J. Monecke

2.0k total citations
99 papers, 1.7k citations indexed

About

J. Monecke is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, J. Monecke has authored 99 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Atomic and Molecular Physics, and Optics, 45 papers in Electrical and Electronic Engineering and 29 papers in Materials Chemistry. Recurrent topics in J. Monecke's work include Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and devices (20 papers) and Silicon Nanostructures and Photoluminescence (17 papers). J. Monecke is often cited by papers focused on Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and devices (20 papers) and Silicon Nanostructures and Photoluminescence (17 papers). J. Monecke collaborates with scholars based in Germany, Russia and Moldova. J. Monecke's co-authors include G. Irmer, M. Wenzel, I. M. Tiginyanu, Thomas Monecke, U. Kempe, Marco Sala, D. Wolf, B. H. Bairamov, V. V. Toporov and H.L. Hartnagel and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Monecke

94 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Monecke Germany 20 730 645 643 383 342 99 1.7k
J.C. Brice United Kingdom 25 1.2k 1.6× 559 0.9× 655 1.0× 315 0.8× 82 0.2× 75 2.2k
C. Norris United Kingdom 28 610 0.8× 1.6k 2.5× 468 0.7× 232 0.6× 380 1.1× 107 2.3k
B. A. Wechsler United States 20 958 1.3× 445 0.7× 761 1.2× 141 0.4× 98 0.3× 41 1.7k
Masaru Nakamura Japan 26 705 1.0× 1.2k 1.8× 1.2k 1.9× 316 0.8× 481 1.4× 186 2.3k
M. Gailhanou France 24 534 0.7× 514 0.8× 466 0.7× 209 0.5× 137 0.4× 100 1.5k
R. C. Linares United States 18 783 1.1× 414 0.6× 471 0.7× 88 0.2× 87 0.3× 41 1.3k
K. A. Wickersheim United States 21 682 0.9× 403 0.6× 648 1.0× 139 0.4× 97 0.3× 50 1.5k
P. Krishna India 17 810 1.1× 219 0.3× 601 0.9× 133 0.3× 106 0.3× 53 1.5k
B. P. Tonner United States 30 465 0.6× 743 1.2× 356 0.6× 208 0.5× 423 1.2× 74 2.0k

Countries citing papers authored by J. Monecke

Since Specialization
Citations

This map shows the geographic impact of J. Monecke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Monecke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Monecke more than expected).

Fields of papers citing papers by J. Monecke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Monecke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Monecke. The network helps show where J. Monecke may publish in the future.

Co-authorship network of co-authors of J. Monecke

This figure shows the co-authorship network connecting the top 25 collaborators of J. Monecke. A scholar is included among the top collaborators of J. Monecke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Monecke. J. Monecke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Irmer, G., et al.. (2004). Nanoporous InP studied by micro-Raman scattering. Science Access. 2(1). 496–497.
2.
Tiginyanu, I. M., et al.. (2000). Design of New Nonlinear Optical Materials Based on Porous III-V Compounds. physica status solidi (b). 221(1). 557–560. 7 indexed citations
3.
Verma, Prabhat, et al.. (1999). Phonon sidebands of electronic transitions in Li-doped CdS. Physical review. B, Condensed matter. 59(24). 15748–15752. 5 indexed citations
4.
Bairamov, B. H., Nils C. Fernelius, G. Irmer, et al.. (1999). Anisotropy of Optical and Electron Transport Properties of Atomic Ordering in CdGeAs2. MRS Proceedings. 607. 1 indexed citations
5.
Verma, Prabhat, et al.. (1999). Acoustic vibrations of semiconductor nanocrystals in doped glasses. Physical review. B, Condensed matter. 60(8). 5778–5785. 83 indexed citations
6.
Wenzel, M., G. Irmer, J. Monecke, & W. Siegel. (1998). Determination of the effective Hall factor in p-type semiconductors. Semiconductor Science and Technology. 13(5). 505–511. 11 indexed citations
7.
Bairamov, B. H., Yu. V. Rud, V. Yu. Rud’, et al.. (1998). Optoelectronic effects in p-CdGeAs2 single crystals and structures based on them. Physics of the Solid State. 40(2). 190–194. 2 indexed citations
8.
Siegel, W., et al.. (1997). Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs. Journal of Applied Physics. 82(8). 3832–3835. 8 indexed citations
9.
Irmer, G., J. Monecke, & M. Wenzel. (1997). The dielectric function in p-type III - V semiconductors. Journal of Physics Condensed Matter. 9(25). 5371–5382. 5 indexed citations
10.
Wenzel, M., G. Irmer, J. Monecke, & W. Siegel. (1997). Hole mobilities and the effective Hall factor in p-type GaAs. Journal of Applied Physics. 81(12). 7810–7816. 11 indexed citations
11.
Irmer, G., M. Wenzel, & J. Monecke. (1996). The temperature dependence of the LO(T) and TO(T) phonons in GaAs and InP. physica status solidi (b). 195(1). 85–95. 78 indexed citations
12.
Irmer, G., et al.. (1993). Second-order Raman scattering of Lo-phonon-plasmon modes in GaAs1-xPx. Solid State Communications. 87(2). 99–104. 2 indexed citations
13.
Pätzold, O., G. Irmer, & J. Monecke. (1992). High Spatial Resolution Raman Investigations: of Grown‐in Dislocations in Si‐doped GaAs. Crystal Research and Technology. 27(1). 1 indexed citations
14.
Monecke, J.. (1989). Microstructure Dependence of Material Properties of Composites. physica status solidi (b). 154(2). 805–813. 32 indexed citations
15.
Monecke, J., et al.. (1986). LO‐Phonon Modes Bound to Neutral Impurities in Polar Semiconductors. I. General Theory. physica status solidi (b). 138(2). 685–691. 7 indexed citations
16.
Irmer, G., J. Monecke, B. H. Bairamov, & V. V. Toporov. (1986). Phonon Shifts in GaP Due to Temperature and Pressure Rise Induced by a Laser Beam. physica status solidi (b). 136(2). 481–488. 5 indexed citations
17.
Irmer, G., J. Monecke, & W. Siegel. (1985). Raman scattering study of dopant homogeneity in GaP and GaAs single crystals. Crystal Research and Technology. 20(8). 1125–1131. 6 indexed citations
18.
Irmer, G., V. V. Toporov, B. H. Bairamov, & J. Monecke. (1983). Determination of the charge carrier concentration and mobility in n‐gap by Raman spectroscopy. physica status solidi (b). 119(2). 595–603. 138 indexed citations
19.
Monecke, J.. (1976). On the Phase Diagram of the Hubbard Model. physica status solidi (b). 74(1). 4 indexed citations
20.
Monecke, J.. (1972). Cluster Approach to the Conductivity in Narrow Energy Bands. physica status solidi (b). 51(1). 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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