Immediate Impact

7 standout
Sub-graph 1 of 4

Citing Papers

Wurtzite and fluorite ferroelectric materials for electronic memory
2023 Standout
Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing
2022 Standout
3 intermediate papers

Works of Yen-Huei Chen being referenced

A 16 nm 128 Mb SRAM in High-$\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications
2014

Author Peers

Author Last Decade Papers Cites
Yen-Huei Chen 226 50 20 8 242
Hidehiro Fujiwara 206 55 23 12 225
Sih-Han Li 194 44 16 10 205
Ioannis A. Papistas 122 20 29 13 137
Yung-Ning Tu 162 37 19 5 175
Ameya D. Patil 145 29 19 6 157
Kahng 143 75 11 8 161
Ping-Chun Wu 114 34 14 9 124
Damir A. Jamsek 206 71 17 8 247
Tan‐Li Chou 169 103 17 13 187
Mehdi Saligane 170 52 14 14 189

All Works

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Rankless by CCL
2026