R. Beserman

2.0k total citations
114 papers, 1.6k citations indexed

About

R. Beserman is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Beserman has authored 114 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 76 papers in Electrical and Electronic Engineering, 74 papers in Materials Chemistry and 62 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Beserman's work include Semiconductor Quantum Structures and Devices (42 papers), Silicon Nanostructures and Photoluminescence (38 papers) and Thin-Film Transistor Technologies (26 papers). R. Beserman is often cited by papers focused on Semiconductor Quantum Structures and Devices (42 papers), Silicon Nanostructures and Photoluminescence (38 papers) and Thin-Film Transistor Technologies (26 papers). R. Beserman collaborates with scholars based in Israel, France and Germany. R. Beserman's co-authors include M. Bałkanski, Yu.L. Khait, R. Weil, Valentin Magidson, Ibrahim Abdulhalim, M. Jouanne, Ming S. Liu, Steven Prawer, K. P. Jain and D. Schmeltzer and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

R. Beserman

112 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Beserman Israel 22 1.1k 1.0k 652 263 256 114 1.6k
K. Winer United States 17 1.7k 1.6× 1.6k 1.5× 518 0.8× 204 0.8× 212 0.8× 58 2.2k
B. Bech Nielsen Denmark 21 924 0.9× 996 1.0× 497 0.8× 242 0.9× 113 0.4× 69 1.6k
Junji Shirafuji Japan 22 1.3k 1.2× 1.4k 1.3× 701 1.1× 86 0.3× 148 0.6× 175 2.0k
J. B. Renucci France 20 670 0.6× 772 0.8× 746 1.1× 91 0.3× 254 1.0× 32 1.3k
A. Axmann Germany 15 812 0.8× 932 0.9× 583 0.9× 93 0.4× 249 1.0× 35 1.3k
B. Pajot France 23 563 0.5× 1.0k 1.0× 767 1.2× 159 0.6× 77 0.3× 93 1.4k
K. Weiser United States 21 1.2k 1.1× 1.5k 1.5× 615 0.9× 140 0.5× 126 0.5× 73 2.0k
Samuel A. Alterovitz United States 22 690 0.6× 848 0.8× 501 0.8× 126 0.5× 263 1.0× 156 1.8k
L. Palmetshofer Austria 20 842 0.8× 913 0.9× 467 0.7× 273 1.0× 203 0.8× 111 1.5k
R. Weil Israel 19 662 0.6× 776 0.8× 482 0.7× 73 0.3× 150 0.6× 87 1.2k

Countries citing papers authored by R. Beserman

Since Specialization
Citations

This map shows the geographic impact of R. Beserman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Beserman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Beserman more than expected).

Fields of papers citing papers by R. Beserman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Beserman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Beserman. The network helps show where R. Beserman may publish in the future.

Co-authorship network of co-authors of R. Beserman

This figure shows the co-authorship network connecting the top 25 collaborators of R. Beserman. A scholar is included among the top collaborators of R. Beserman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Beserman. R. Beserman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Beserman, R., et al.. (2002). Comparison between the crystallization processes by laser and furnace annealing of pure and doped a-Si:H. Journal of Non-Crystalline Solids. 299-302. 736–740. 3 indexed citations
2.
Levy, Martin R., R. Beserman, Ruti Kapon, et al.. (2001). Energy-level localization in Bragg-confined asymmetric coupled quantum wells studied by electric field modulation spectroscopy. Physical review. B, Condensed matter. 63(7). 5 indexed citations
3.
Edelman, F., R. Weil, R. Beserman, et al.. (2000). Structure of Si:H Films Fabricated by Plasma-Enhanced Cvd using Hydrogen Diluted Plasma. MRS Proceedings. 609. 1 indexed citations
4.
Krapf, Diego, J. Shappir, A. Sa’ar, et al.. (1999). Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1−xGex multiple quantum wells. Applied Physics Letters. 75(15). 2232–2234. 2 indexed citations
5.
Levy, Moshe, et al.. (1999). Characterization of CdTe substrates and MOCVD Cd1−xZnxTe epilayers. Journal of Crystal Growth. 197(3). 626–629. 8 indexed citations
6.
Gridin, Vladimir V., et al.. (1992). Temperature dependent photoluminescence of the Sn-implanted InSe. Journal of Applied Physics. 71(12). 6069–6072. 9 indexed citations
7.
Salzman, J., Yu.L. Khait, & R. Beserman. (1989). Material evolution and gradual degradation in semiconductor lasers and light emitting diodes. Electronics Letters. 25(3). 244–246. 11 indexed citations
8.
Khait, Yu.L., Igal Brener, & R. Beserman. (1988). Diffusion of impurities in amorphous silicon. Physical review. B, Condensed matter. 38(9). 6107–6112. 20 indexed citations
9.
Abdulhalim, Ibrahim, R. Beserman, Yu.L. Khait, & R. Weil. (1987). Laser-induced structural instabilities in amorphous materials. Applied Physics Letters. 51(23). 1898–1900. 16 indexed citations
10.
Abdulhalim, Ibrahim, R. Beserman, & Yu.L. Khait. (1987). Light induced structural changes in amorphous semiconductors. Journal of Non-Crystalline Solids. 97-98. 387–390. 5 indexed citations
11.
Schmeltzer, D. & R. Beserman. (1982). Phonon anomalies in zinc selenide. Journal of Physics C Solid State Physics. 15(20). 4259–4263. 1 indexed citations
12.
Beserman, R., et al.. (1982). Heavy ion implantation in diamond. Journal of Applied Physics. 53(3). 1467–1469. 30 indexed citations
13.
Braunstein, G., et al.. (1980). Radiation damage and annealing in Sb implanted diamond. Radiation Effects. 48(1-4). 139–143. 50 indexed citations
14.
Beserman, R., et al.. (1977). Raman scattering measurement of the free-carrier concentration and of the impurity location in boron-implanted silicon. Journal of Applied Physics. 48(4). 1548–1550. 20 indexed citations
15.
Jouanne, M., R. Beserman, I. P. Ipatova, & A. V. Subashiev. (1975). Electron-phonon coupling in highly doped n type silicon. Solid State Communications. 16(8). 1047–1049. 33 indexed citations
16.
Bałkanski, M., K. P. Jain, R. Beserman, & M. Jouanne. (1975). Theory of interference distortion of Raman scattering line shapes in semiconductors. Physical review. B, Solid state. 12(10). 4328–4337. 85 indexed citations
17.
Morhange, J. F., R. Beserman, & M. Bałkanski. (1974). Raman study of the vibrational properties of implanted silicon. physica status solidi (a). 23(2). 383–391. 23 indexed citations
18.
Jouanne, M., R. Beserman, M. Bałkanski, & K. P. Jain. (1974). Line-shapes of localized impurity phonon modes of boron acceptors in silicon. Solid State Communications. 15(2). 255–258. 5 indexed citations
19.
Bourgoin, J. C., J. F. Morhange, & R. Beserman. (1974). On amorphous layer formation in silicon by ion implantation. Radiation Effects. 22(3). 205–208. 30 indexed citations
20.
Beserman, R. & M. Bałkanski. (1970). Optical properties of impurities in blende type II-VI semiconductors compounds. Journal of Physics and Chemistry of Solids. 31(2). 355–361. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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