Andreas Gällström

591 total citations
35 papers, 426 citations indexed

About

Andreas Gällström is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Andreas Gällström has authored 35 papers receiving a total of 426 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 10 papers in Electronic, Optical and Magnetic Materials and 7 papers in Materials Chemistry. Recurrent topics in Andreas Gällström's work include Silicon Carbide Semiconductor Technologies (26 papers), Semiconductor materials and devices (19 papers) and Copper Interconnects and Reliability (8 papers). Andreas Gällström is often cited by papers focused on Silicon Carbide Semiconductor Technologies (26 papers), Semiconductor materials and devices (19 papers) and Copper Interconnects and Reliability (8 papers). Andreas Gällström collaborates with scholars based in Sweden, Hungary and Germany. Andreas Gällström's co-authors include Erik Janzén, Nguyên Tiên Són, Ádám Gali, Björn Magnusson, Patrick Carlsson, Stefano Leone, Anne Henry, Ivan G. Ivanov, John Folkesson and Takeshi Ohshima and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Andreas Gällström

31 papers receiving 418 citations

Peers

Andreas Gällström

EEE

AMPO

EOMM

CMP

Jun Weng China

F. Garoi Romania

Tomi Koskinen Finland

Donard de Cogan United Kingdom

Kang Li China

Canglong Wang China

Keith G. Lyon United States

Benedikt Ernst Germany

J. Smith United States

Jun Weng China

Andreas Gällström

100 ×0.3

EEE

111 ×0.5

42 ×0.4

AMPO

37 ×0.8

EOMM

15 ×0.5

CMP

Citations per year, relative to Andreas Gällström Andreas Gällström (= 1×) peers Jun Weng

Countries citing papers authored by Andreas Gällström

Since Specialization

Citations

This map shows the geographic impact of Andreas Gällström's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andreas Gällström with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andreas Gällström more than expected).

Fields of papers citing papers by Andreas Gällström

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andreas Gällström. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andreas Gällström. The network helps show where Andreas Gällström may publish in the future.

Co-authorship network of co-authors of Andreas Gällström

This figure shows the co-authorship network connecting the top 25 collaborators of Andreas Gällström. A scholar is included among the top collaborators of Andreas Gällström based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Andreas Gällström. Andreas Gällström is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Larsson, Christer & Andreas Gällström. (2024). High Resolution ISAR Imaging Methods for RCS Data Analysis. Lund University Publications (Lund University). 1–5.

Maki, Atsuto, et al.. (2022). Optimization Method for Wide Beam Sonar Transmit Beamforming. Sensors. 22(19). 7526–7526. 6 indexed citations

Gällström, Andreas, et al.. (2019). Enhanced sonar image resolution using compressive sensing modelling. KTH Publication Database DiVA (KTH Royal Institute of Technology). 995–999. 3 indexed citations

Gällström, Andreas, et al.. (2018). Object Recognition in Forward Looking Sonar Images using Transfer Learning. KTH Publication Database DiVA (KTH Royal Institute of Technology). 1–6. 25 indexed citations

Yakimova, Rositsa, Ivan G. Ivanov, Lasse Vines, et al.. (2017). (Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes. ECS Transactions. 80(7). 107–115.

Gällström, Andreas, Björn Magnusson, Stefano Leone, et al.. (2015). Optical properties and Zeeman spectroscopy of niobium in silicon carbide. Physical Review B. 92(7). 4 indexed citations

Gällström, Andreas. (2015). Optical Characterization of Deep Level Defects in SiC. 1 indexed citations

Gällström, Andreas, Ivan G. Ivanov, R. L. Coble, et al.. (2012). Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy. Materials science forum. 717-720. 259–262. 1 indexed citations

Són, Nguyên Tiên, Viktor Ivády, Ádám Gali, et al.. (2012). Identification of Niobium in 4H-SiC by EPR and <i>Ab Initio</i> Studies. Materials science forum. 717-720. 217–220. 2 indexed citations

10.

Ivády, Viktor, Andreas Gällström, Nguyên Tiên Són, Erik Janzén, & Ádám Gali. (2011). Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study. Physical Review Letters. 107(19). 195501–195501. 18 indexed citations

11.

Gällström, Andreas, Björn Magnusson, Franziska C. Beyer, et al.. (2011). Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC. Physica B Condensed Matter. 407(10). 1462–1466. 10 indexed citations

12.

Beyer, Franziska C., Carl Hemmingsson, Andreas Gällström, et al.. (2011). Deep levels in tungsten doped n-type 3C–SiC. Applied Physics Letters. 98(15). 16 indexed citations

13.

Beyer, Franziska C., Carl Hemmingsson, Stefano Leone, et al.. (2011). Deep levels in iron doped n- and p-type 4H-SiC. Journal of Applied Physics. 110(12). 23 indexed citations

14.

Gali, Ádám, Andreas Gällström, Nguyên Tiên Són, & Erik Janzén. (2010). Theory of Neutral Divacancy in SiC: A Defect for Spintronics. Materials science forum. 645-648. 395–397. 34 indexed citations

15.

Hsiao, Ching‐Lien, Ting‐Wei Liu, Chien‐Ting Wu, et al.. (2008). High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment. Applied Physics Letters. 92(11). 24 indexed citations

16.

Són, Nguyên Tiên, Patrick Carlsson, Andreas Gällström, Björn Magnusson, & Erik Janzén. (2008). Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates. Materials science forum. 600-603. 401–404. 1 indexed citations

17.

Pedersen, Henrik, Stefano Leone, Anne Henry, et al.. (2008). Very high crystalline quality of thick 4H‐SiC epilayers grown from methyltrichlorosilane (MTS). physica status solidi (RRL) - Rapid Research Letters. 2(4). 188–190. 24 indexed citations

18.

Són, Nguyên Tiên, Patrick Carlsson, Andreas Gällström, Björn Magnusson, & Erik Janzén. (2007). Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC. Applied Physics Letters. 91(20). 11 indexed citations

19.

Són, Nguyên Tiên, Patrick Carlsson, Andreas Gällström, Björn Magnusson, & Erik Janzén. (2007). Prominent defects in semi-insulating SiC substrates. Physica B Condensed Matter. 401-402. 67–72. 11 indexed citations

20.

Gällström, Andreas, Björn Magnusson, Patrick Carlsson, et al.. (2007). Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC. Materials science forum. 556-557. 371–374. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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