C. Levade

564 total citations
41 papers, 450 citations indexed

About

C. Levade is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. Levade has authored 41 papers receiving a total of 450 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in C. Levade's work include Chalcogenide Semiconductor Thin Films (12 papers), Semiconductor materials and interfaces (10 papers) and Quantum Dots Synthesis And Properties (7 papers). C. Levade is often cited by papers focused on Chalcogenide Semiconductor Thin Films (12 papers), Semiconductor materials and interfaces (10 papers) and Quantum Dots Synthesis And Properties (7 papers). C. Levade collaborates with scholars based in France, Switzerland and Morocco. C. Levade's co-authors include G. Vanderschaeve, Jean-Jacques Couderc, M. Legros, Jean Le Bras, D. Caillard, Joseph L. Graf, Brian J. Skinner, Abdelkader Kara, E. Scheid and C. Roucau and has published in prestigious journals such as Acta Materialia, Materials Science and Engineering A and Applied Surface Science.

In The Last Decade

C. Levade

41 papers receiving 430 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Levade France 13 275 167 123 106 81 41 450
Jean-Jacques Couderc France 11 125 0.5× 162 1.0× 76 0.6× 60 0.6× 71 0.9× 37 347
Ryna B. Marinenko United States 9 97 0.4× 154 0.9× 55 0.4× 35 0.3× 80 1.0× 33 294
A. Hokazono Japan 14 478 1.7× 287 1.7× 94 0.8× 113 1.1× 108 1.3× 49 632
CHARLES A. HEWETT United States 13 258 0.9× 258 1.5× 115 0.9× 136 1.3× 55 0.7× 37 418
A. Yu. Belov Germany 12 111 0.4× 301 1.8× 174 1.4× 68 0.6× 89 1.1× 42 447
Rogerio T. Ramos United Kingdom 12 392 1.4× 99 0.6× 139 1.1× 255 2.4× 129 1.6× 22 603
V. I. Shevchenko Ukraine 16 90 0.3× 374 2.2× 247 2.0× 28 0.3× 42 0.5× 79 646
Ludwig Grabner United States 7 122 0.4× 198 1.2× 89 0.7× 53 0.5× 44 0.5× 12 374
Christopher J. H. Wort United Kingdom 15 136 0.5× 455 2.7× 214 1.7× 111 1.0× 95 1.2× 30 518
Victor Lee United States 9 165 0.6× 165 1.0× 28 0.2× 69 0.7× 212 2.6× 28 369

Countries citing papers authored by C. Levade

Since Specialization
Citations

This map shows the geographic impact of C. Levade's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Levade with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Levade more than expected).

Fields of papers citing papers by C. Levade

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Levade. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Levade. The network helps show where C. Levade may publish in the future.

Co-authorship network of co-authors of C. Levade

This figure shows the co-authorship network connecting the top 25 collaborators of C. Levade. A scholar is included among the top collaborators of C. Levade based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Levade. C. Levade is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Levade, C., et al.. (2014). Universal mechanisms of Al metallization ageing in power MOSFET devices. Microelectronics Reliability. 54(11). 2432–2439. 28 indexed citations
2.
Legros, M., et al.. (2009). Characterization of ageing failures on power MOSFET devices by electron and ion microscopies. Microelectronics Reliability. 49(9-11). 1330–1333. 19 indexed citations
3.
Legros, M., et al.. (2007). Characterization and modelling of ageing failures on power MOSFET devices. Microelectronics Reliability. 47(9-11). 1735–1740. 23 indexed citations
4.
Roucau, C., et al.. (2002). Crystal polarity of sphalerite semiconductor compounds, as determined by convergent-beam electron diffraction experiments on plan-view (001) samples: Application to ZnSe crystals. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 82(8). 1451–1462. 7 indexed citations
5.
Roucau, C., et al.. (2002). Crystal polarity of sphalerite semiconductor compounds, as determined by convergent-beam electron diffraction experiments on plan-view (001) samples: application to ZnSe crystals. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 82(8). 1451–1462. 4 indexed citations
6.
Vanderschaeve, G., C. Levade, & D. Caillard. (2001). Dislocation mobility and electronic effects in semiconductor compounds. Journal of Microscopy. 203(1). 72–83. 11 indexed citations
7.
Levade, C., et al.. (2000). Vickers indentation on the {001} faces of GaAs under infrared illumination and in darkness. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 80(1). 83–104. 21 indexed citations
8.
Vanderschaeve, G., C. Levade, & D. Caillard. (2000). Transmission electron microscopyin situinvestigation of dislocation mobility in semiconductors. Journal of Physics Condensed Matter. 12(49). 10093–10103. 8 indexed citations
9.
Levade, C., et al.. (2000). Thermal Fatigue Induced Voiding in LDMOS Transistors Submitted to Multiple Energy Discharges. Proceedings - International Symposium for Testing and Failure Analysis. 30842. 255–262. 1 indexed citations
10.
Levade, C. & G. Vanderschaeve. (1999). Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry. physica status solidi (a). 171(1). 83–88. 29 indexed citations
11.
Levade, C. & G. Vanderschaeve. (1999). Electron-irradiation enhanced dislocation glide in II–VI semiconductors. Journal of Crystal Growth. 197(3). 565–570. 20 indexed citations
12.
Levade, C., et al.. (1998). On the influence of indium addition on the mechanical properties of gallium arsenide at room temperature. The European Physical Journal Applied Physics. 1(2). 141–146. 6 indexed citations
13.
14.
Levade, C., et al.. (1993). TEMin situinvestigation of dislocation mobility in II-VI semiconductor compound ZnS cathodoplastic effect and the Peierls mechanism. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 68(1). 97–112. 12 indexed citations
15.
Levade, C., et al.. (1993). Dynamics of dislocations in II-VI compounds under electronic excitation. A TEM “in situ” study. physica status solidi (a). 138(2). 583–589. 1 indexed citations
16.
Couderc, Jean-Jacques, C. Levade, & Abdelkader Kara. (1990). Effet photoplastique dans ZnS de structure blende entre 300 et 620 K. Revue de Physique Appliquée. 25(11). 1129–1138. 8 indexed citations
17.
Kara, Abdelkader, Jean-Jacques Couderc, C. Levade, & G. Vanderschaeve. (1990). Memory Photoplastic Effects in ZnS Sphalerite. physica status solidi (a). 122(2). 545–554. 3 indexed citations
18.
Levade, C., et al.. (1986). The plastic behaviour of natural sphalerite single crystals between 473 and 873 K. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 54(2). 259–279. 5 indexed citations
19.
Levade, C., et al.. (1981). Observation of lattice defects in orthorhombic iron disulfide (marcasite). Physics and Chemistry of Minerals. 7(6). 253–259. 3 indexed citations
20.
Graf, Joseph L., et al.. (1981). Transmission electron microscopic observation of plastic deformation in experimentally deformed pyrite. Economic Geology. 76(3). 738–742. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Jean-Jacques Couderc Breakdown of academic impact, for papers by Ryna B. Marinenko Breakdown of academic impact, for papers by A. Hokazono Breakdown of academic impact, for papers by CHARLES A. HEWETT Breakdown of academic impact, for papers by A. Yu. Belov Breakdown of academic impact, for papers by Rogerio T. Ramos Breakdown of academic impact, for papers by V. I. Shevchenko Breakdown of academic impact, for papers by Ludwig Grabner Breakdown of academic impact, for papers by Christopher J. H. Wort Breakdown of academic impact, for papers by Victor Lee
Rankless by CCL
2026