 papers) and Graphene research and applications (22 papers). Д.В. Грузнев is often cited by papers focused on Surface and Thin Film Phenomena (80 papers), Semiconductor materials and interfaces (30 papers) and Graphene research and applications (22 papers). Д.В. Грузнев collaborates with scholars based in Russia, Japan and Taiwan. Д.В. Грузнев's co-authors include А. В. Зотов, А. А. Саранин, L. V. Bondarenko, A. Y. Tupchaya, A. V. Matetskiy, С. В. Еремеев, Alexey N. Mihalyuk, Ching‐Ming Wei, T. Tambo and Jyh‐Pin Chou and has published in prestigious journals such as Physical Review Letters, Nature Communications and The Journal of Chemical Physics.

In The Last Decade

Д.В. Грузнев

103 papers receiving 935 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Д.В. Грузнев Russia 15 727 420 230 228 142 109 952
L. V. Bondarenko Russia 12 497 0.7× 362 0.9× 195 0.8× 130 0.6× 86 0.6× 75 694
M. Higashiguchi Japan 14 401 0.6× 466 1.1× 328 1.4× 160 0.7× 75 0.5× 42 884
S. A. Gorovikov Germany 11 311 0.4× 332 0.8× 110 0.5× 142 0.6× 52 0.4× 22 600
M. Dähne Germany 23 1.2k 1.6× 417 1.0× 291 1.3× 734 3.2× 312 2.2× 85 1.4k
H. Kambara Japan 11 623 0.9× 703 1.7× 269 1.2× 244 1.1× 98 0.7× 43 1.0k
A. V. Matetskiy Russia 12 385 0.5× 338 0.8× 157 0.7× 148 0.6× 55 0.4× 56 571
Hiroyoshi Ishii Japan 11 347 0.5× 372 0.9× 245 1.1× 95 0.4× 73 0.5× 42 729
B. Lalmi France 8 633 0.9× 1.2k 2.9× 50 0.2× 289 1.3× 106 0.7× 10 1.3k
Tomonori Matsushita Japan 15 328 0.5× 331 0.8× 56 0.2× 575 2.5× 57 0.4× 46 737
M. D. Upward United Kingdom 12 297 0.4× 270 0.6× 57 0.2× 239 1.0× 103 0.7× 21 510

Countries citing papers authored by Д.В. Грузнев

Since Specialization
Citations

This map shows the geographic impact of Д.В. Грузнев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Д.В. Грузнев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Д.В. Грузнев more than expected).

Fields of papers citing papers by Д.В. Грузнев

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Д.В. Грузнев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Д.В. Грузнев. The network helps show where Д.В. Грузнев may publish in the future.

