Daniel V. McCaughan

514 total citations
27 papers, 377 citations indexed

About

Daniel V. McCaughan is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Daniel V. McCaughan has authored 27 papers receiving a total of 377 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 10 papers in Computational Mechanics and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Daniel V. McCaughan's work include Semiconductor materials and devices (17 papers), Ion-surface interactions and analysis (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). Daniel V. McCaughan is often cited by papers focused on Semiconductor materials and devices (17 papers), Ion-surface interactions and analysis (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). Daniel V. McCaughan collaborates with scholars based in United Kingdom, United States and India. Daniel V. McCaughan's co-authors include R.A. Kushner, C. W. White, D.L. Simms, N. H. Tolk, B. C. Wonsiewicz, Ronald L. Meek, H. C. Webber, J Geddes, C. W. White and Eoin W. Gray and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Daniel V. McCaughan

26 papers receiving 338 citations

Peers

Countries citing papers authored by Daniel V. McCaughan

Since Specialization

Citations

This map shows the geographic impact of Daniel V. McCaughan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel V. McCaughan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel V. McCaughan more than expected).

Fields of papers citing papers by Daniel V. McCaughan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel V. McCaughan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel V. McCaughan. The network helps show where Daniel V. McCaughan may publish in the future.

Co-authorship network of co-authors of Daniel V. McCaughan

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel V. McCaughan. A scholar is included among the top collaborators of Daniel V. McCaughan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel V. McCaughan. Daniel V. McCaughan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Title	Journal	Authors	Indexed citations
1	Pulsed laser modification of SiO2/Si interface properties and minority-carrier lifetime	Applied Physics Letters	H. C. Webber, Daniel V. McCaughan et al.	6
2	Effects of bombardment by low-energy neutral particles on silicon dioxide films	Journal of Applied Physics	Daniel V. McCaughan, R.A. Kushner et al.	8
3	Integrating-input technique for c.c.d.	Electronics Letters	C.J. Oliver, Daniel V. McCaughan et al.	1
4	Scratch filter using c.c.d.s	Electronics Letters	Daniel V. McCaughan et al.	0
5	A processor for pulse-doppler radar	IEEE Transactions on Electron Devices	Daniel V. McCaughan et al.	4
6	A processor for pulse-Doppler radar	IEEE Journal of Solid-State Circuits	Daniel V. McCaughan et al.	10
7	Phase-referred input: a simple new linear c.c.d. input method	Electronics Letters	Daniel V. McCaughan et al.	2
8	Effects of nonradiative de-excitation of excited sputtered atoms near silicon and silicon dioxide surfaces	Surface Science	C. W. White, D.L. Simms et al.	57
9	Arc duration reduction in an organic atmosphere by electrode implantation of low ionization potential materials	Journal of Applied Physics	Eoin W. Gray, Daniel V. McCaughan et al.	5
10	Degradation of oxide films due to radiation effects in exposure to plasmas in sputter deposition and backsputtering	Proceedings of the IEEE	Daniel V. McCaughan, R.A. Kushner	17
11	Complete Removal of Sodium from Silicon Dioxide Films by Formation of Phosphosilicate Glass	Journal of The Electrochemical Society	Daniel V. McCaughan, R.A. Kushner et al.	3
12	Mobilization of sodium in SiO2films by ion bombardment	Physical review. B, Solid state	R.A. Kushner, Daniel V. McCaughan et al.	40
13	Ion migration effects in r.f. “sputter cleaning” of dielectric films	Thin Solid Films	Daniel V. McCaughan, R.A. Kushner	5
14	Implantation of Argon into SiO[sub 2] Films Due to Backsputter Cleaning	Journal of The Electrochemical Society	Ronald L. Meek, Daniel V. McCaughan et al.	13
15	Problems in the analysis of semiconductor device materials exposed to ionizing radiation	Proceedings of the IEEE	Péter Schmidt, Daniel V. McCaughan et al.	1
16	An Apparatus for Study of Secondary Ions from Ion Bombardment of a Metal Surface	Review of Scientific Instruments	Daniel V. McCaughan, J Geddes et al.	2
17	Dielectric strength and interface-state behaviour of oxygen plasma-grown SiO₂films annealed at high temperature†	International Journal of Electronics	Daniel V. McCaughan et al.	4
18	Ion Neutralization Processes at Insulator Surfaces and Consequent Impurity Migration Effects in SiO2Films	Physical Review Letters	Daniel V. McCaughan, R.A. Kushner et al.	91
19	Low-energy ion bombardment of silicon dioxide films on silicon	Journal of Applied Physics	Daniel V. McCaughan et al.	27
20	Low-energy ion bombardment of silicon dioxide films on silicon. II. Inert ambient annealing of degradation in MOS devices	Journal of Applied Physics	Daniel V. McCaughan et al.	10

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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