Kun Ren

1.6k total citations
68 papers, 1.4k citations indexed

About

Kun Ren is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Kun Ren has authored 68 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 47 papers in Materials Chemistry and 24 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Kun Ren's work include Phase-change materials and chalcogenides (47 papers), Chalcogenide Semiconductor Thin Films (36 papers) and Transition Metal Oxide Nanomaterials (16 papers). Kun Ren is often cited by papers focused on Phase-change materials and chalcogenides (47 papers), Chalcogenide Semiconductor Thin Films (36 papers) and Transition Metal Oxide Nanomaterials (16 papers). Kun Ren collaborates with scholars based in China, United Kingdom and United States. Kun Ren's co-authors include Zhitang Song, Feng Rao, Liangcai Wu, Bo Liu, Min Zhu, Songlin Feng, Xilin Zhou, Yan Cheng, Sannian Song and Shilong Lv and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Kun Ren

64 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kun Ren China 22 1.2k 1.2k 377 298 253 68 1.4k
Je‐Hun Lee South Korea 23 981 0.8× 1.4k 1.2× 317 0.8× 166 0.6× 179 0.7× 50 1.6k
W. J. Wang Singapore 6 635 0.5× 572 0.5× 152 0.4× 210 0.7× 170 0.7× 15 799
Bomy Chen China 25 1.6k 1.3× 1.4k 1.2× 319 0.8× 373 1.3× 325 1.3× 98 1.7k
Zhitang Song China 18 832 0.7× 750 0.6× 198 0.5× 154 0.5× 257 1.0× 82 978
Walter K. Njoroge Germany 11 1.3k 1.0× 1.1k 0.9× 198 0.5× 360 1.2× 357 1.4× 22 1.4k
Bas Ketelaars Netherlands 3 824 0.7× 768 0.7× 217 0.6× 202 0.7× 186 0.7× 5 946
Alexej Pogrebnyakov United States 11 341 0.3× 360 0.3× 128 0.3× 161 0.5× 92 0.4× 22 572
Sandip Mondal India 18 483 0.4× 657 0.6× 102 0.3× 169 0.6× 87 0.3× 49 968
Hideki Horii South Korea 20 1.0k 0.8× 961 0.8× 197 0.5× 244 0.8× 194 0.8× 40 1.2k
E. Carria Italy 16 487 0.4× 445 0.4× 64 0.2× 156 0.5× 227 0.9× 32 704

Countries citing papers authored by Kun Ren

Since Specialization
Citations

This map shows the geographic impact of Kun Ren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kun Ren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kun Ren more than expected).

Fields of papers citing papers by Kun Ren

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kun Ren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kun Ren. The network helps show where Kun Ren may publish in the future.

Co-authorship network of co-authors of Kun Ren

This figure shows the co-authorship network connecting the top 25 collaborators of Kun Ren. A scholar is included among the top collaborators of Kun Ren based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kun Ren. Kun Ren is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ren, Kun, Dianyu Qi, Miao Zhou, et al.. (2025). Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node. Applied Physics Letters. 127(8).
2.
Guo, J. D., et al.. (2025). Sequence modeling for predicting three-dimensional plasma etching profiles with deep learning. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 43(4).
3.
Guo, J. D., et al.. (2025). Attention-enhanced conditional variational autoencoder integrating 3D plasma etching simulation for etching process optimization. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 43(2).
4.
Yu, Guoliang, Mingmin Zhu, Yan Li, et al.. (2025). A Metal Film Thickness Measurement System With a Large Range Based on High-Performance ME Sensors. IEEE/ASME Transactions on Mechatronics. 30(6). 4450–4459. 1 indexed citations
5.
6.
Ji, Lianze, Rongzhi Zhao, Chenglong Hu, et al.. (2021). Logical devices based on the antiferromagnetic-antimeron in a ferromagnet nanodot with gain. Applied Physics Letters. 118(17). 4 indexed citations
7.
Ren, Kun, Mengjiao Xia, Shuaishuai Zhu, et al.. (2020). Crystal-Like Glassy Structure in Sc-Doped BiSbTe Ensuring Excellent Speed and Power Efficiency in Phase Change Memory. ACS Applied Materials & Interfaces. 12(14). 16601–16608. 13 indexed citations
8.
Hu, Haihua, Yun Zheng, Kun Ren, et al.. (2020). Position selective dielectric polarization enhancement in CNT based heterostructures for highly efficient microwave absorption. Nanoscale. 13(4). 2324–2332. 44 indexed citations
9.
Ren, Kun, Yong Wang, Shilong Lv, et al.. (2019). Reducing structural change in the phase transition of Ge-doped Bi0.5Sb1.5Te3to enable high-speed and low-energy memory switching. Journal of Materials Chemistry C. 7(38). 11813–11823. 10 indexed citations
10.
Wang, Yong, Tianqi Guo, Tao Li, et al.. (2019). Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption. ACS Applied Materials & Interfaces. 11(11). 10848–10855. 35 indexed citations
11.
Ren, Kun, Xing Duan, Qinqin Xiong, et al.. (2019). Constructing reliable PCM and OTS devices with an interfacial carbon layer. Journal of Materials Science Materials in Electronics. 30(22). 20037–20042. 7 indexed citations
12.
Zhu, Min, Kun Ren, & Zhitang Song. (2019). Ovonic threshold switching selectors for three-dimensional stackable phase-change memory. MRS Bulletin. 44(9). 715–720. 87 indexed citations
13.
Wang, Yong, Tianbo Wang, Yonghui Zheng, et al.. (2018). Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application. Scientific Reports. 8(1). 15136–15136. 17 indexed citations
14.
Ren, Kun, Ruiheng Li, Xin Chen, et al.. (2018). Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application. Applied Physics Letters. 112(7). 36 indexed citations
15.
Ren, Kun, Min Zhu, Wenxiong Song, et al.. (2018). Electrical switching properties and structural characteristics of GeSe–GeTe films. Nanoscale. 11(4). 1595–1603. 31 indexed citations
16.
Wang, Yong, Yonghui Zheng, Tao Li, et al.. (2018). Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory. Applied Physics Letters. 112(13). 64 indexed citations
17.
Rao, Feng, Zhitang Song, Kun Ren, et al.. (2011). Si–Sb–Te materials for phase change memory applications. Nanotechnology. 22(14). 145702–145702. 105 indexed citations
18.
Zhou, Xilin, Liangcai Wu, Zhitang Song, et al.. (2011). Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si–Sb–Te films for phase-change memory. Thin Solid Films. 520(3). 1155–1159. 8 indexed citations
19.
Rao, Feng, Zhitang Song, Kun Ren, et al.. (2009). Sn 12 Sb 88 material for phase change memory. Applied Physics Letters. 95(3). 70 indexed citations
20.
Ren, Kun, et al.. (2007). Experimental Investigation of Relationship between the object- and Image Distance. PIERS Online. 3(3). 286–288. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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