Daniel V. McCaughan

514 total citations
27 papers, 377 citations indexed

About

Daniel V. McCaughan is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Daniel V. McCaughan has authored 27 papers receiving a total of 377 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 10 papers in Computational Mechanics and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Daniel V. McCaughan's work include Semiconductor materials and devices (17 papers), Ion-surface interactions and analysis (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). Daniel V. McCaughan is often cited by papers focused on Semiconductor materials and devices (17 papers), Ion-surface interactions and analysis (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). Daniel V. McCaughan collaborates with scholars based in United Kingdom, United States and India. Daniel V. McCaughan's co-authors include R.A. Kushner, C. W. White, D.L. Simms, N. H. Tolk, B. C. Wonsiewicz, Ronald L. Meek, H. C. Webber, J Geddes, C. W. White and Eoin W. Gray and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Daniel V. McCaughan

26 papers receiving 338 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daniel V. McCaughan United Kingdom 11 254 185 131 75 56 27 377
E H Hirsch Australia 8 164 0.6× 104 0.6× 124 0.9× 60 0.8× 128 2.3× 37 332
E. te Kaat Germany 10 202 0.8× 154 0.8× 107 0.8× 69 0.9× 13 0.2× 12 339
J. Auleytner Poland 8 186 0.7× 152 0.8× 131 1.0× 78 1.0× 12 0.2× 92 331
I. Jenčič Slovenia 9 205 0.8× 154 0.8× 184 1.4× 83 1.1× 14 0.3× 20 376
H. Mannsperger Germany 10 339 1.3× 75 0.4× 242 1.8× 78 1.0× 25 0.4× 19 445
J.E. Westmoreland United States 8 172 0.7× 209 1.1× 146 1.1× 57 0.8× 24 0.4× 14 334
Tatsumi Mizutani Japan 13 398 1.6× 102 0.6× 108 0.8× 51 0.7× 125 2.2× 26 466
P. D. Augustus United Kingdom 14 315 1.2× 56 0.3× 135 1.0× 273 3.6× 24 0.4× 27 450
G Carter United Kingdom 13 246 1.0× 307 1.7× 232 1.8× 50 0.7× 150 2.7× 59 458
R. W. Bicknell United Kingdom 11 293 1.2× 100 0.5× 113 0.9× 128 1.7× 26 0.5× 23 363

Countries citing papers authored by Daniel V. McCaughan

Since Specialization
Citations

This map shows the geographic impact of Daniel V. McCaughan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel V. McCaughan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel V. McCaughan more than expected).

Fields of papers citing papers by Daniel V. McCaughan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel V. McCaughan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel V. McCaughan. The network helps show where Daniel V. McCaughan may publish in the future.

Co-authorship network of co-authors of Daniel V. McCaughan

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel V. McCaughan. A scholar is included among the top collaborators of Daniel V. McCaughan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel V. McCaughan. Daniel V. McCaughan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Webber, H. C., et al.. (1981). Pulsed laser modification of SiO2/Si interface properties and minority-carrier lifetime. Applied Physics Letters. 39(3). 251–253. 6 indexed citations
2.
McCaughan, Daniel V., R.A. Kushner, D.L. Simms, & C. W. White. (1980). Effects of bombardment by low-energy neutral particles on silicon dioxide films. Journal of Applied Physics. 51(1). 299–304. 8 indexed citations
3.
Oliver, C.J., et al.. (1979). Integrating-input technique for c.c.d.. Electronics Letters. 15(16). 497–499. 1 indexed citations
4.
McCaughan, Daniel V., et al.. (1978). Scratch filter using c.c.d.s. Electronics Letters. 14(21). 691–692.
5.
McCaughan, Daniel V., et al.. (1976). A processor for pulse-doppler radar. IEEE Transactions on Electron Devices. 23(2). 168–172. 4 indexed citations
6.
McCaughan, Daniel V., et al.. (1976). A processor for pulse-Doppler radar. IEEE Journal of Solid-State Circuits. 11(1). 100–104. 10 indexed citations
7.
McCaughan, Daniel V., et al.. (1976). Phase-referred input: a simple new linear c.c.d. input method. Electronics Letters. 12(25). 682–683. 2 indexed citations
8.
White, C. W., D.L. Simms, N. H. Tolk, & Daniel V. McCaughan. (1975). Effects of nonradiative de-excitation of excited sputtered atoms near silicon and silicon dioxide surfaces. Surface Science. 49(2). 657–663. 57 indexed citations
9.
Gray, Eoin W., et al.. (1975). Arc duration reduction in an organic atmosphere by electrode implantation of low ionization potential materials. Journal of Applied Physics. 46(2). 676–678. 5 indexed citations
10.
McCaughan, Daniel V. & R.A. Kushner. (1974). Degradation of oxide films due to radiation effects in exposure to plasmas in sputter deposition and backsputtering. Proceedings of the IEEE. 62(9). 1236–1241. 17 indexed citations
11.
McCaughan, Daniel V., R.A. Kushner, & S. Wagner. (1974). Complete Removal of Sodium from Silicon Dioxide Films by Formation of Phosphosilicate Glass. Journal of The Electrochemical Society. 121(5). 724–724. 3 indexed citations
12.
Kushner, R.A., et al.. (1974). Mobilization of sodium in SiO2films by ion bombardment. Physical review. B, Solid state. 10(6). 2632–2641. 40 indexed citations
13.
McCaughan, Daniel V. & R.A. Kushner. (1974). Ion migration effects in r.f. “sputter cleaning” of dielectric films. Thin Solid Films. 22(3). 359–363. 5 indexed citations
14.
Meek, Ronald L., et al.. (1974). Implantation of Argon into SiO[sub 2] Films Due to Backsputter Cleaning. Journal of The Electrochemical Society. 121(4). 558–558. 13 indexed citations
15.
Schmidt, Péter, Daniel V. McCaughan, & R.A. Kushner. (1974). Problems in the analysis of semiconductor device materials exposed to ionizing radiation. Proceedings of the IEEE. 62(9). 1220–1223. 1 indexed citations
16.
McCaughan, Daniel V., et al.. (1973). An Apparatus for Study of Secondary Ions from Ion Bombardment of a Metal Surface. Review of Scientific Instruments. 44(5). 605–610. 2 indexed citations
17.
McCaughan, Daniel V., et al.. (1973). Dielectric strength and interface-state behaviour of oxygen plasma-grown SiO2films annealed at high temperature†. International Journal of Electronics. 34(6). 737–740. 4 indexed citations
18.
McCaughan, Daniel V., et al.. (1973). Ion Neutralization Processes at Insulator Surfaces and Consequent Impurity Migration Effects in SiO2Films. Physical Review Letters. 30(13). 614–617. 91 indexed citations
19.
McCaughan, Daniel V., et al.. (1973). Low-energy ion bombardment of silicon dioxide films on silicon. Journal of Applied Physics. 44(5). 2008–2017. 27 indexed citations
20.
McCaughan, Daniel V., et al.. (1973). Low-energy ion bombardment of silicon dioxide films on silicon. II. Inert ambient annealing of degradation in MOS devices. Journal of Applied Physics. 44(7). 3182–3190. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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