Co-authorship network of co-authors of Д.В. Грузнев

This figure shows the co-authorship network connecting the top 25 collaborators of Д.В. Грузнев. A scholar is included among the top collaborators of Д.В. Грузнев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Д.В. Грузнев. Д.В. Грузнев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bondarenko, L. V., Alexey N. Mihalyuk, С. В. Еремеев, et al.. (2025). Magnetotransport properties of a single-atom-thick GdPb3 kagome compound on Si(111). Journal of Materials Chemistry C. 13(14). 7219–7225.
2.
Mihalyuk, Alexey N., L. V. Bondarenko, A. Y. Tupchaya, et al.. (2023). Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications. Nanoscale. 16(3). 1272–1281.
3.
Tupchaya, A. Y., L. V. Bondarenko, Alexey N. Mihalyuk, et al.. (2022). 2D system incorporating perforated Mg sheet sandwiched between Pb layer and Si(111). Applied Surface Science. 589. 152951–152951. 2 indexed citations
4.
Bondarenko, L. V., A. Y. Tupchaya, Д.В. Грузнев, et al.. (2022). Gold Interlayer Promotes Superconductivity in Single and Double Atomic Pb Layers on Si(100). The Journal of Physical Chemistry Letters. 13(45). 10479–10485. 5 indexed citations
5.
Bondarenko, L. V., A. Y. Tupchaya, Д.В. Грузнев, et al.. (2022). Single and double In atomic layers grown on top of a single atomic NiSi2 layer on Si(111). Physical review. B.. 106(3). 3 indexed citations
6.
Bondarenko, L. V., A. Y. Tupchaya, Д.В. Грузнев, et al.. (2020). Superconducting proximity effect in a Rashba-type surface state of Pb/Ge(111). Superconductor Science and Technology. 33(7). 75007–75007. 3 indexed citations
7.
Bondarenko, L. V., A. Y. Tupchaya, Alexey N. Mihalyuk, et al.. (2019). Fabrication and characterization of a single monolayer NiSi 2 sandwiched between a Tl capping layer and a Si(1 1 1) substrate. 2D Materials. 7(2). 25009–25009. 10 indexed citations
8.
Грузнев, Д.В., L. V. Bondarenko, A. Y. Tupchaya, et al.. (2019). Atomic, electronic and transport properties of In–Au 2D compound on Si(1 0 0). Journal of Physics Condensed Matter. 32(13). 135003–135003. 1 indexed citations
9.
Bondarenko, L. V., A. Y. Tupchaya, A. V. Matetskiy, et al.. (2019). C60 capping of metallic 2D Tl-Au compound with preservation of its basic properties at the buried interface. Applied Surface Science. 501. 144253–144253. 7 indexed citations
10.
Bondarenko, L. V., A. Y. Tupchaya, Д.В. Грузнев, et al.. (2018). Electronic properties of the two-dimensional (Tl, Rb)/Si(1 1 1)$\boldsymbol{\sqrt3 \times \sqrt3}$ compound having a honeycomb-like structure. Journal of Physics Condensed Matter. 30(41). 415502–415502. 3 indexed citations
11.
Nakamura, Tomonori, L. V. Bondarenko, A. Y. Tupchaya, et al.. (2018). Superconductivity of Pb Ultrathin Film on Ge(111) Surface. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 386. 80–85. 1 indexed citations
12.
Грузнев, Д.В., L. V. Bondarenko, A. Y. Tupchaya, et al.. (2017). Ge(111)表面上の2D Tl‐Pb化合物:原子配列と電子バンド構造. Journal of Physics Condensed Matter. 29(3). 9. 1 indexed citations
13.
Mihalyuk, Alexey N., Cheng‐Rong Hsing, Ching‐Ming Wei, et al.. (2017). (Tl, Au)/Si(1 1 1)${\sqrt7 \times \sqrt7}$ 2D compound: an ordered array of identical Au clusters embedded in Tl matrix. Journal of Physics Condensed Matter. 30(2). 25002–25002. 3 indexed citations
14.
Mihalyuk, Alexey N., L. V. Bondarenko, A. Y. Tupchaya, et al.. (2017). Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties. Surface Science. 668. 17–22. 7 indexed citations
15.
Mihalyuk, Alexey N., Cheng‐Rong Hsing, Д.В. Грузнев, et al.. (2016). Si(111)における√7×√7‐同位相の低温一原子層. Surface Science. 649. 19. 1 indexed citations
16.
Грузнев, Д.В., L. V. Bondarenko, A. Y. Tupchaya, et al.. (2015). Incommensurate superstructure in heavily doped fullerene layer on Bi/Si(111) surface. The Journal of Chemical Physics. 143(7). 74707–74707. 1 indexed citations
17.
Грузнев, Д.В., L. V. Bondarenko, A. V. Matetskiy, et al.. (2015). Si(111)上のTl/Sn原子サンドイッチの電子バンド構造. Physical Review B. 91(3). 1–35421. 7 indexed citations
18.
Грузнев, Д.В., et al.. (2010). Diffusion and clustering of adatoms on discommensurate surface template: Ge atoms on Si(1 1 1)“5 × 5”-Cu reconstruction. Surface Science. 604(7-8). 666–673. 3 indexed citations
19.
Грузнев, Д.В., et al.. (2006). Growth of In nanocrystallite arrays on the Si(100)-c(4×12)–Al surface. Surface Science. 600(22). 4986–4991. 4 indexed citations
20.
Грузнев, Д.В., et al.. (2006). Si(111)α3×3Auphase modified by In adsorption: Stabilization of a homogeneous surface by stress relief. Physical Review B. 73(11). 39 indexed citations

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