Standout Papers

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor de... 1993 2026 2004 2015 364
  1. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices (1993)
    Daniel M. Fleetwood, P.S. Winokur et al. Journal of Applied Physics

Immediate Impact

3 by Nobel laureates 24 from Science/Nature 72 standout
Sub-graph 1 of 24

Citing Papers

The future of two-dimensional semiconductors beyond Moore’s law
2024 Standout
Developing fatigue-resistant ferroelectrics using interlayer sliding switching
2024 StandoutScience
4 intermediate papers

Works of J.R. Schwank being referenced

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices
1993 Standout
Device modeling of ferroelectric capacitors
1990

Author Peers

Author Last Decade Papers Cites
J.R. Schwank 7002 1145 685 140 7.5k
M.R. Shaneyfelt 7445 764 829 186 7.7k
P.S. Winokur 5963 821 263 106 6.2k
P. V. Dressendorfer 3596 932 132 57 3.9k
Philippe Paillet 4309 470 452 203 4.8k
F. B. McLean 3558 727 135 57 3.8k
P.E. Dodd 5580 322 1353 132 5.8k
K.F. Galloway 3662 363 189 196 4.0k
John D. Cressler 6421 297 260 466 6.7k
T. Sakurai 4803 2056 603 223 5.7k
Simon M. Sze 9730 3197 57 266 11.0k

All Works

Loading papers...

Rankless by CCL
2026