А.И. Титов

1.1k total citations
69 papers, 837 citations indexed

About

А.И. Титов is a scholar working on Computational Mechanics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, А.И. Титов has authored 69 papers receiving a total of 837 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Computational Mechanics, 47 papers in Electrical and Electronic Engineering and 25 papers in Condensed Matter Physics. Recurrent topics in А.И. Титов's work include Ion-surface interactions and analysis (47 papers), GaN-based semiconductor devices and materials (25 papers) and Semiconductor materials and devices (23 papers). А.И. Титов is often cited by papers focused on Ion-surface interactions and analysis (47 papers), GaN-based semiconductor devices and materials (25 papers) and Semiconductor materials and devices (23 papers). А.И. Титов collaborates with scholars based in Russia, United States and Australia. А.И. Титов's co-authors include S. O. Kucheyev, Alexander Azarov, P. A. Karaseov, C. Jagadish, J. S. Williams, Jin Zou, M. J. Nobes, C. Christodoulides, G. Carter and A. Kuronen and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

А.И. Титов

68 papers receiving 816 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
А.И. Титов Russia 18 484 397 376 279 210 69 837
Petter Ström Sweden 13 217 0.4× 123 0.3× 391 1.0× 46 0.2× 76 0.4× 39 656
C. N. Afonso Spain 15 199 0.4× 144 0.4× 318 0.8× 71 0.3× 141 0.7× 34 611
M. Hayes South Africa 15 548 1.1× 107 0.3× 674 1.8× 122 0.4× 351 1.7× 47 906
Yuriy Kudriavtsev Mexico 12 314 0.6× 101 0.3× 280 0.7× 51 0.2× 53 0.3× 48 470
Ratnesh Gupta India 14 243 0.5× 158 0.4× 216 0.6× 53 0.2× 116 0.6× 56 685
J.-S. Kim South Korea 16 180 0.4× 208 0.5× 284 0.8× 78 0.3× 95 0.5× 48 585
Rantej Bali Germany 15 138 0.3× 88 0.2× 232 0.6× 191 0.7× 198 0.9× 48 606
G. A. Petersen United States 15 483 1.0× 137 0.3× 261 0.7× 399 1.4× 219 1.0× 31 802
Dileep Kumar India 14 207 0.4× 129 0.3× 250 0.7× 93 0.3× 290 1.4× 88 681
M. Voelskow Germany 18 918 1.9× 200 0.5× 621 1.7× 95 0.3× 76 0.4× 124 1.2k

Countries citing papers authored by А.И. Титов

Since Specialization
Citations

This map shows the geographic impact of А.И. Титов's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by А.И. Титов with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites А.И. Титов more than expected).

Fields of papers citing papers by А.И. Титов

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by А.И. Титов. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by А.И. Титов. The network helps show where А.И. Титов may publish in the future.

Co-authorship network of co-authors of А.И. Титов

This figure shows the co-authorship network connecting the top 25 collaborators of А.И. Титов. A scholar is included among the top collaborators of А.И. Титов based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with А.И. Титов. А.И. Титов is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Karaseov, P. A., et al.. (2024). Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3 by Atomic and Molecular Ions. Semiconductors. 58(3). 279–283. 1 indexed citations
2.
Karaseov, P. A., et al.. (2024). Non-linear effects in α-Ga2O3 radiation phenomena. APL Materials. 12(11). 3 indexed citations
3.
Надточенко, В. А., S. Yu. Kochev, F. E. Gostev, et al.. (2023). Fast kinetic laser spectroscopy of the exciton dynamics during photocatalytic ZnCdS/ZnCdS/ZnS QDs mediated hydrogen production. Applied Physics A. 129(2). 3 indexed citations
4.
5.
Титов, А.И., et al.. (2023). Molecular-Dynamics Simulation of Silicon Irradiation with 2–8 keV C60 Fullerene Ions. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 17(1). 66–71. 2 indexed citations
6.
Титов, А.И., et al.. (2022). Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms. Journal of Physics D Applied Physics. 55(17). 175103–175103. 1 indexed citations
7.
Karaseov, P. A., А.И. Титов, Mohammad W. Ullah, et al.. (2017). Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations. Journal of Physics D Applied Physics. 50(50). 505110–505110. 4 indexed citations
8.
Karaseov, P. A., А.И. Титов, Mohammad W. Ullah, et al.. (2016). Experimental study and MD simulation of damage formation in GaN under atomic and molecular ion irradiation. Vacuum. 129. 166–169. 11 indexed citations
9.
Tripathi, Ajay, et al.. (2014). Modification of properties of metal containing carbon films by swift heavy ion irradiation. 268. 1–2. 1 indexed citations
10.
Pathak, A. P., et al.. (2012). Synthesis and tailoring of GaN nanocrystals at room temperature by RF magnetron sputtering. Radiation effects and defects in solids. 167(9). 659–665. 5 indexed citations
11.
Karaseov, P. A., et al.. (2010). Influence of ion irradiation on internal residual stress in DLC films. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 268(19). 3107–3110. 16 indexed citations
12.
Kucheyev, S. O., et al.. (2009). Energy spike effects in ion-bombarded GaN. Journal of Physics D Applied Physics. 42(8). 85309–85309. 28 indexed citations
13.
Azarov, Alexander, А.И. Титов, P. A. Karaseov, & Anders Hallén. (2009). Effect of collision cascade density on radiation damage in SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 267(8-9). 1247–1250. 11 indexed citations
14.
Титов, А.И., et al.. (2007). Damage buildup and the molecular effect in Si bombarded with PF cluster ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 256(1). 207–210. 19 indexed citations
15.
Azarov, Alexander & А.И. Титов. (2007). Accumulation of structural defects in silicon irradiated with PF n + cluster ions with medium energies. Semiconductors. 41(1). 5–10. 5 indexed citations
16.
Титов, А.И., et al.. (2003). Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 212. 169–178. 15 indexed citations
17.
Титов, А.И. & S. O. Kucheyev. (2002). Model for electrical isolation of GaN by light-ion bombardment. Journal of Applied Physics. 92(10). 5740–5744. 18 indexed citations
18.
Christodoulides, C., et al.. (1980). The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors. Nuclear Instruments and Methods. 168(1-3). 283–288. 25 indexed citations
19.
Титов, А.И., C. Christodoulides, G. Carter, & M. J. Nobes. (1979). The depth distribution of disorder produced by room temperature 40 keV N+ion irradiation of silicon. Radiation Effects. 41(2). 107–111. 18 indexed citations
20.
Титов, А.И., et al.. (1977). Formation of a surface peak of structure defects formed by ion irradiation. [50 keV nitrogen ions]. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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