David T. Danielson

2.7k total citations
23 papers, 1.4k citations indexed

About

David T. Danielson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, David T. Danielson has authored 23 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in David T. Danielson's work include Photonic and Optical Devices (12 papers), Semiconductor Quantum Structures and Devices (6 papers) and Semiconductor materials and devices (5 papers). David T. Danielson is often cited by papers focused on Photonic and Optical Devices (12 papers), Semiconductor Quantum Structures and Devices (6 papers) and Semiconductor materials and devices (5 papers). David T. Danielson collaborates with scholars based in United States. David T. Danielson's co-authors include Lionel C. Kimerling, Jürgen Michel, Samerkhae Jongthammanurak, D.D. Cannon, Kazumi Wada, Jifeng Liu, Yasuhiko Ishikawa, Daniel K. Sparacin, Dong Pan and Jason B. Baxter and has published in prestigious journals such as Energy & Environmental Science, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

David T. Danielson

23 papers receiving 1.3k citations

Peers

David T. Danielson
H.S. Reehal United Kingdom
E. Scheid France
J. Szmidt Poland
Gun-Hwan Lee South Korea
David A. J. Moran United Kingdom
Steven Brems Belgium
Ivan Gordon Belgium
David T. Danielson
Citations per year, relative to David T. Danielson David T. Danielson (= 1×) peers Koichi Wakita

Countries citing papers authored by David T. Danielson

Since Specialization
Citations

This map shows the geographic impact of David T. Danielson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David T. Danielson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David T. Danielson more than expected).

Fields of papers citing papers by David T. Danielson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David T. Danielson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David T. Danielson. The network helps show where David T. Danielson may publish in the future.

Co-authorship network of co-authors of David T. Danielson

This figure shows the co-authorship network connecting the top 25 collaborators of David T. Danielson. A scholar is included among the top collaborators of David T. Danielson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with David T. Danielson. David T. Danielson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Baxter, Jason B., Zhixi Bian, Gang Chen, et al.. (2009). Nanoscale design to enable the revolution in renewable energy. Energy & Environmental Science. 2(6). 559–559. 343 indexed citations
2.
Danielson, David T., et al.. (2008). Juvenile granulosa cell tumor of the ovary. Applied Radiology. 44–48. 2 indexed citations
3.
Cannon, D.D., Jifeng Liu, David T. Danielson, et al.. (2007). Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates. Applied Physics Letters. 91(25). 35 indexed citations
4.
Jongthammanurak, Samerkhae, Kazumi Wada, D.D. Cannon, et al.. (2006). Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films. 87. 34–36. 7 indexed citations
5.
Danielson, David T., Daniel K. Sparacin, Jürgen Michel, & Lionel C. Kimerling. (2006). Surface-energy-driven dewetting theory of silicon-on-insulator agglomeration. Journal of Applied Physics. 100(8). 136 indexed citations
6.
Jongthammanurak, Samerkhae, Jifeng Liu, Kazumi Wada, et al.. (2006). Large electro-optic effect in tensile strained Ge-on-Si films. Applied Physics Letters. 89(16). 54 indexed citations
7.
Olubuyide, Oluwamuyiwa, David T. Danielson, Lionel C. Kimerling, & Judy L. Hoyt. (2005). Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition. Thin Solid Films. 508(1-2). 14–19. 33 indexed citations
8.
Liu, Jifeng, D.D. Cannon, Kazumi Wada, et al.. (2005). Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications. Applied Physics Letters. 87(1). 190 indexed citations
9.
Liu, Jifeng, Jürgen Michel, Wojciech Giziewicz, et al.. (2005). High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform. Applied Physics Letters. 87(10). 191 indexed citations
10.
Liu, Jifeng, D.D. Cannon, Kazumi Wada, et al.. (2004). Silicidation-induced band gap shrinkage in Ge epitaxial films on Si. Applied Physics Letters. 84(5). 660–662. 40 indexed citations
11.
Liu, Jifeng, Jürgen Michel, Wojciech Giziewicz, et al.. (2004). A 20GHz tensile strained Ge photodetector on Si platform with broad detection spectrum for optical communications and on-chip applications. 1. 150–151. 1 indexed citations
12.
Cannon, D.D., Jifeng Liu, Yasuhiko Ishikawa, et al.. (2004). Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications. Applied Physics Letters. 84(6). 906–908. 122 indexed citations
13.
Liu, Jifeng, D.D. Cannon, Kazumi Wada, et al.. (2004). Deformation potential constants of biaxially tensile stressedGeepitaxial films onSi(100). Physical Review B. 70(15). 135 indexed citations
14.
Cannon, D.D., David T. Danielson, Samerkhae Jongthammanurak, et al.. (2003). Monolithic Si-based technology for optical receiver circuits. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4999. 145–145. 1 indexed citations
15.
Danielson, David T., et al.. (2003). HAST applications: acceleration factors and results for VLSI components. 114–121. 6 indexed citations
16.
Cannon, D.D., Samerkhae Jongthammanurak, Jifeng Liu, et al.. (2003). Near-infrared Ge Photodetectors Fabricated on Si Substrates with CMOS Technology. MRS Proceedings. 770. 2 indexed citations
17.
Marks, Robert A., Darla Chapman, David T. Danielson, & Andreas M. Glaeser. (2000). Joining of alumina via copper/niobium/copper interlayers. Acta Materialia. 48(18-19). 4425–4438. 41 indexed citations
18.
Bell, A. E., et al.. (1994). W nucleation on TiN from WF6 and SiH4. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 12(4). 1032–1038. 15 indexed citations
19.
Ford, W. K., et al.. (1993). Influence of surface contaminants on W film growth on Si(100) from WF6. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(4). 911–916. 2 indexed citations
20.
Danielson, David T., et al.. (1989). HAST Applications: Acceleration Factors and Results for VLSI Components. Reliability physics. 114–121. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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