Standout Papers

Scattering of electrons at threading dislocations in GaN 1998 2026 2007 2016 510
  1. Scattering of electrons at threading dislocations in GaN (1998)
    Nils Weimann, L.F. Eastman et al. Journal of Applied Physics

Immediate Impact

7 by Nobel laureates 24 from Science/Nature 58 standout
Sub-graph 1 of 20

Citing Papers

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Ballistic two-dimensional InSe transistors
2023 StandoutNature
3 intermediate papers

Works of D. Doppalapudi being referenced

The role of dislocation scattering in n-type GaN films
1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
1997
and 1 more

Author Peers

Author Last Decade Papers Cites
D. Doppalapudi 1735 916 421 872 26 2.0k
Yoshihiko Toyoda 1523 902 387 775 15 1.9k
E. J. Tarsa 1774 1213 507 1074 30 2.4k
J. Menniger 1576 1096 412 781 26 2.0k
Jeffrey J. Figiel 1408 722 368 714 48 1.9k
T. D. Moustakas 1610 1100 571 835 72 2.1k
M. Laügt 1725 1299 421 1184 67 2.5k
H. Angerer 1617 829 475 728 33 2.1k
Zachary Bryan 1904 826 381 1134 48 2.1k
O. Semchinova 2115 1140 433 1139 42 2.5k
Isaac Bryan 1648 690 347 947 51 1.9k

All Works

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2026