C. Durand

601 total citations
30 papers, 177 citations indexed

About

C. Durand is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, C. Durand has authored 30 papers receiving a total of 177 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in C. Durand's work include Radio Frequency Integrated Circuit Design (13 papers), Advanced MEMS and NEMS Technologies (8 papers) and Mechanical and Optical Resonators (7 papers). C. Durand is often cited by papers focused on Radio Frequency Integrated Circuit Design (13 papers), Advanced MEMS and NEMS Technologies (8 papers) and Mechanical and Optical Resonators (7 papers). C. Durand collaborates with scholars based in France, Switzerland and India. C. Durand's co-authors include F. Casset, D. Gloria, P. Ancey, Frédéric Gianesello, L. Buchaillot, Adrian M. Ionescu, E. Ollier, N. Abelé, Bernard Legrand and Laurent Duraffourg and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

C. Durand

25 papers receiving 165 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Durand France 8 160 82 72 9 7 30 177
Andrew R. Brown United Kingdom 9 284 1.8× 43 0.5× 51 0.7× 8 0.9× 9 1.3× 23 294
Hongzhi Sun United States 10 321 2.0× 167 2.0× 76 1.1× 22 2.4× 5 0.7× 19 339
Yungseon Eo South Korea 12 330 2.1× 36 0.4× 28 0.4× 10 1.1× 16 2.3× 46 349
Jesse Moody United States 12 319 2.0× 60 0.7× 149 2.1× 27 3.0× 6 0.9× 23 346
Jean‐Luc Gautier France 9 268 1.7× 64 0.8× 43 0.6× 10 1.1× 3 0.4× 33 286
J. Adkisson United States 10 181 1.1× 43 0.5× 16 0.2× 2 0.2× 9 1.3× 28 189
Andrej Rumiantsev Germany 12 417 2.6× 22 0.3× 59 0.8× 11 1.2× 7 1.0× 36 440
Gerard J. M. Wienk Netherlands 11 402 2.5× 20 0.2× 137 1.9× 11 1.2× 7 1.0× 18 408
Taeksang Song South Korea 13 490 3.1× 72 0.9× 184 2.6× 9 1.0× 3 0.4× 27 498
Daniel Pasquet France 10 280 1.8× 53 0.6× 35 0.5× 6 0.7× 4 0.6× 56 308

Countries citing papers authored by C. Durand

Since Specialization
Citations

This map shows the geographic impact of C. Durand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Durand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Durand more than expected).

Fields of papers citing papers by C. Durand

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Durand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Durand. The network helps show where C. Durand may publish in the future.

Co-authorship network of co-authors of C. Durand

This figure shows the co-authorship network connecting the top 25 collaborators of C. Durand. A scholar is included among the top collaborators of C. Durand based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Durand. C. Durand is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Durand, C., et al.. (2023). 120‐GHz 2‐bit reflection‐type phase shifter based on PIN diodes switched‐lines. Electronics Letters. 59(10).
2.
Durand, C., Philippe Galy, A. Juge, et al.. (2022). RF performances at cryogenic temperature of inductors integrated in a FDSOI technology. Solid-State Electronics. 194. 108285–108285. 2 indexed citations
3.
4.
Gianesello, Frédéric, et al.. (2021). 85 fs RON×COFF and CP1dB@28GHz > 25dBm Innovative PIN Diode Integrated in 55 nm BiCMOS Technology Targeting mmW 5G and 6G Front End Module. SPIRE - Sciences Po Institutional REpository. 40–43. 1 indexed citations
5.
Braud, Flavie, Étienne Okada, J.F. Robillard, et al.. (2021). Large-area femtosecond laser milling of silicon employing trench analysis. Optics & Laser Technology. 138. 106866–106866. 8 indexed citations
6.
Vincent, Loı̈c, Sylvie Lépilliet, Christophe Gaquière, et al.. (2020). Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band. IEEE Transactions on Electron Devices. 67(6). 2263–2269. 6 indexed citations
7.
Gaquière, Christophe, et al.. (2019). MOM Capacitance Characterization in G-Band using On-wafer 3D-TRL Calibration. 136–139. 2 indexed citations
8.
9.
Gianesello, Frédéric, et al.. (2017). Sub-THz source integrated in low-cost Silicon Photonic technology targeting 40 Gb/s wireless links. 77–80. 2 indexed citations
10.
Gianesello, Frédéric, C. Durand, & D. Gloria. (2014). 0.35 dB loss 20 dB coupling directional coupler integrated in 130 nm CMOS SOI technology targeting 3G PA SOC. 29–31. 3 indexed citations
11.
Gianesello, Frédéric, C. Durand, Romain Pilard, et al.. (2011). Integration of cellular front end modules on advanced high resistivity SOI RF CMOS technology. 29–32. 3 indexed citations
12.
Durand, C., Frédéric Gianesello, & D. Gloria. (2011). Innovative 8-shaped inductors integrated in an advanced BiCMOS technology. 81–84. 8 indexed citations
13.
Colinet, Éric, C. Durand, Laurent Duraffourg, et al.. (2009). Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process. IEEE Journal of Solid-State Circuits. 44(1). 247–257. 26 indexed citations
14.
Ollier, E., Philippe Andreucci, Laurent Duraffourg, et al.. (2008). NEMS based on top-down technologies: from stand-alone NEMS to VLSI NEMS & NEMS-CMOS integration. apl 92. 1–6. 4 indexed citations
15.
Durand, C., F. Casset, N. Abelé, et al.. (2008). In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives. IEEE Electron Device Letters. 29(5). 494–496. 36 indexed citations
16.
Casset, F., C. Durand, L. Buchaillot, et al.. (2008). Electromechanical resonator detection enhancement by the use of a movable electrode. 1–5. 1 indexed citations
17.
Colinet, Éric, C. Durand, P. Audebert, et al.. (2008). Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process. 332–617. 4 indexed citations
18.
Ollier, E., Laurent Duraffourg, Éric Colinet, et al.. (2008). Lateral MOSFET transistor with movable gate for NEMS devices compatible with “In-IC” integration. apl 86. 764–769. 3 indexed citations
19.
Durand, C., et al.. (2007). Silicon on nothing MEMS electromechanical resonator. Microsystem Technologies. 14(7). 1027–1033. 19 indexed citations
20.
Durand, C., et al.. (2000). Forward error correction of FSK alphabets for noncoherent transmissions over AWGN channel. IEEE Communications Letters. 4(10). 318–320. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Andrew R. Brown Breakdown of academic impact, for papers by Hongzhi Sun Breakdown of academic impact, for papers by Yungseon Eo Breakdown of academic impact, for papers by Jesse Moody Breakdown of academic impact, for papers by Jean‐Luc Gautier Breakdown of academic impact, for papers by J. Adkisson Breakdown of academic impact, for papers by Andrej Rumiantsev Breakdown of academic impact, for papers by Gerard J. M. Wienk Breakdown of academic impact, for papers by Taeksang Song Breakdown of academic impact, for papers by Daniel Pasquet
Rankless by CCL
2026