Immediate Impact

2 standout

Citing Papers

Time-domain observation of ballistic orbital-angular-momentum currents with giant relaxation length in tungsten
2023 Standout
Stability, Reliability, and Robustness of GaN Power Devices: A Review
2023 Standout
4 intermediate papers

Works of Fangzhou Wang being referenced

Impact of Termination Region on Switching Loss for SiC MOSFET
2019
Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent
2018
and 1 more

Author Peers

Author Last Decade Papers Cites
Fangzhou Wang 233 236 122 39 304
Bhawani Shankar 173 208 63 31 261
Ho‐Kyun Ahn 136 211 75 44 265
Xiang Zheng 157 204 88 37 298
Ajay Tiwari 90 108 140 33 288
Yuji Kasai 199 89 133 40 343
Weijun Luo 278 239 131 46 365
Xiaolong Cai 106 151 66 33 279
Chun Feng 178 164 91 42 287
Aleš Chvála 189 239 57 40 289
P. Murugapandiyan 217 239 109 36 327

All Works

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Rankless by CCL
2026