W.J. Mosby

435 total citations
13 papers, 349 citations indexed

About

W.J. Mosby is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, W.J. Mosby has authored 13 papers receiving a total of 349 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 2 papers in Computational Mechanics. Recurrent topics in W.J. Mosby's work include Semiconductor Quantum Structures and Devices (9 papers), Semiconductor Lasers and Optical Devices (8 papers) and Photonic and Optical Devices (3 papers). W.J. Mosby is often cited by papers focused on Semiconductor Quantum Structures and Devices (9 papers), Semiconductor Lasers and Optical Devices (8 papers) and Photonic and Optical Devices (3 papers). W.J. Mosby collaborates with scholars based in United States. W.J. Mosby's co-authors include F. L. Galeener, J. C. Mikkelsen, R. H. Geils, R. L. Thornton, T. L. Paoli, J. C. Tramontana, D. R. Scifres, F. Endicott, J. E. Epler and Henry Chung and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of Lightwave Technology.

In The Last Decade

W.J. Mosby

13 papers receiving 327 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W.J. Mosby United States 7 259 181 82 81 28 13 349
E. B. Mejía Mexico 10 283 1.1× 98 0.5× 84 1.0× 91 1.1× 67 2.4× 30 343
Hiroshi Yamada‐Kaneta Japan 10 285 1.1× 148 0.8× 17 0.2× 200 2.5× 35 1.3× 53 371
S. P. Depinna United Kingdom 13 339 1.3× 144 0.8× 104 1.3× 342 4.2× 22 0.8× 23 449
E. Moser Italy 14 225 0.9× 152 0.8× 182 2.2× 344 4.2× 111 4.0× 20 434
J. Shmulovich United States 13 466 1.8× 295 1.6× 158 1.9× 217 2.7× 25 0.9× 37 607
A. A. Pavlyuk Russia 15 418 1.6× 313 1.7× 139 1.7× 281 3.5× 11 0.4× 49 520
Robert Stegeman United States 9 224 0.9× 143 0.8× 259 3.2× 237 2.9× 62 2.2× 18 442
S. V. Kurilchik Belarus 10 395 1.5× 289 1.6× 120 1.5× 188 2.3× 10 0.4× 33 449
G. Fonteneau France 11 124 0.5× 31 0.2× 210 2.6× 208 2.6× 28 1.0× 42 320
Quentin Coulombier France 16 686 2.6× 299 1.7× 194 2.4× 300 3.7× 66 2.4× 25 815

Countries citing papers authored by W.J. Mosby

Since Specialization
Citations

This map shows the geographic impact of W.J. Mosby's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.J. Mosby with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.J. Mosby more than expected).

Fields of papers citing papers by W.J. Mosby

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.J. Mosby. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.J. Mosby. The network helps show where W.J. Mosby may publish in the future.

Co-authorship network of co-authors of W.J. Mosby

This figure shows the co-authorship network connecting the top 25 collaborators of W.J. Mosby. A scholar is included among the top collaborators of W.J. Mosby based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.J. Mosby. W.J. Mosby is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Thornton, R. L., et al.. (2003). High gain lateral heterojunction bipolar transistors and application to optoelectronic integration. 397–400. 1 indexed citations
2.
Mosby, W.J., et al.. (1994). <title>Characterization testing of monolithic dual-beam visible diode lasers with a 50-um channel separation</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2148. 396–403. 2 indexed citations
3.
Thornton, R. L., et al.. (1991). Surface skimming buried heterostructure laser with applications to optoelectronic integration. Applied Physics Letters. 59(5). 513–515. 4 indexed citations
4.
Thornton, R. L., et al.. (1990). Properties of closely spaced independently addressable lasers fabricated by impurity-induced disordering. Applied Physics Letters. 56(17). 1623–1625. 13 indexed citations
5.
Thornton, R. L., et al.. (1990). Achievement of high gain in a multiple quantum channel lateral heterojunction bipolar transistor. Applied Physics Letters. 56(17). 1670–1672. 1 indexed citations
6.
Thornton, R. L., et al.. (1989). Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow. IEEE Transactions on Electron Devices. 36(10). 2156–2164. 10 indexed citations
7.
Thornton, R. L., et al.. (1989). Achievement of high gain in a planar heterojunction bipolar transistor with lateral current flow. IEEE Transactions on Electron Devices. 36(11). 2600–2600. 1 indexed citations
8.
Thornton, R. L., et al.. (1988). Unified planar process for fabricating heterojunction bipolar transistors and buried-heterostructure lasers utilizing impurity-induced disordering. Applied Physics Letters. 53(26). 2669–2671. 18 indexed citations
9.
Thornton, R. L., W.J. Mosby, & T. L. Paoli. (1988). Monolithic waveguide coupled cavity lasers and modulators fabricated by impurity induced disordering. Journal of Lightwave Technology. 6(6). 786–792. 65 indexed citations
10.
Epler, J. E., R. L. Thornton, W.J. Mosby, & T. L. Paoli. (1988). Low threshold buried-heterostructure quantum well lasers by excimer laser assisted disordering. Applied Physics Letters. 53(16). 1459–1461. 5 indexed citations
11.
Scifres, D. R., R. D. Burnham, Henry Chung, et al.. (1982). Uniformity of quantum well heterostructure GaAlAs lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters. 41(6). 501–504. 9 indexed citations
12.
Mikkelsen, J. C., F. L. Galeener, & W.J. Mosby. (1981). Raman characterization of hydroxyl in fused silica and thermally grown SiO2. Journal of Electronic Materials. 10(4). 631–651. 17 indexed citations
13.
Galeener, F. L., J. C. Mikkelsen, R. H. Geils, & W.J. Mosby. (1978). The relative Raman cross sections of vitreous SiO2, GeO2, B2O3, and P2O5. Applied Physics Letters. 32(1). 34–36. 203 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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