Dongning Yao

893 total citations
34 papers, 777 citations indexed

About

Dongning Yao is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Dongning Yao has authored 34 papers receiving a total of 777 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Materials Chemistry, 33 papers in Electrical and Electronic Engineering and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Dongning Yao's work include Phase-change materials and chalcogenides (34 papers), Chalcogenide Semiconductor Thin Films (32 papers) and Liquid Crystal Research Advancements (9 papers). Dongning Yao is often cited by papers focused on Phase-change materials and chalcogenides (34 papers), Chalcogenide Semiconductor Thin Films (32 papers) and Liquid Crystal Research Advancements (9 papers). Dongning Yao collaborates with scholars based in China and United States. Dongning Yao's co-authors include Zhitang Song, Liangcai Wu, Feng Rao, Bo Liu, Sannian Song, Songlin Feng, Min Zhu, Xilin Zhou, Cheng Peng and Kun Ren and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Alloys and Compounds.

In The Last Decade

Dongning Yao

33 papers receiving 762 citations

Peers

Dongning Yao

EEE

EOMM

Jennifer Luckas France

Nak‐Jin Seong South Korea

Sang-Ouk Ryu South Korea

Chain‐Ming Lee Taiwan

Heesun Bae South Korea

Kijoon H. P. Kim South Korea

Yangho Jung South Korea

Philipp Franz Germany

Jae Sung Roh South Korea

Yu Zhan China

Jennifer Luckas France

Dongning Yao

503 ×0.7

423 ×0.6

EEE

135 ×0.7

79 ×0.5

80 ×0.5

EOMM

Citations per year, relative to Dongning Yao Dongning Yao (= 1×) peers Jennifer Luckas

Countries citing papers authored by Dongning Yao

Since Specialization

Citations

This map shows the geographic impact of Dongning Yao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dongning Yao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dongning Yao more than expected).

Fields of papers citing papers by Dongning Yao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dongning Yao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dongning Yao. The network helps show where Dongning Yao may publish in the future.

Co-authorship network of co-authors of Dongning Yao

This figure shows the co-authorship network connecting the top 25 collaborators of Dongning Yao. A scholar is included among the top collaborators of Dongning Yao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dongning Yao. Dongning Yao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wang, Hao, Sannian Song, Zhitang Song, et al.. (2019). Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition. Journal of Materials Science Materials in Electronics. 31(8). 5833–5837. 3 indexed citations

Wang, Hao, Tianqi Guo, Yuan Xue, et al.. (2019). The phase change memory features high-temperature characteristic based on Ge-Sb-Se-Te alloys. Materials Letters. 254. 182–185. 11 indexed citations

Xia, Yangyang, Bo Liu, Qing Wang, et al.. (2016). Etching characteristics of phase change material GeTe in inductively coupled BCl3/Ar plasma for phase change memory. Microelectronic Engineering. 161. 69–73. 2 indexed citations

Song, Sannian, Lanlan Shen, Zhitang Song, et al.. (2016). Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9818. 98180N–98180N. 1 indexed citations

Song, Sannian, Dongning Yao, Zhitang Song, et al.. (2015). Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon. Nanoscale Research Letters. 10(1). 89–89. 22 indexed citations

Wu, Liangcai, Xilin Zhou, Feng Rao, et al.. (2014). High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application. Applied Physics Letters. 105(24). 62 indexed citations

Song, Sannian, Zhitang Song, Cheng Peng, et al.. (2013). Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer. Nanoscale Research Letters. 8(1). 77–77. 11 indexed citations

Zhu, Min, Liangcai Wu, Feng Rao, et al.. (2013). The effect of titanium doping on the structure and phase change characteristics of Sb4Te. Journal of Applied Physics. 114(12). 14 indexed citations

Li, Juntao, Bo Liu, Zhitang Song, et al.. (2013). Reactive ion etching of Si₂Sb₂Te₅in CF₄/Ar plasma for a nonvolatile phase-change memory device. Journal of Semiconductors. 34(5). 56001–56001. 1 indexed citations

10.

Song, Sannian, Zhitang Song, Feng Rao, et al.. (2012). Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications. Applied Physics Letters. 100(19). 55 indexed citations

11.

Zhang, Xu, Bo Liu, Cheng Peng, et al.. (2012). Germanium Nitride as a Buffer Layer for Phase Change Memory. Chinese Physics Letters. 29(10). 107201–107201. 4 indexed citations

12.

Song, Sannian, Zhitang Song, Feng Rao, et al.. (2011). Ga-Sb-Se material for low-power phase change memory. Applied Physics Letters. 99(24). 48 indexed citations

13.

Zhou, Xilin, Liangcai Wu, Zhitang Song, et al.. (2011). Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si–Sb–Te films for phase-change memory. Thin Solid Films. 520(3). 1155–1159. 8 indexed citations

14.

Cheng, Limin, Liangcai Wu, Zhitang Song, et al.. (2011). Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application. Materials Letters. 71. 98–100. 14 indexed citations

15.

Zhu, Min, Liangcai Wu, Feng Rao, et al.. (2011). N-doped Sb2Te phase change materials for higher data retention. Journal of Alloys and Compounds. 509(41). 10105–10109. 46 indexed citations

16.

Zhu, Min, Liangcai Wu, Feng Rao, et al.. (2011). Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application. Electrochemical and Solid-State Letters. 14(10). H404–H404. 14 indexed citations

17.

Peng, Cheng, Zhitang Song, Feng Rao, et al.. (2011). Al1.3Sb3Te material for phase change memory application. Applied Physics Letters. 99(4). 48 indexed citations

18.

Song, Sannian, Zhitang Song, Dongning Yao, et al.. (2010). Phase Change Memory Based on (Sb₂Te₃)_0.85–(HfO₂)_0.15Composite Film. Applied Physics Express. 3(11). 111201–111201. 8 indexed citations

19.

Zhou, Xilin, Liangcai Wu, Zhitang Song, et al.. (2010). Investigation of Sb-rich Si2Sb2+x Te6 material for phase change random access memory application. Applied Physics A. 103(4). 1077–1081. 17 indexed citations

20.

Zhou, Xilin, Liangcai Wu, Zhitang Song, et al.. (2009). Si_2Sb_2Te_6 Phase Change Material for Low-Power Phase Change Memory Application. Applied Physics Express. 2(9). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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