B.M. Grossman

432 total citations
8 papers, 332 citations indexed

About

B.M. Grossman is a scholar working on Electrical and Electronic Engineering, Numerical Analysis and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B.M. Grossman has authored 8 papers receiving a total of 332 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Electrical and Electronic Engineering, 1 paper in Numerical Analysis and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in B.M. Grossman's work include Advancements in Semiconductor Devices and Circuit Design (6 papers), Silicon Carbide Semiconductor Technologies (4 papers) and Silicon and Solar Cell Technologies (3 papers). B.M. Grossman is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (6 papers), Silicon Carbide Semiconductor Technologies (4 papers) and Silicon and Solar Cell Technologies (3 papers). B.M. Grossman collaborates with scholars based in United States. B.M. Grossman's co-authors include E. M. Buturla, P.E. Cottrell, S.E. Laux, M. Hargrove, A. G. Schrott, T. Doderer, James A. Misewich, Arunava Gupta, Pratap Pattnaik and D. M. Newns and has published in prestigious journals such as IEEE Transactions on Electron Devices, IBM Journal of Research and Development and IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

In The Last Decade

B.M. Grossman

8 papers receiving 313 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B.M. Grossman United States	6	290	46	39	24	17	8	332
E. M. Buturla United States	8	403 1.4×	57 1.2×	36 0.9×	17 0.7×	27 1.6×	14	437
E. Lyumkis United States	10	287 1.0×	55 1.2×	35 0.9×	51 2.1×	8 0.5×	26	344
Christoph Pflaum Germany	10	228 0.8×	122 2.7×	121 3.1×	29 1.2×	9 0.5×	84	348
S. Odanaka Japan	17	700 2.4×	88 1.9×	29 0.7×	47 2.0×	32 1.9×	74	742
B.J. Mulvaney United States	10	243 0.8×	130 2.8×	41 1.1×	46 1.9×	3 0.2×	36	305
M. Lorenzini Belgium	10	264 0.9×	32 0.7×	6 0.2×	36 1.5×	12 0.7×	34	305
T. Toyabe Japan	16	945 3.3×	78 1.7×	19 0.5×	34 1.4×	56 3.3×	53	988
Michael W. Beattie United States	11	304 1.0×	61 1.3×	6 0.2×	10 0.4×	35 2.1×	20	312
A. Kamal India	8	176 0.6×	161 3.5×	9 0.2×	42 1.8×	8 0.5×	34	307
Khaled Ben Ali Belgium	11	226 0.8×	51 1.1×	4 0.1×	51 2.1×	6 0.4×	34	332

Countries citing papers authored by B.M. Grossman

Since Specialization

Citations

This map shows the geographic impact of B.M. Grossman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.M. Grossman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.M. Grossman more than expected).

Fields of papers citing papers by B.M. Grossman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.M. Grossman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.M. Grossman. The network helps show where B.M. Grossman may publish in the future.

Co-authorship network of co-authors of B.M. Grossman

This figure shows the co-authorship network connecting the top 25 collaborators of B.M. Grossman. A scholar is included among the top collaborators of B.M. Grossman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.M. Grossman. B.M. Grossman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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8 of 8 papers shown

1.

Buturla, E. M., et al.. (2000). Finite-element analysis of semiconductor devices: The FIELDAY program. IBM Journal of Research and Development. 44(1.2). 142–156. 5 indexed citations

2.

Newns, D. M., T. Doderer, C. C. Tsuei, et al.. (2000). The Mott Transition Field Effect Transistor: A Nanodevice?. Journal of Electroceramics. 4(2-3). 339–344. 19 indexed citations

3.

Laux, S.E. & B.M. Grossman. (1985). A general control-volume formulation for modeling impact ionization in semiconductor transport. IEEE Transactions on Electron Devices. 32(10). 2076–2082. 20 indexed citations

4.

Laux, S.E. & B.M. Grossman. (1985). A General Control-Volume Formulation for Modeling Impact Ionization in Semiconductor Transport. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 4(4). 520–526. 14 indexed citations

5.

Grossman, B.M., E. M. Buturla, & P.E. Cottrell. (1985). Finite-element solution of the semiconductor transport equations. 697–711. 2 indexed citations

6.

Grossman, B.M. & M. Hargrove. (1983). Numerical solution of the semiconductor transport equations with current boundary conditions. IEEE Transactions on Electron Devices. 30(9). 1092–1096. 18 indexed citations

7.

Buturla, E. M., et al.. (1981). Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program. IBM Journal of Research and Development. 25(4). 218–231. 236 indexed citations

8.

Buturla, E. M., et al.. (1980). Three-dimensional finite element simulation of semiconductor devices. 76–77. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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