Standout Papers

Implantation and transient B diffusion in Si: The source of the interstitials 1994 2026 2004 2015 392
  1. Implantation and transient B diffusion in Si: The source of the interstitials (1994)
    D. J. Eaglesham, P.A. Stolk et al. Applied Physics Letters

Immediate Impact

22 from Science/Nature 54 standout
Sub-graph 1 of 24

Citing Papers

Recent status, key strategies and challenging perspectives of fast-charging graphite anodes for lithium-ion batteries
2023 Standout
Efficient and stable noble-metal-free catalyst for acidic water oxidation
2022 Standout
2 intermediate papers

Works of H.-J. Gossmann being referenced

B cluster formation and dissolution in Si: A scenario based on atomistic modeling
1999
Boron pileup and clustering in silicon-on-insulator films
1999

Author Peers

Author Last Decade Papers Cites
H.-J. Gossmann 1131 600 364 31 1.2k
A. E. Michel 1120 746 270 39 1.2k
G. F. A. van de Walle 789 685 195 45 1.0k
P. Fahey 1399 908 219 13 1.5k
Aditya Agarwal 1225 378 430 60 1.3k
H. Hieslmair 1540 987 126 58 1.7k
T. E. Seidel 946 307 384 34 1.1k
T. J. Magee 1230 518 391 64 1.4k
A. H. van Ommen 692 739 326 39 1.1k
L. C. Kimerling 1001 535 109 41 1.1k
M. D. Moyer 974 238 100 29 1.1k

All Works

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