T.M. Parrill

491 total citations
18 papers, 427 citations indexed

About

T.M. Parrill is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, T.M. Parrill has authored 18 papers receiving a total of 427 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 6 papers in Electronic, Optical and Magnetic Materials and 6 papers in Materials Chemistry. Recurrent topics in T.M. Parrill's work include Semiconductor materials and devices (9 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Copper Interconnects and Reliability (5 papers). T.M. Parrill is often cited by papers focused on Semiconductor materials and devices (9 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Copper Interconnects and Reliability (5 papers). T.M. Parrill collaborates with scholars based in United States, Taiwan and Switzerland. T.M. Parrill's co-authors include Y. W. Chung, R. Kaplan, V. M. Bermudez, Yip-Wah Chung, Aditya Agarwal, H.-J. Gossmann, L. Rubin, L. Gignac, J. M. Poate and G. V. Chandrashekhar and has published in prestigious journals such as Surface Science, Thin Solid Films and Solid State Communications.

In The Last Decade

T.M. Parrill

18 papers receiving 416 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T.M. Parrill United States 10 279 179 90 60 54 18 427
Svetlana Rogojevic United States 8 158 0.6× 176 1.0× 128 1.4× 53 0.9× 44 0.8× 9 321
Haijiang Yu China 12 359 1.3× 142 0.8× 109 1.2× 177 3.0× 104 1.9× 17 632
V. G. Polovinkin Russia 7 334 1.2× 261 1.5× 263 2.9× 89 1.5× 33 0.6× 32 568
Benjamin French United States 15 366 1.3× 260 1.5× 181 2.0× 88 1.5× 22 0.4× 25 527
L.G. Gosset France 12 445 1.6× 209 1.2× 187 2.1× 65 1.1× 28 0.5× 37 508
Yoshinori Akamatsu Japan 10 56 0.2× 128 0.7× 42 0.5× 45 0.8× 77 1.4× 19 359
Margherita Zanini United States 11 310 1.1× 290 1.6× 40 0.4× 101 1.7× 14 0.3× 23 493
M. Azizan France 12 235 0.8× 237 1.3× 41 0.5× 151 2.5× 63 1.2× 39 431
Haruo Yokomichi Japan 14 386 1.4× 534 3.0× 60 0.7× 28 0.5× 20 0.4× 49 620
I. Naik India 11 186 0.7× 379 2.1× 131 1.5× 62 1.0× 13 0.2× 29 541

Countries citing papers authored by T.M. Parrill

Since Specialization
Citations

This map shows the geographic impact of T.M. Parrill's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.M. Parrill with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.M. Parrill more than expected).

Fields of papers citing papers by T.M. Parrill

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.M. Parrill. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.M. Parrill. The network helps show where T.M. Parrill may publish in the future.

Co-authorship network of co-authors of T.M. Parrill

This figure shows the co-authorship network connecting the top 25 collaborators of T.M. Parrill. A scholar is included among the top collaborators of T.M. Parrill based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.M. Parrill. T.M. Parrill is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Colombeau, B., et al.. (2012). Predictive process simulation of cryogenic implants for leading edge transistor design. AIP conference proceedings. 225–228. 3 indexed citations
2.
Graf, M., et al.. (2005). In situ beam angle measurement in a multi-wafer high current ion implanter. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 378–383. 2 indexed citations
3.
Gossmann, H.-J., Aditya Agarwal, T.M. Parrill, L. Rubin, & J. M. Poate. (2003). On the FinFET extension implant energy. IEEE Transactions on Nanotechnology. 2(4). 285–290. 20 indexed citations
4.
Parrill, T.M., et al.. (2002). Photoresist integrity during high energy implant. 178–181. 3 indexed citations
5.
Parrill, T.M., et al.. (2002). UV curing and photoresist outgassing in high energy implantation. 11. 182–185. 4 indexed citations
6.
Gignac, L., T.M. Parrill, & G. V. Chandrashekhar. (1995). Porous SiO 2 films analyzed by transmission electron microscopy. Thin Solid Films. 261(1-2). 59–63. 13 indexed citations
7.
Parrill, T.M.. (1994). Heat treatment of spun-on acid-catalyzed sol-gel silica films. Journal of materials research/Pratt's guide to venture capital sources. 9(3). 723–730. 49 indexed citations
8.
Parrill, T.M. & Y. W. Chung. (1992). Effects of initial silicon carbide surface composition on room temperature Au/β-SiC(001) interface formation. Surface Science. 271(3). 395–406. 7 indexed citations
9.
Parrill, T.M.. (1992). Transmission infrared study of acid-catalyzed sol-gel silica coatings during room ambient drying. Journal of materials research/Pratt's guide to venture capital sources. 7(8). 2230–2239. 71 indexed citations
10.
Parrill, T.M. & Y. W. Chung. (1991). Surface analysis of cubic silicon carbide (001). Surface Science. 243(1-3). 96–112. 104 indexed citations
11.
Parrill, T.M. & Yip-Wah Chung. (1988). Effects of initial surface composition on the interface chemistry of gold on cubic SiC(100). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1589–1592. 11 indexed citations
12.
Parrill, T.M., et al.. (1987). Characterization of the α-Sn/CdTe(110) interface by angle-resolved X-ray photoemission. Surface Science. 183(1-2). 113–122. 12 indexed citations
13.
Parrill, T.M. & V. M. Bermudez. (1987). Surface and bulk valence band photoemission of silicon carbide. Solid State Communications. 63(3). 231–235. 40 indexed citations
14.
Kaplan, R. & T.M. Parrill. (1986). Reduction of SiC surface oxides by a Ga molecular beam: LEED and electron spectroscopy studies. Surface Science Letters. 165(2-3). L45–L52. 6 indexed citations
15.
Bermudez, V. M., T.M. Parrill, & R. Kaplan. (1986). Electron-stimulated desorption of positive ions from hexagonal α-SiC. Surface Science. 173(1). 234–244. 10 indexed citations
16.
Kaplan, R. & T.M. Parrill. (1986). Reduction of SiC surface oxides by a Ga molecular beam: LEED and electron spectroscopy studies. Surface Science. 165(2-3). L45–L52. 59 indexed citations
17.
Parrill, T.M., et al.. (1985). Corrosion of 90-10 Cupronickel Alloys in Seawater Systems. JOM. 37(3). 28–30. 5 indexed citations
18.
Zeller, M., et al.. (1983). AES studies of phosphorus impurity on hydrogen embrittlement of Ni2Cr. Applications of Surface Science. 15(1-4). 129–148. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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