Chao Han

604 total citations
57 papers, 411 citations indexed

About

Chao Han is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Chao Han has authored 57 papers receiving a total of 411 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in Chao Han's work include Silicon Carbide Semiconductor Technologies (23 papers), Semiconductor materials and devices (13 papers) and Semiconductor materials and interfaces (10 papers). Chao Han is often cited by papers focused on Silicon Carbide Semiconductor Technologies (23 papers), Semiconductor materials and devices (13 papers) and Semiconductor materials and interfaces (10 papers). Chao Han collaborates with scholars based in China, United States and Canada. Chao Han's co-authors include Adit D. Singh, Yimen Zhang, Yuming Zhang, Qingwen Song, Xiao-Yan Tang, W. Zhu, Yin-Chen He, Yimeng Zhang, Johannes S. Hofmann and Hao Yuan and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Power Electronics and IEEE Access.

In The Last Decade

Chao Han

50 papers receiving 394 citations

Peers

Chao Han
T. Tanigawa Japan
Jamil Kawa United States
Ryohei Kobayashi Japan
Ranjit Gharpurey United States
P.E. Cottrell United States
F.R. Palomo Spain
Leif Scheick United States
S. Odanaka Japan
R.J. Lomax United States
C. Prasad United States
T. Tanigawa Japan
Chao Han
Citations per year, relative to Chao Han Chao Han (= 1×) peers T. Tanigawa

Countries citing papers authored by Chao Han

Since Specialization
Citations

This map shows the geographic impact of Chao Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chao Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chao Han more than expected).

Fields of papers citing papers by Chao Han

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chao Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chao Han. The network helps show where Chao Han may publish in the future.

Co-authorship network of co-authors of Chao Han

This figure shows the co-authorship network connecting the top 25 collaborators of Chao Han. A scholar is included among the top collaborators of Chao Han based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chao Han. Chao Han is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhou, Yu, et al.. (2025). Analysis and fabrication of a SiC super-junction termination structure in a state of charge imbalance. Science China Information Sciences. 68(4).
2.
3.
Han, Chao, et al.. (2024). Deciphering Peritectic Solidification Characteristics for the Simulated Weld Metal of EH36 Shipbuilding Steel. Metallurgical and Materials Transactions A. 55(9). 3199–3207. 1 indexed citations
4.
Han, Chao, et al.. (2024). SiO2-Bearing Fluxes Induced Solidification Path Transition in Weld Metals of EH36 Shipbuilding Steel. Metallurgical and Materials Transactions B. 55(6). 4906–4914. 1 indexed citations
5.
Zhang, Zhiwen, et al.. (2024). Experimental and Simulation Study of Single-Event Leakage Current Degradation and Damage Mechanism in 4H-SiC PiN Diodes. IEEE Transactions on Electron Devices. 71(8). 4891–4896. 5 indexed citations
6.
Yuan, Hao, et al.. (2024). Long-Term Lifetime Evolution Mechanism of 4H-SiC MOSFETs Under Nitric Oxide Annealing. IEEE Transactions on Electron Devices. 71(12). 7682–7688. 1 indexed citations
7.
Zhang, Zhiwen, et al.. (2024). Experimental Demonstration of the Improved Single-Event Irradiation Hardness of Split-Gate 4H-SiC Power MOSFET With Integrated the P+N+ Structure. IEEE Electron Device Letters. 45(12). 2495–2498. 1 indexed citations
8.
9.
Zhu, W., Chao Han, Emilie Huffman, Johannes S. Hofmann, & Yin-Chen He. (2023). Uncovering Conformal Symmetry in the 3D Ising Transition: State-Operator Correspondence from a Quantum Fuzzy Sphere Regularization. Physical Review X. 13(2). 32 indexed citations
10.
Yuan, Hao, Xiao-Yan Tang, Chao Han, et al.. (2023). Development of 400 V-Tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode With Linear Energy Transfer Upto 83.5 MeV⋅cm2/mg. IEEE Electron Device Letters. 44(8). 1252–1255. 3 indexed citations
11.
Han, Chao, et al.. (2023). Role of SiO2 upon Weld Metal Inclusion Characteristics in EH36 Shipbuilding Steels Treated by CaF2–SiO2 Fluxes. Metallurgical and Materials Transactions B. 54(3). 989–995. 10 indexed citations
12.
Han, Chao, et al.. (2023). Conformal four-point correlators of the three-dimensional Ising transition via the quantum fuzzy sphere. Physical review. B.. 108(23). 18 indexed citations
13.
Song, Qingwen, Zeyulin Zhang, Xiao-Yan Tang, et al.. (2022). Fabrication High-Temperature 4H-SiC Schottky UV Photodiodes by O2 Plasma Pre-Treatment Technology. IEEE Photonics Technology Letters. 34(17). 911–914. 9 indexed citations
14.
Guo, Hui, et al.. (2022). Design of High-Efficiency SiC Betavoltaic Battery Structures With Reduced Impact of Near-Surface Recombination Based on Accurate Modeling. IEEE Transactions on Electron Devices. 69(12). 7141–7146. 5 indexed citations
15.
Song, Qingwen, Xiao-Yan Tang, Zeyulin Zhang, et al.. (2021). Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity. IEEE Transactions on Electron Devices. 68(11). 5662–5665. 21 indexed citations
16.
Tang, Xiao-Yan, Qingwen Song, Chao Han, et al.. (2021). Demonstration of Picosecond 4H-SiC Diode Avalanche Shaper With Voltage Rise Rate of 11.14 kV/ns and Peak Power Density of 62 MW/cm$^2$. IEEE Transactions on Power Electronics. 37(4). 3724–3727. 4 indexed citations
17.
He, Yanjing, Hongliang Lv, Xiao-Yan Tang, et al.. (2019). Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature. Journal of Alloys and Compounds. 805. 999–1003. 11 indexed citations
18.
Song, Qingwen, Hao Yuan, Chao Han, et al.. (2019). Reverse-Bias Stress-Induced Electrical Parameters Instability in 4H-SiC JBS Diodes Terminated Nonequidistance FLRs. IEEE Transactions on Electron Devices. 66(9). 3935–3939. 9 indexed citations
19.
Song, Qingwen, Chao Han, Yimeng Zhang, et al.. (2016). 4H-SiC Trench MOSFET With L-Shaped Gate. IEEE Electron Device Letters. 37(4). 463–466. 52 indexed citations
20.
Han, Chao, Yuming Zhang, Qingwen Song, et al.. (2015). Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface. Chinese Physics B. 24(11). 117304–117304. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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