A. Pretorius

439 total citations
20 papers, 380 citations indexed

About

A. Pretorius is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, A. Pretorius has authored 20 papers receiving a total of 380 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 9 papers in Electrical and Electronic Engineering and 7 papers in Materials Chemistry. Recurrent topics in A. Pretorius's work include GaN-based semiconductor devices and materials (15 papers), Semiconductor materials and devices (7 papers) and Semiconductor Quantum Structures and Devices (6 papers). A. Pretorius is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Semiconductor materials and devices (7 papers) and Semiconductor Quantum Structures and Devices (6 papers). A. Pretorius collaborates with scholars based in Germany, Japan and Italy. A. Pretorius's co-authors include Andreas Rosenauer, Marco Schowalter, Katharina Gries, Adrian Avramescu, Stephan Lutgen, Karl Engl, Knut Müller‐Caspary, D. Hommel, Marcus Bäumer and Horst Weller and has published in prestigious journals such as Angewandte Chemie International Edition, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

A. Pretorius

20 papers receiving 374 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Pretorius Germany 8 157 147 112 95 91 20 380
Emi Kano Japan 13 240 1.5× 93 0.6× 197 1.8× 68 0.7× 50 0.5× 32 408
Petra Specht United States 11 199 1.3× 98 0.7× 171 1.5× 92 1.0× 96 1.1× 26 439
Anas Mouti United States 11 207 1.3× 86 0.6× 184 1.6× 80 0.8× 147 1.6× 23 391
I.-H. Hong Taiwan 13 371 2.4× 118 0.8× 248 2.2× 147 1.5× 167 1.8× 26 626
Anthony E. Novembre United States 12 58 0.4× 79 0.5× 352 3.1× 88 0.9× 46 0.5× 86 525
N. Kamakura Japan 13 238 1.5× 150 1.0× 102 0.9× 159 1.7× 123 1.4× 36 431
Romain Bernard France 15 496 3.2× 48 0.3× 170 1.5× 85 0.9× 342 3.8× 32 644
Songtian Li Japan 10 332 2.1× 72 0.5× 141 1.3× 213 2.2× 226 2.5× 36 546
Marcel Winhold Germany 9 154 1.0× 22 0.1× 190 1.7× 15 0.2× 139 1.5× 18 521
B. Völkel Germany 13 241 1.5× 21 0.1× 362 3.2× 41 0.4× 142 1.6× 15 549

Countries citing papers authored by A. Pretorius

Since Specialization
Citations

This map shows the geographic impact of A. Pretorius's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Pretorius with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Pretorius more than expected).

Fields of papers citing papers by A. Pretorius

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Pretorius. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Pretorius. The network helps show where A. Pretorius may publish in the future.

Co-authorship network of co-authors of A. Pretorius

This figure shows the co-authorship network connecting the top 25 collaborators of A. Pretorius. A scholar is included among the top collaborators of A. Pretorius based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Pretorius. A. Pretorius is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Falta, J., S. Gangopadhyay, Nina C. Berner, et al.. (2011). Cleaning and growth morphology of GaN and InGaN surfaces. physica status solidi (b). 248(8). 1800–1809. 15 indexed citations
2.
Flege, Jan Ingo, S. Figge, S. Gangopadhyay, et al.. (2011). Mg and Si dopant incorporation and segregation in GaN. physica status solidi (b). 248(8). 1810–1821. 7 indexed citations
3.
Pretorius, A., Thomas Schmidt, T. Aschenbrenner, et al.. (2011). Microstructural and compositional analyses of GaN‐based nanostructures. physica status solidi (b). 248(8). 1822–1836. 4 indexed citations
4.
Florian, Matthias, F. Jahnke, A. Pretorius, et al.. (2011). Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. physica status solidi (b). 248(8). 1867–1870. 1 indexed citations
5.
Rosenauer, Andreas, Katharina Gries, Marco Schowalter, et al.. (2010). Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy. Journal of Physics Conference Series. 209. 12009–12009. 4 indexed citations
6.
Aschenbrenner, T., C. Kruse, Mihai Anastasescu, et al.. (2010). Optical and structural characterization of AlInN layers for optoelectronic applications. Journal of Applied Physics. 108(6). 55 indexed citations
7.
Rosenauer, Andreas, Katharina Gries, Knut Müller‐Caspary, et al.. (2009). Measurement of specimen thickness and composition in AlxGa1-xN/GaN using high-angle annular dark field images. Ultramicroscopy. 109(9). 1171–1182. 149 indexed citations
8.
Pretorius, A., et al.. (2009). Transmission electron microscopical investigation of AlGaN/GaN distributed Bragg reflectors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 3 indexed citations
9.
Jürgens, Birte, Holger Borchert, Patrick Sonström, et al.. (2008). Colloidally Prepared Nanoparticles for the Synthesis of Structurally Well‐Defined and Highly Active Heterogeneous Catalysts. Angewandte Chemie International Edition. 47(46). 8946–8949. 28 indexed citations
10.
Kadir, Abdul, M. R. Gokhale, Arnab Bhattacharya, A. Pretorius, & Andreas Rosenauer. (2008). MOVPE growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth. 311(1). 95–98. 3 indexed citations
11.
Figge, S., et al.. (2008). Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE. Journal of Crystal Growth. 310(23). 4923–4926. 11 indexed citations
12.
Jürgens, Birte, Holger Borchert, Patrick Sonström, et al.. (2008). Kolloidchemisch präparierte Nanopartikel zur Herstellung wohldefinierter und hochaktiver Heterogenkatalysatoren. Angewandte Chemie. 120(46). 9078–9082. 6 indexed citations
13.
Frömsdorf, Andreas, Vesna Aleksandrovic, Thomas Schmidt, et al.. (2008). Structural and Chemical Effects of Plasma Treatment on Close‐Packed Colloidal Nanoparticle Layers. Advanced Functional Materials. 18(16). 2398–2410. 62 indexed citations
14.
Pretorius, A., Tomohiro Yamaguchi, Christian Kübel, et al.. (2007). Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy. Journal of Crystal Growth. 310(4). 748–756. 7 indexed citations
15.
Pretorius, A., et al.. (2007). Concentration Measurement In Free-Standing InGaN Nano-Islands With Transmission Electron Microscopy. Microscopy and Microanalysis. 13(S03). 312–313. 1 indexed citations
16.
Pretorius, A., Tomohiro Yamaguchi, Christian Kübel, et al.. (2006). TEM analyses of wurtzite InGaN islands grown by MOVPE and MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1679–1682. 8 indexed citations
17.
Pretorius, A., Marco Schowalter, Nina Daneu, et al.. (2006). Structural analysis of pyramidal defects in Mg‐doped GaN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1803–1806. 5 indexed citations
18.
Flege, Jan Ingo, S. Gangopadhyay, A. Pretorius, et al.. (2006). Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X‐ray photoemission spectro‐microscopy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1725–1728. 5 indexed citations
19.
Pretorius, A., S. Gangopadhyay, S. Figge, et al.. (2006). Spectro-microscopy of Si doped GaN films. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 246(1). 79–84. 3 indexed citations
20.
Einfeldt, S., S. Gangopadhyay, A. Pretorius, et al.. (2006). Two to three dimensional transitions of InGaN and the impact of GaN overgrowth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1396–1399. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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